High-power single-mode antiresonant reflecting optical waveguide-type vertical-cavity surface-emitting lasers

Zhou, Delai; Mawst, Luke J.

doi:10.1109/jqe.2002.805107

Cited by 130 publications

(15 citation statements)

References 23 publications

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“…Several such approaches have been successful, including a simplified version of the ARROW structure (S-ARROW) containing a low-index core surrounded by a single high-index ring. With this structure, substantial mode discrimination has been observed for 980 nm VCSELs with a core diameter of 8-12 µm [20][21][22][23][24][25][26].…”

Section: Introductionmentioning

confidence: 97%

Impact of an Antiresonant Oxide Island on the Lasing of Lateral Modes in VCSELs

2020

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Use of antiresonant structures is a proven, efficient method of improving lateral mode selectivity in VCSELs. In this paper, we analyze the impact of a low-refractive antiresonant oxide island buried in a top VCSEL mirror on the lasing conditions of lateral modes of different orders. By performing comprehensive thermal, electrical, and optical numerical analysis of the VCSEL device, we show the impact of the size and location of the oxide island on the current-crowding effect and compute threshold currents for various lateral modes. If the island is placed close to the cavity, the threshold shows strong oscillations, which for moderate island distances can be tuned to increase the side mode discrimination. We are therefore able to pinpoint the most important factors influencing mode discrimination and to identify oxide island parameters capable of providing single-lateral-mode emission.

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Section: Introductionmentioning

confidence: 97%

Impact of an Antiresonant Oxide Island on the Lasing of Lateral Modes in VCSELs

2020

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“…Hence, it is necessary to additional structuring of VCSELs for their single mode operation with broader current apertures. It can be assured by anti-resonant profile of the refractive index in the distributed Bragg reflectors (DBRs) [7], surface etching [8], surface grating [9] and photonic crystals (PhC) [10]. Since PhC has already verified its ability to select very narrow spectrum of allowed frequencies and discriminate all higher modes [11], it is extremely attractive.…”

Section: Introductionmentioning

confidence: 99%

Threshold Characteristics Enhancement of a Single Mode 1.55 µm InGaAsP Photonic Crystal VCSEL for Optical Communication Systems

Majdabadi¹,

Marjani²,

Sabaghi³

2014

OPJ

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In the present work, we investigate threshold characteristics of a single mode 1.55 µm InGaAsP vertical cavity surface emitting laser (VCSEL) with two different optical confinement structures. The device employs InGaAsP active region, which is sandwiched between GaAs/AlGaAs and GaAs/AlAs distributed Bragg reflectors (DBRs). The optical confinement introduced by the oxide aperture or a single defect photonic crystal design with holes etched throughout the whole structure, is compared with previous work. Photonic crystal VCSEL shows 30.86% and 57.02% lower threshold current than that of the similar oxide confined VCSEL and previous results, respectively. This paper provides key results of the threshold characteristics, including the threshold current and the threshold power. Results suggest that, the 1.55 μm InGaAsP photonic crystal VCSEL seems to be the most optimal one for light sources in high performance optical communication systems.

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“…14,15) Significant efforts have been made to enhance the single-mode power of VCSELs, but it has been hard to increase the single-mode power over 10 mW. [15][16][17][18] As a strong candidate to get high power with good beam quality is a photonic crystal surface emitting lasers, which offers a single-mode power of over 10 W with nearly-diffractionlimited high beam quality. 19,20) On the other hand, a high single-mode power of over 8 W was obtained for VCSEL amplifiers based on a conventional VCSEL structure.…”

mentioning

confidence: 99%

High power surface grating slow-light VCSEL

Hassan

Nakahama

et al. 2021

Appl. Phys. Express

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We report on a novel high power vertical cavity surface emitting laser (VCSEL) with high order shallow surface grating, which enables a single mode operation even for 6 mm long devices. A high single mode power of over 3 W is obtained under pulsed operations for a 6 mm long oxide aperture. A fan-shape beam with sub-degree narrow divergence is obtained up to high injection currents of 5 A. Thanks to the low effective index of slow-light modes in a VCSEL structure, the grating pitch is over 2.5 μm, which can be made by using a standard photo-lithography. The simple fabrication process and potentials of high power and high beam quality could make the proposed laser to be a good candidate for 3D optical sensing and imaging applications.

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High-power single-mode antiresonant reflecting optical waveguide-type vertical-cavity surface-emitting lasers

Cited by 130 publications

References 23 publications

Impact of an Antiresonant Oxide Island on the Lasing of Lateral Modes in VCSELs

Impact of an Antiresonant Oxide Island on the Lasing of Lateral Modes in VCSELs

Threshold Characteristics Enhancement of a Single Mode 1.55 µm InGaAsP Photonic Crystal VCSEL for Optical Communication Systems

High power surface grating slow-light VCSEL

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High-power single-mode antiresonant reflecting optical waveguide-type vertical-cavity surface-emitting lasers

Cited by 130 publications

References 23 publications

Impact of an Antiresonant Oxide Island on the Lasing of Lateral Modes in VCSELs

Impact of an Antiresonant Oxide Island on the Lasing of Lateral Modes in VCSELs

Threshold Characteristics Enhancement of a Single Mode 1.55 &#181;m InGaAsP Photonic Crystal VCSEL for Optical Communication Systems

High power surface grating slow-light VCSEL

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Threshold Characteristics Enhancement of a Single Mode 1.55 µm InGaAsP Photonic Crystal VCSEL for Optical Communication Systems