High-power silicon P–i–N diode with cathode shorts: The impact of electron irradiation

Pina, Libor; Vobecký, J.

doi:10.1016/j.microrel.2013.02.008

Cited by 6 publications

(3 citation statements)

References 6 publications

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“…As a key device for power conversion and control, the LTT is required to withstand a high critical rate of rise of off-state voltage (dv/dt capability) to cope with emergencies such as surge voltage in the circuit [1,2]. The conventional solution is to employ a cathode short structure in the N + cathode so that part of the P base region is directly connected to the cathode metal, thereby the surge current can be quickly released to prevent the device from false triggering of inappropriate dv/dt behavior [3][4][5][6][7]. This solution can be used * Author to whom any correspondence should be addressed.…”

Section: Introductionmentioning

confidence: 99%

Cathode shorts design and its effects on the device characteristics of small-size light-triggered thyristors

Yin

Bai

Liu

et al. 2023

Semicond. Sci. Technol.

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Cathode shorts are an essential part in light-triggered thyristors (LTTs) that are utilized to achieve adequate dv/dt capability and switching characteristics. In this paper, we designed cathode shorts structures specifically for small-size LTTs; the patterns and structural parameters were shown. Devices were fabricated and measured, and the influences of the cathode shorts on device performance were examined. The results showed that, based on the optimized design, the cathode shorts allowed excellent dv/dt capability and switching performance while achieving good optoelectronic properties.

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Section: Introductionmentioning

confidence: 99%

Cathode shorts design and its effects on the device characteristics of small-size light-triggered thyristors

Yin

Bai

Liu

et al. 2023

Semicond. Sci. Technol.

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“…There have been a considerable number of studies concerning the modification of the properties of semiconductor devices that have been irradiated by electronics [11][12][13]. However, the correlation between electron irradiation and permittivity in semiconductor devices has not been investigated.…”

Section: Introductionmentioning

confidence: 99%

Permittivity modulation in Si-based PIN diode by electron irradiation

Wang¹,

Gong²,

Li³

et al. 2022

Semicond. Sci. Technol.

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In this paper, we investigate the influence of defects induced by different doses of electron irradiation on the real part of permittivity of Si-based PIN diodes with a deep-level transient spectrum test. For a more precise result, the relationship between the real part of the permittivity of the sample and the irradiation dose, temperature and annealing is studied. The results show that the real part of the permittivity changes significantly with the irradiation dose and temperature. The absolute value of the real part of the permittivity decreases with the decrease in temperature, and the changing trend decreases after annealing. The deep-level transient spectroscopy results illustrate that different states of defects caused by radiation and annealing have changed the free carrier mobility, free carrier density and charge balance in the material, which means they have a significant impact on the electrical characteristics of the samples. The I–V and C–V curves are obtained through experiments to extract the leakage current and carrier concentration. The I–V characteristic and the permittivity are subjected to temperature-variation analysis.

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“…The conventional anode structure, however, is limited to improve the fast and soft recovery behavior, because of the larger carrier concentration at the anode side than at the cathode side for the uniform carrier lifetime [3,10,11]. In addition, the carrier lifetime technologies, for instance electron or proton irradiation [12,13,14,15,16], were introduced to provide a low plasma density in front of p + emitter to improve the fast and soft recovery behavior. Some new cathode structures including the Field Charge Extraction (FCE) cathode [17,18,19] and the Controlled Injection of Backside Holes (CIBH) structure [20,21] were also proposed to improve the dynamic ruggedness.…”

Section: Introductionmentioning

confidence: 99%

A high voltage diode with partial n<sup>+</sup> adjusting region embedded at the anode side

Zhang

Wang

2019

IEICE Electron. Express

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A novel high voltage diode featuring partial n + adjusting region embedded at the anode side is proposed and analyzed by device simulation in this paper. The low and inverted on-state carrier profile is obtained to realize the fast and soft recovery behavior. The simulations show that the proposed diode achieves a 21% reduction in the reverse peak current density compared with the conventional diode. What's more, such partial n + adjusting region results in the parasitic npn transistor triggered during reverse recovery, and electrons are injected into the pn − junction to inhibit the peak electric field, improving the dynamic ruggedness.

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High-power silicon P–i–N diode with cathode shorts: The impact of electron irradiation

Cited by 6 publications

References 6 publications

Cathode shorts design and its effects on the device characteristics of small-size light-triggered thyristors

Cathode shorts design and its effects on the device characteristics of small-size light-triggered thyristors

Permittivity modulation in Si-based PIN diode by electron irradiation

A high voltage diode with partial n<sup>+</sup> adjusting region embedded at the anode side

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