2014 IEEE 16th Electronics Packaging Technology Conference (EPTC) 2014
DOI: 10.1109/eptc.2014.7028383
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High power SiC inverter module packaging solutions for junction temperature over 220°C

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Cited by 20 publications
(6 citation statements)
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“…Other packaging technologies have been investigated in search of a more compact high temperature operation. Flip chip technologies present a compact wireless configuration [188–191] but reservations exist over its mechanical stability and mechanical stress at high temperatures [143, 192]. FCOC substrates [193] have also been reported to reduce stress between solder joints, devices and substrates.…”
Section: Packaging Of Power Electronics Modulementioning
confidence: 99%
“…Other packaging technologies have been investigated in search of a more compact high temperature operation. Flip chip technologies present a compact wireless configuration [188–191] but reservations exist over its mechanical stability and mechanical stress at high temperatures [143, 192]. FCOC substrates [193] have also been reported to reduce stress between solder joints, devices and substrates.…”
Section: Packaging Of Power Electronics Modulementioning
confidence: 99%
“…Inverters need to withstand a considerable amount of current in EVs, which leads to a substantial amount of heat generation and a harsh operating temperature of above 200 • C [2,3]. Given that Si-based semiconductors become conductive and can fail at such high temperatures, wide-bandgap (WBG) semiconductors are better suited for use in inverter power chips because of their superior properties compared to Si-based semiconductors [4][5][6].…”
Section: Introductionmentioning
confidence: 99%
“…This is the case of the modules presented in [11], [12], [13], [14]. In some other cases, a single ceramic substrate is used, and electrical isolation is provided through one side only [15], although heat can be extracted through both sides of the package.…”
Section: Introductionmentioning
confidence: 99%