Advances in Photodiodes 2011
DOI: 10.5772/14800
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High-Power RF Uni-Traveling-Carrier Photodiodes (UTC-PDs) and Their Applications

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Cited by 26 publications
(6 citation statements)
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“…Additionally, high tunability of the THz carrier frequency (between 20 GHz -3.8 THz [14][15][16]) is easily achievable using photomixing, thus higher carrier frequencies and, hence, higher data rates are readily achievable in optics-based THz systems. Recent advances in the uni-traveling carrier photodiodes (UTC-PD) based THz photomixers give a new hope for commercial applications of photonics-based THz communication systems [17][18][19][20][21][22]. Such devices offer relatively high powers (~1 mW) even at higher THz frequencies (~300 GHz) [23,24].…”
Section: Introductionmentioning
confidence: 99%
“…Additionally, high tunability of the THz carrier frequency (between 20 GHz -3.8 THz [14][15][16]) is easily achievable using photomixing, thus higher carrier frequencies and, hence, higher data rates are readily achievable in optics-based THz systems. Recent advances in the uni-traveling carrier photodiodes (UTC-PD) based THz photomixers give a new hope for commercial applications of photonics-based THz communication systems [17][18][19][20][21][22]. Such devices offer relatively high powers (~1 mW) even at higher THz frequencies (~300 GHz) [23,24].…”
Section: Introductionmentioning
confidence: 99%
“…The bandwidth of the generated noise is determined by the bandwidths of photodiodes and the packaged modules. As photodiodes, we used the uni traveling-carrier photodiodes (UTC-PDs) [8]. The UTC-PD module converts every frequency difference of the ASE noise into THz waves, and finally generates broadband THz noise signals.…”
Section: Photonic Generation Of Teraertz Signalsmentioning
confidence: 99%
“…[1] Recently, the III-V UTC-PDs have been used in wireless communications, spectroscopic measurement systems, and imaging systems. [2] The main structure difference between the UTC photodiode and the conventional PIN photodiode is that the absorption layer and the space-charge region are separated in the InP/InGaAs UTC-PDs, as shown in Fig. 1.…”
Section: Introductionmentioning
confidence: 99%