High-power, near-diffraction-limited large-area traveling-wave semiconductor amplifiers

Goldberg, L.; Mehuys, D.; Surette, Marc R.; Hall, Douglas C.

doi:10.1109/3.234466

Cited by 73 publications

(20 citation statements)

References 32 publications

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“…The field profiles clearly shows a flat pedestal area in the center and a sharp roll off at the edges. A similar pedestal-type near-field profile with many spikes has been reported by several authors, for example as shown in Fig.19 in the work of Goldgerg et al [9 ]. ( ) However, some sharp oscillating fields, originating from higher order modes, are also visible near the center.…”

Section: Resultsmentioning

confidence: 57%

“…The early development of the semiconductor amplifier had initially been assisted by use of the semi-analytical and numerical approaches, including employing the Rigrol model which has been extended [9] to include segmented sections to allow lateral variation of the optical and electronic parameters. However, to study the evolution of the optical beam in an axially non-uniform structure, a beam propagation method (BPM) is an almost essential tool for today's design process.…”

Section: Methodsmentioning

confidence: 99%

“…Although significant progress has been made, one of the most significant issues remaining is beam filamentation which can limit the output power and degrade the beam quality. This beam filamentation effect has been attributed to several mechanisms, including carrier [8] and thermally induced index change [9], amplified spontaneous emission [10], the line-width enhancement (α) factor [11] and defocusing-type nonlinearities [12]. This paper focuses on the evolution of the optical beam along tapered semiconductor laser structures, by using rigorous full vectorial numerical approaches, based on the finite element method.…”

Section: Introductionmentioning

confidence: 99%

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Mode beating in tapered high-power lasers

et al. 2004

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The evolution of the optical beam profile along a high-power tapered semiconductor amplifier has been demonstrated by using a rigorous finite element-based and full-vectorial modal solution, coupled with the beam propagation approach. Numerically simulated results indicate that many higher order modes are generated and propagate along the tapered structure and their interference with the fundamental mode causes variations of the optical beam, both along the transverse and the axial directions, which significantly modify the output beam quality.

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Section: Resultsmentioning

confidence: 57%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Mode beating in tapered high-power lasers

et al. 2004

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“…[3][4][5][6][7] The laser amplifier system consisting of a a laser pulse source and a semiconductor amplifier is a very commonly used configuration since it allows the separate optimization of device properties responsible for pulse properties and output power. The spatial and spectral properties of a pulsed signal that has been amplified in a high-power semiconductor laser thereby strongly depend on both the geometry of the laser ͑in particular the waveguide geometry͒ and the specific realization of the current injection via an electronic contact.…”

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confidence: 99%

Optimization of tapered semiconductor optical amplifiers for picosecond pulse amplification

Gehrig

Hess

2005

Applied Physics Letters

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We present results of a fundamental device simulation study aimed at an optimization of high-power tapered semiconductor optical amplifiers for picosecond pulse amplification. Thereby, the microscopic light-matter coupling is described on the basis of a spatially resolved Maxwell-BlochLangevin description that takes into account many-body-carrier interactions, energy transfer between the carrier and phonon systems and, in particular, the spatiotemporal interplay of stimulated and amplified spontaneous emission and the noise caused by spontaneous emission. Extensive simulation runs reveal the microscopic physical processes which are responsible for the beam quality of the amplified picosecond pulses and allow us to give concrete suggestions for the optimization of the amplifier structure and geometry. We discuss the influence of a curved waveguide or spatially patterned current contact, and identify the length of the unpumped area as the most critical parameter to be carefully optimized. © 2005 American Institute of Physics. ͓DOI: 10.1063/1.2149177͔The need for high output power and good spatial and spectral purity, often required by applications in, e.g., ultrafast nonlinear optics or communication systems, has lead in recent years to device designs for high-power highbrightness semicondcutor laser sources 1,2 and to the realization of new laser amplifiers with improved beam quality. 3-7The laser amplifier system consisting of a a laser pulse source and a semiconductor amplifier is a very commonly used configuration since it allows the separate optimization of device properties responsible for pulse properties and output power. The spatial and spectral properties of a pulsed signal that has been amplified in a high-power semiconductor laser thereby strongly depend on both the geometry of the laser ͑in particular the waveguide geometry͒ and the specific realization of the current injection via an electronic contact. More recent investigations 8 on tapered laser amplifiers have revealed the influence of the tapered angle and the length of the waveguide section on the beam quality and power of the amplified signal. It could be shown that a tapered angle that has been adjusted to the diffraction angle of the injected Gaussian beam and a waveguide length of a few 100 m provide good beam quality and high small signal gain with only small contributions of amplified spontaneous emission ͑ASE͒ in the emitted radiation.While previous studies have mainly addressed the amplification of continuous-wave ͑cw͒ optical signals, in this letter, we focus on an investigation of the design of the waveguide section and the electronic contact of tapered laser amplifiers ͑InGaAs, 2 -3 mm length͒ that should be optimized for picosecond pulse amplification. In particular, we will analyze the influence of these design parameters with respect to the spatiotemporal light field dynamics and quality of the picosecond pulses. Table I summarizes the fundamental material and device parameters used in the modeling. More details on the background ...

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“…This suppresses optical feedback and increases the threshold current for laser oscillation to above the maximum current rating. Using different rectangular geometries for the metallic electrodes and thus the active zone (widths of 400 to 600 µm, lengths of 500 to 2300 µm), a maximum CW output power of 3.3 W had been demonstrated [55]. A rectangular broad-area amplifier (600 µm wide and 1100 µm long) had been used to amplify the 400 mW output of TEM 00 -mode radiation from a Ti:sapphire laser to a near-diffraction-limited CW output beam of up to 3.7 W power [56].…”

Section: Diode Amplifiersmentioning

confidence: 99%

Properties and Frequency Conversion of High-Brightness Diode-Laser Systems

Boller

Beier

Wallenstein

Topics in Applied Physics

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Abstract. An overview of recent developments in the field of high-power, highbrightness diode-lasers, and the optically nonlinear conversion of their output into other wavelength ranges, is given. We describe the generation of continuous-wave (CW) laser beams at power levels of several hundreds of milliwatts to several watts with near-perfect spatial and spectral properties using Master-Oscillator PowerAmplifier (MOPA) systems. With single-or double-stage systems, using amplifiers of tapered or rectangular geometry, up to 2.85 W high-brightness radiation is generated at wavelengths around 810 nm with AlGaAs diodes. Even higher powers, up to 5.2 W of single-frequency and high spatial quality beams at 925 nm, are obtained with InGaAs diodes. We describe the basic properties of the oscillators and amplifiers used. A strict proof-of-quality for the diode radiation is provided by direct and efficient nonlinear optical conversion of the diode MOPA output into other wavelength ranges. We review recent experiments with the highest power levels obtained so far by direct frequency doubling of diode radiation. In these experiments, 100 mW single-frequency ultraviolet light at 403 nm was generated, as well as 1 W of single-frequency blue radiation at 465 nm. Nonlinear conversion of diode radiation into widely tunable infrared radiation has recently yielded record values. We review the efficient generation of widely tunable single-frequency radiation in the infrared with diode-pumped Optical Parametric Oscillators (OPOs). With this system, single-frequency output radiation with powers of more than 0.5 W was generated, widely tunable around wavelengths of 2.1 m and 1.65 m and with excellent spectral and spatial quality. These developments are clear indicators of recent advances in the field of high-brightness diode-MOPA systems, and may emphasize their future central importance for applications within a vast range of optical wavelengths.What has attracted scientists and engineers most about lasers is, certainly, that strongly directed and monochromatic light beams can be generated with high power. Such radiation with high spatial beam quality and narrow spectral bandwidth is commonly termed high-brightness radiation. The general properties of diode lasers, i.e. small size, robustness, potentially low costs, and their high wall-plug efficiency have so far been the central issues in designing diode lasers for applications. Diode lasers with low brightness, though with R. Diehl (Ed.): High-Power Diode Lasers, Topics Appl.

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High-power, near-diffraction-limited large-area traveling-wave semiconductor amplifiers

Cited by 73 publications

References 32 publications

Mode beating in tapered high-power lasers

Mode beating in tapered high-power lasers

Optimization of tapered semiconductor optical amplifiers for picosecond pulse amplification

Properties and Frequency Conversion of High-Brightness Diode-Laser Systems

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