High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm

Davydova, Evgeniya I; Zverkov, M V; Konyaev, V P; Krichevskii, V V; Ладугин, М. А.; Маrmalyuk, А. А.; Падалица, А. А.; Симаков, В. А.; Sukharev, A V; Uspenskii, Mikhail B

doi:10.1070/qe2009v039n08abeh014181

Cited by 10 publications

(1 citation statement)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Several studies have shown that the epitaxial stacking of hetero-structures can provide effective scaling of differential quantum efficiency by the integration of high-efficiency active regions and tunnel junctions [13][14][15][16] . The developed laser stacks have the advantage of enhanced power and brightness.…”

Section: Introductionmentioning

confidence: 99%

High Efficiency 1.9 Kw Single Diode Laser Bar Epitaxially Stacked With a Tunnel Junction

et al. 2021

View full text Add to dashboard Cite

We report on the development of a 940-nm diode laser bar based on epitaxially stacked active regions by employing a tunnel junction structure. The tunnel junction and the device parameters were systematically optimized to achieve high output and power conversion efficiency. A record quasi-continuous wave (QCW) peak power of 1.91 kW at 25 ℃ was demonstrated from a 1-cm wide bar with a 2-mm cavity length at 1 kA drive current (200 μs pulse width and 10 Hz repetition rate). Below the onset of the thermal rollover, the slope efficiency was as high as 2.23 W/A. The maximum power conversion efficiency of 61.1% at 25 ℃ was measured at 300 A. Reducing the heatsink temperature to 15 ℃ led to a marginal increase in the peak power to 1.95 kW.

show abstract

Section: Introductionmentioning

confidence: 99%

High Efficiency 1.9 Kw Single Diode Laser Bar Epitaxially Stacked With a Tunnel Junction

et al. 2021

View full text Add to dashboard Cite

show abstract

1.5 to 1.6 μm pulsed laser diode bars based on epitaxially stacked AlGaInAs/InP heterostructures

Gorlachuk¹,

Ryaboshtan²,

Ладугин³

et al. 2013

Quantum Electron.

View full text Add to dashboard Cite

Double integrated laser-thyristor

et al. 2019

View full text Add to dashboard Cite

Comparative experiments are performed on a semiconductor laser with different numbers (one or two) of emitting sections monolithically integrated with an electronic switch (thyristor). It is shown that the functional integration of a laser with a thyristor in one heterostructure makes it possible to achieve efficient operation of the laser in a pulsed regime (up to 50 W), while the use of vertical integration of two laser sections in this device additionally increases the optical output power to 90 W with all other conditions being the same.

show abstract

High-power laser diodes based on triple integrated InGaAs/AlGaAs/GaAs structures emitting at 0.9 μm

Cited by 10 publications

References 2 publications

High Efficiency 1.9 Kw Single Diode Laser Bar Epitaxially Stacked With a Tunnel Junction

High Efficiency 1.9 Kw Single Diode Laser Bar Epitaxially Stacked With a Tunnel Junction

1.5 to 1.6 μm pulsed laser diode bars based on epitaxially stacked AlGaInAs/InP heterostructures

Double integrated laser-thyristor

Contact Info

Product

Resources

About