High power InGaAs-GaAs-InGaP buried heterostructure strained quantum well lasers grown by two step MOVPE

High-power (>10 W) continuous-wave operation from 100-μm-aperture 0.97-μm-emitting Al-free diode lasers

“…1,2 Furthermore, the low oxidation rate of InGaP permits high-quality epitaxial regrowths over gratings for longitudinal-mode control ͑i.e., distributed-feedback lasers͒ 3,4 or over etched structures for lateral-mode control. [5][6][7][8][9] Thus, the Al-free material system is highly desirable for both broad-stripe spatially incoherent devices as well as for temporally and/or spatially coherent index-guided diode lasers.…”

High-Power, High-Efficiency Monolithic Edge-Emitting GaAs-Based Lasers with Narrow Spectral Widths

“…For example, Dn eff $10 À3 must hold for l 0 ¼1mm, n¼3.3 and W¼3mm. However, there are other possibilities such as diffused or buried waveguides (Lammert et al, 1998;Major and Welch, 1993;Sin and Horikawa, 1993;Yang et al, 1998). (2.8) holds only approximately (despite the use of the effective-index approximation).…”

“…High-power single-lateral-mode DFB and DBR lasers have been realized at 650nm (Pezeshki et al, 1998), between 760 and 800nm (Inoguchi et al, 1994;Morris et al, 1995;Takigawa et al, 1989;Wenzel et al, 2004a), between 850 and 900nm (Klehr et al, 2007b;Major et al, 1994;Price et al, 2006;Vermersch et al, 2008;Wenzel et al, 2002), between 940 and 990nm Fricke et al, 2005;Klehr et al, 2007a;Lammert et al, 1998;Mü ller et al, 2004;Nichols et al, 1993;Paschke et al, 2010;Sin and Horikawa, 1993;Wenzel et al, 2006a,b;Yang et al, 1998), and between 1060 and 1090nm (Achtenhagen et al, 2007;Hofmann et al, 1999Hofmann et al, , 2000aMajor and Welch, 1993;Nguyen et al, 2007). High-power single-lateral-mode DFB and DBR lasers have been realized at 650nm (Pezeshki et al, 1998), between 760 and 800nm (Inoguchi et al, 1994;Morris et al, 1995;Takigawa et al, 1989;Wenzel et al, 2004a), between 850 and 900nm (Klehr et al, 2007b;Major et al, 1994;Price et al, 2006;Vermersch et al, 2008;Wenzel et al, 2002), between 940 and 990nm Fricke et al, 2005;Klehr et al, 2007a;Lammert et al, 1998;Mü ller et al, 2004;…”

Operating Characteristics of GaAs/InGaP Self Aligned Stripe Lasers

“…Previous solutions have included the use of: Al-free epitaxial structures; 3) steam oxidation for current confinement; 4) in-situ etching and regrowth within a metal organic vapour phase epitaxy (MOVPE) reactor; 5) and antiguided 6) or buried ridge 7) structures where Al layers were exposed to oxygen. True buried heterostructures devices utilising InGaP cladding layers have been realised, 8) but this is problematic due to the need to precisely control the InGaP lattice constant and thus removes the ability to decrease the vertical beam divergence. 9) All these have associated difficulties in process control, reliability, and design flexibility.…”