High power, high reliability laser diodes

Scifres, D. R.; Welch, David; Craig, Richard R.; Zucker, Erik; Major, J. S.; Harnagel, G. L.; Sakamoto, Masamichi; Haden, J.M.; Endriz, John G.; Kung, H.

doi:10.1117/12.59136

Cited by 6 publications

(1 citation statement)

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“…Reliability ofthese laser diodes have been studied to a great extent for smaller power devices (1W and 2W). 4 To obtain a statistically meaningful life data, over 10 to 20 laser diodes need to be placed on lifetests for over an extended period oftime (>2000 hours). For high power laser diodes (>5W) which generate tens of waUs of heat, a setup for such an lifetesting requires an extensive cooling capability, large power supplies and power detectors.…”

Section: Introductionmentioning

confidence: 99%

<title>Highly reliable high-power cw AlGaAs (808 nm) 1-cm bar laser diodes for Nd:YAG pump application</title>

Sakamoto

Craig

Endriz

1995

Solid State Lasers and Nonlinear Crystals

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The reliability of high power continuous-wave (CW) 1 cm monolithic A1GaAs (808 nm) laser diodes is extensively investigated. Lasers with two total aperture sizes, 1800 urn and 3000 urn, are life tested at power levels of lOW and 20W, respectively for 1500 hours to 4000 hours at 30 °C heatsink temperature. These lasers exhibit no failures during the lifetests (total device hours of 45,000 hours for the lOW lasers and 42,000 hours for the 2O lasers). We demonstrate a mean time between failures (MTBF) exceeding 50,000 hours and a median life (ML) of 40,000 hours for the lOW laser diode and a MTBF over 48,000 hours and a ML of 13,000 hours for the 20W laser diode.

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Section: Introductionmentioning

confidence: 99%

<title>Highly reliable high-power cw AlGaAs (808 nm) 1-cm bar laser diodes for Nd:YAG pump application</title>

Sakamoto

Craig

Endriz

1995

Solid State Lasers and Nonlinear Crystals

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Reliability and qualification methodology of 60 W QCW linear bar arrays

Stoltz¹,

Burgaud

Murgadella

et al. 1998

Microelectronics Reliability

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High power AlGaAs quantum well laser diodes prepared by molecular beam epitaxy

Hayakawa

Matsumoto

Morishima

et al. 1993

Applied Physics Letters

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Stable and reliable AlGaAs high power single quantum well lasers prepared by molecular beam epitaxy have been realized. We have prepared both 50-μm devices operating in multiple modes and ridge-waveguide single transverse-mode devices. Good reliability has been confirmed under the operating condition of 500 mW at 50 °C for the former type of devices and under the condition of 50 mW at 50 °C for the latter type of devices over 1000 h. These results indicate that molecular beam epitaxy is capable of making reliable high power laser diodes.

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High power, high reliability laser diodes

Abstract: High power laser diodes have been fabricated at wavelengths ranging from 980 nm to 690 nm. Results of both catastrophic damage limits and long term lifetests for a variety of laser structures over this wavelength range are presented.

Cited by 6 publications

References 0 publications

<title>Highly reliable high-power cw AlGaAs (808 nm) 1-cm bar laser diodes for Nd:YAG pump application</title>

<title>Highly reliable high-power cw AlGaAs (808 nm) 1-cm bar laser diodes for Nd:YAG pump application</title>

Reliability and qualification methodology of 60 W QCW linear bar arrays

High power AlGaAs quantum well laser diodes prepared by molecular beam epitaxy

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