High-power high-efficiency stable indium phosphide MISFETs

Messick, L.; Collins, D. A.; Nguyen, R.; Clawson, A. R.; McWilliams, G.E.

doi:10.1109/iedm.1986.191307

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Analytical and Computer-aided Models Of Inp-based Misfets An1

Device Results1

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1988

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Cited by 14 publications

(2 citation statements)

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“…Recently, a high-efficiency InP MISFET has demonstrated 4.5 watts output power with 4dB gain and 46% power-added efficiency at 9.7 GHz by Messick et al [15]. These impressive results clearly confirmed the promising superior performance og InP MISFETs.…”

Section: Analytical and Computer-aided Models Of Inp-based Misfets Ansupporting

confidence: 68%

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Computer Aided Design of Monolithic Microwave and Millimeter Wave Integrated Circuits and Subsystems

Ku¹

1989

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Section: Analytical and Computer-aided Models Of Inp-based Misfets Ansupporting

confidence: 68%

“…Double heterojunction In. 15 Ga. 85 As/GaAs HEMT's with 0.25 p.m gate hae exhibited peak currents of 430 mA/mm, and a g, of 350 mS/mm. A fmax of 75 GHz and f, of 50 GHz were extrapolated from measurements on one device.…”

Section: Device Resultsmentioning

confidence: 99%

Computer Aided Design of Monolithic Microwave and Millimeter Wave Integrated Circuits and Subsystems

Ku¹

1989

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Theoretical analysis of the breakdown voltage in InP MISFETs

Jaeger

Fellon

Kozlowski

et al. 1989

Micro & Optical Tech Letters

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The theoretical avalanche breakdown in InP MISFETs is described using a two‐dimensional numerical model based on the calculation of Poisson's equation and the current equation. The study investigates various structures with a full analysis of the potential shape and the electric field distribution which gives complete explanations of the breakdown behaviour of the device. The characteristics of the transistor are determined as a function of the geometry of the structure, and the effects of the main parameters are given: The gate‐drain distance, the insulator zone width, the channel thickness, the doping concentration of the active layer and the shape of the recess.

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