Conference on Lasers and Electro-Optics 2018
DOI: 10.1364/cleo_si.2018.sf3g.1
|View full text |Cite
|
Sign up to set email alerts
|

High-Power, High-Efficiency Mid-Infrared Quantum Cascade Lasers

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
4
1

Citation Types

1
31
0

Year Published

2018
2018
2022
2022

Publication Types

Select...
4

Relationship

0
4

Authors

Journals

citations
Cited by 4 publications
(32 citation statements)
references
References 0 publications
1
31
0
Order By: Relevance
“…Since its invention in the 1990s, quantum cascade lasers (QCLs) have evolved into a mainstream mid-IR laser technology [26]. In this feature issue, Botez et al demonstrated QCLs emitting at ~5 μm wavelength based on a step-taper active-region with resonanttunneling extraction (STA-RE) concept [27]. The STA-RE design contributes enhanced internal efficiency of QCLs, and its advantage has been recently validated in QCLs emitting at 8-9 μm [28].…”
Section: Mid-ir Laser Materials and Sourcesmentioning
confidence: 99%
“…Since its invention in the 1990s, quantum cascade lasers (QCLs) have evolved into a mainstream mid-IR laser technology [26]. In this feature issue, Botez et al demonstrated QCLs emitting at ~5 μm wavelength based on a step-taper active-region with resonanttunneling extraction (STA-RE) concept [27]. The STA-RE design contributes enhanced internal efficiency of QCLs, and its advantage has been recently validated in QCLs emitting at 8-9 μm [28].…”
Section: Mid-ir Laser Materials and Sourcesmentioning
confidence: 99%
“…1):  exp (-ΔE/kT). By contrast, the step-tapered active-region (STA) QCL [7,8], schematically shown in Fig. 1 (b), consists of stepwise tapering the barrier heights in the AR such that their conduction-band offsets increase in energy from the injection to the exit barriers.…”
Section: Introductionmentioning
confidence: 99%
“…Such 4.6-5.0 m-emitting STA QCLs have demonstrated significant advantages in device design offered by the flexibility to control, via metal-organic chemical vapor deposition (MOCVD) crystal growth, the composition (and strain) of each layer within a QCL structure. Such flexibility in crystal growth can be obtained with gas-source molecular beam epitaxy (GS-MBE) and has been used to design linearly-tapered active-region QCLs [2], so called tapered-active (TA) QCLs [7,8] which, however, inherently have lower ΔE values than STA-type device [7]; thus, higher carrier leakage [6].…”
Section: Introductionmentioning
confidence: 99%
See 2 more Smart Citations