High-power, high-beam quality miniaturized laser module for pumping of solid state lasers at 980 nm

Hildenstein, Philipp; Sahm, Alexander; Feise, D.; Gorjan, Martin; Tacchini, Simone; Paschke, K.; Tränkle, G.

doi:10.1117/12.2543002

Cited by 3 publications

(1 citation statement)

References 3 publications

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“…S EMICONDUCTOR lasers with high output powers are of importance for many applications, such as the pumping of solid-state lasers [1], the material processing [2] and so on. Broad-area (BA) semiconductor lasers can achieve high output powers due to their large area for injecting currents.…”

Section: Introductionmentioning

confidence: 99%

Transverse Photonic Crystal Mode Engineering for Broad-Area Semiconductor Lasers With Narrow-Divergence Angles

Wang

Zhou

et al. 2023

IEEE Photonics J.

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Broad-area semiconductor lasers, coupled with asymmetric transverse photonic crystals (TPCs), are designed by the effective index method and the transfer matrix method. Due to the propagation constant of the fundamental mode lying in the forbidden band of the TPCs, but those of the high-order modes lying in the allowed band of the TPCs, the fundamental mode is mainly concentrated in the active ridge waveguide, while all the high-order modes extend into the lossy TPCs on both sides of the active ridge waveguide. Therefore, the fundamental mode possesses larger optical confinement factor than those of the high-order modes, and reaches the lasing threshold more easily, which is demonstrated by the single-lobe horizontal far-field pattern of the TPC broad-area laser under an injection current of 0.3 A near the threshold. The proposed TPC broad-area laser provides a new strategy of designing broad-area semiconductor lasers with narrow divergence angles.

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Section: Introductionmentioning

confidence: 99%

Transverse Photonic Crystal Mode Engineering for Broad-Area Semiconductor Lasers With Narrow-Divergence Angles

Wang

Zhou

et al. 2023

IEEE Photonics J.

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High-power highly efficient wavelength stabilized pumps operating in 8xx-9xx nm range

Moshegov

Berezin

Trubenko

et al. 2022

High-Power Diode Laser Technology XX

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Improving beam quality of tapered laser diodes by integrated metalens

Gong,

Wang,

Zhou

et al. 2023

J. Opt. Soc. Am. B

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High-power and high-beam-quality laser sources are required in numerous applications. Here, we theoretically investigate a tapered laser diode with integrated metalens, which can improve the lateral beam quality. By carefully designing the slot length and width at different lateral positions behind the front facet, the mode mismatch between the ridged cavity and the tapered cavity is overcome while ensuring high transmittance (>96%). The beam quality is greatly improved, and the lateral far-field divergence is reduced. The simulation results show that the lateral far-field divergence (second-moment level) decreases from 7.2° to 5.9°, and the M2 (second-moment level) decreases from 2.3 to 1.2. The proposed structure shows a good thermal stability in the simulation.

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High-power, high-beam quality miniaturized laser module for pumping of solid state lasers at 980 nm

Cited by 3 publications

References 3 publications

Transverse Photonic Crystal Mode Engineering for Broad-Area Semiconductor Lasers With Narrow-Divergence Angles

Transverse Photonic Crystal Mode Engineering for Broad-Area Semiconductor Lasers With Narrow-Divergence Angles

High-power highly efficient wavelength stabilized pumps operating in 8xx-9xx nm range

Improving beam quality of tapered laser diodes by integrated metalens

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