High-power handling capability of low complexity RF-MEMS switch in Ku-band

Stehle, A.; Siegel, C.; Ziegler, Volker; Schonlinner, B.; Prechtel, U.; Seidel, H.; Schmid, U.

doi:10.1049/el:20072827

Cited by 12 publications

(7 citation statements)

References 2 publications

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“…In comparison with [8], the designed switch has similar bandwidth but better microwave performances. As for [9] and [10], the presented switch has similar microwave performances but a broader bandwidth. The lifetime of the switch has been determined 2.4 × 10 7 cycles.…”

Section: Methodsmentioning

confidence: 77%

“…The power handling capability is also measured at three different frequencies of 10, 25, and 40 GHz, respectively. We take the experimental method of measuring s-parameters under different power levels for verification [9]. If the measured s-parameters have a good stability, it can confirm the proper operation of the proposed switch under these power levels.…”

Section: Methodsmentioning

confidence: 99%

“…For the direct-contact switches, they have the advantages of lower contact resistance and lower actuation voltage than the RF MEMS shunt switches, which offers lower insertion loss. Siegel and co-workers [8,9] reported an MEMS series switch with good power handling capability. The recent advanced directcontact switches proposed by Bansal et al [10] and Paul [11] show good isolation and low pull-in voltage.…”

Section: Introductionmentioning

confidence: 99%

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One to 40 GHz ultra‐wideband RF MEMS direct‐contact switch based on GaAs MMIC technique

Chu

Liao

2018

IET Microwaves, Antennas & Propagation

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This study presents a 1–40 GHz ultra‐wideband radio frequency (RF) micro‐electro‐mechanical systems (MEMS) direct‐contact switch based on a GaAs microwave monolithic integrated circuit (MMIC) process. The proposed switch utilises an inline cantilever membrane and a pull‐in electrode to achieve ‘off’ and ‘on’ states. It has been manufactured by micro‐machining, which is completely compatible with the GaAs MMIC process. An equivalent distributed parameter circuit model of the switch is established to analyse the microwave performances. The measured S‐parameters show that the isolation (S21) in the ‘off’ state is better than 22.5 dB from 1 to 40 GHz. In the ‘on’ state, the input reflection coefficient (S11) is less than −20.9 dB and the forward transmission coefficient (S21) is better than −0.25 dB over the complete band. In addition, the measured pull‐in voltage is ∼17.5 V. The measured maximum power handling capacity is 36.5 dBm. A lifetime of 2.4 × 107 switching cycles is also verified by this design. The whole structure is designed with the purpose of expanding its working bandwidth and achieving higher microwave performances over current state of art.

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Section: Methodsmentioning

confidence: 77%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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One to 40 GHz ultra‐wideband RF MEMS direct‐contact switch based on GaAs MMIC technique

Chu

Liao

2018

IET Microwaves, Antennas & Propagation

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“…The RF MEMS switches combine the advantages of both mechanical switches (excellent linearity, low insertion loss, and low noise) and electronic switches (light and low cost). However, RF MEMS switches have some disadvantages that researchers are trying to address: RF power handling [1], reliability and long lifetime [2], costly packaging [3], dielectric charging [4], and high actuation voltage.…”

Section: Introductionmentioning

confidence: 99%

Pi-shaped MEMS architecture for lowering actuation voltage of RF switching

Mafinejad

Kouzani

Mafinezhad

et al. 2009

IEICE Electron. Express

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A wide band low actuation capacitive coupling electrostatic RF MEMS switching device is presented in this paper. The device includes a pi-shaped matching architecture containing two switches connected by a high impedance short transmission line. The device can act as a switch for any desired frequency whilst requiring only 12 volts for actuation. By optimizing the length and the characteristic impedance of the transmission line, the switch can be tailored for desired frequency bands. The switch is calculated and simulated for Ka to V frequency bands demonstrating excellent improvements of RF characteristics.

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“…However, the RF MEMS switches cannot well handle high power. The power switches are capable of coping with up to several tens watts before device failure [4] [5].…”

Section: Introductionmentioning

confidence: 99%

Design and simulation of a low voltage wide band RF MEMS switch

Mafinejad

Kouzani

Mafinezhad

et al. 2009

2009 IEEE International Conference on Systems, Man and Cybernetics

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This paper presents design of an electrostatic wide band shunt capacitive coupling RF MEMS switch with low actuation voltage. The key factors of the RF MEMS switch design are the proper scattering parameters, low actuation voltage, and the cost of the fabrication process. An overview of the recent low actuation voltage RFMEMS switches has been presented. These designs still suffer from the complexity of process, lack of reliability, limitation of frequency band, and process cost. RF characteristics of a shunt RF MEMS switches are specified mostly by coupling capacitor in upstate position of the membrane C u. This capacitor is in trade-off with actuation voltage. In this work, the capacitor is eliminated by using two short high impedance transmission lines, at the input and output of the switch. The simulation results demonstrate an improvement in the RF characteristic of the switch.

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High-power handling capability of low complexity RF-MEMS switch in Ku-band

Cited by 12 publications

References 2 publications

One to 40 GHz ultra‐wideband RF MEMS direct‐contact switch based on GaAs MMIC technique

One to 40 GHz ultra‐wideband RF MEMS direct‐contact switch based on GaAs MMIC technique

Pi-shaped MEMS architecture for lowering actuation voltage of RF switching

Design and simulation of a low voltage wide band RF MEMS switch

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