High power frequency doubled GaInNAs semiconductor disk laser emitting at 615 nm

Härkönen, Antti; Rautiainen, J.; Guina, Mircea; Konttinen, J.; Tuomisto, P.; Orsila, Lasse; Pessa, M.; Okhotnikov, Oleg G.

doi:10.1364/oe.15.003224

Cited by 36 publications

(23 citation statements)

References 7 publications

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“…Spectral QD gain matching with the semiconductor gain-chip resonance was assured for a wide temperature range. Maximum achieved device CW output power of ≈ 0.3 W at 1210 nm was already suitable for frequency up-conversion, as demonstrated by a similar QW-based device [Här07]. An overview of all realized VECSELs is given in Table 6.1, depicting device design and performance characteristics.…”

Section: Discussionmentioning

confidence: 89%

“…The introduction of a semiconductor saturable absorber mirror within the VECSEL cavity can be used for high speed passive mode-locking and the generation of short pulses [Asc05, Rut06, Klo08, Ino06, Lag07]. Very efficient second harmonic generation (SHG), up to 27% from pump power to second harmonic output, can be realized by the introduction of a nonlinear crystal into the VECSEL cavity [Lee06,Här07]. SHG in cavities can become highly efficient as a result of the high optical field intensity within the resonator as compared to the external laser beam, and can attain conversion efficiencies of more than 80% [Ou92,Pas94].…”

Section: High-power Vertical External-cavity Surface-emitting Lasersmentioning

confidence: 99%

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Design and Realization of Novel GaAs Based Laser Concepts

Germann

2012

Springer Theses

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ZusammenfassungHalbleiterlaser stellen die Grundlage für eine zunehmende Vielzahl von Anwendungen dar, die von der Informationsspeicherung und digitalen Kommunikation bis hin zur Materialbearbeitung reichen. Neuartige Konzepte überwinden bisherige Limitierungen und erschließen neue Anwendungsgebiete. Viele dieser Anwendungsgebiete verlangen nach kostengünstigen Bauelementen, die maximale Brillanz und hohe Ausgangsleistungen oder höchste Geschwindigkeiten erreichen.Diese Arbeit stellt dar, wie essentielle Leistungsmerkmale von Halbleiterlasern durch das Design von Nanostrukturen und epitaktischen Wachstumsprozessen maßgeschneidert werden können. Hierbei wird auf alle Schritte der Laserherstellung eingegangen, vom Design über das Wachstum der Nanostrukturen mittels metallorganischer Gasphasenepitaxie (MOVPE), bis hin zur Herstellung und Charakterisierung kompletter Bauelemente. AbstractSemiconductor lasers represent the backbone for an increasing variety of applications ranging from information storage and communication, to material treatment. Novel concepts are pushing the limits and are enabling new application areas. Many of these areas demand low-cost laser devices with high-brilliance and high-power light output or high-speed performance.This thesis demonstrates how key performance characteristics of semiconductor lasers can be tailored using nanostructure design and epitaxial growth. All aspects of laser fabrication are discussed, from design to growth of nanostructures using metal-organic vapor-phase epitaxy (MOVPE), to fabrication and characterization of complete devices. By employing industrial tools, all developed processes are compatible with mass production.Pulsed high power laser operation up to 8 W and a ultra-low lasing threshold of 66 A/cm 2 is achieved with electrically pumped quantum dots (QD)-based edge emitters at 1.25 µm due to an improved understanding of the QD growth process. This novel process enables 1.3 µm edge emitters for telecom applications in the established InGaAs/GaAs system. At the heart of these achievements is the careful investigation and optimization of nearly all layers of the laser device structure. Designs are altered and precisely tuned by employing AlGaAs or InGaP claddings and varied doping schemes in order to develop new waveguides to meet different requirements.High-power vertical external-cavity surface-emitting lasers (VECSELs) promise continuous-wave (CW) lasing with perfect circular beam quality, plus direct access to the cavity. While the concept is ideal for a multitude of applications, conventional quantumwell based systems exhibit problematic temperature sensitivity during operation. Here, for the first time, VECSELs with sub-monolayer structures and QDs as active layers are realized by MOVPE. These optically pumped devices cover a wide spectral range from 950 nm to 1210 nm, and achieve excellent temperature-stable CW lasing due to the use of QDs and CW output powers of up to 1.4 W.In order to overcome the physical limitations of directly modulated vertical-c...

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Section: Discussionmentioning

confidence: 89%

Section: High-power Vertical External-cavity Surface-emitting Lasersmentioning

confidence: 99%

Design and Realization of Novel GaAs Based Laser Concepts

Germann

2012

Springer Theses

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“…This technique has been used to create diamond heatspreader-bonded SDLs with 10-12QWs with emission covering the 1150-1250 nm band under 780-810 nm pump- Figure 21 (online color at: www.lpr-journal.org) 1220 nm GaInNAs SDL performance [68]. ing [68,95,96]. As shown in Fig.…”

Section: Nm-1250 Nm Sdlsmentioning

confidence: 99%

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

Calvez¹,

Hastie

Guina

et al. 2009

Laser & Photonics Reviews

154

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Recent developments in semiconductor disk lasers (SDLs) generating visible or ultraviolet light are reviewed. After an introduction on potential applications, we discuss how the combination of vertical-emitting semiconductor GaAs-based structures and intra-cavity nonlinear conversion techniques can be successfully exploited to uniquely meet demands for continuous-wave radiation in the visible and ultraviolet spectral range. To do so, an overview of the device operating principles and performance is presented highlighting the underlying material considerations, semiconductor structural designs, thermal management techniques and suitable cavity configurations. This summary is completed by a presentation of new developments in the field, with a particular focus on the trends towards miniaturization.Green-pumped direct-red-emitting Semiconductor Disk Laser.

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“…Epitaxial growth of ternary, quaternary, and even quinary semiconductor alloys has been developed, which allows independent control of semiconductor layer bandgap energy while maintaining lattice match to the substrate. Using group III-V semiconductor GaAs substrate material system with its ternary (e.g., InGaP, AlGaAs, InGaAs, GaAsP, GaAsSb), quaternary (e.g., InGaNAs, InAlGaAs), and quinary (e.g., InAlGaAsP) alloys, VECSEL lasers have been demonstrated with emission wavelengths in the 660-1300 nm wavelength range [18,23,68,79,[86][87][88]. InP-based material system using quaternary alloys (e.g., InGaAsP, InGaAlAs) allows VECSEL lasers to access the 1500-1600 nm optical fiber communication wavelength regions [23,80,[89][90][91][92][93].…”

Section: Wavelength Versatility Through Semiconductor Materials and Smentioning

confidence: 99%

VECSEL Semiconductor Lasers: A Path to High‐Power, Quality Beam and UV to IR Wavelength by Design

Kuznetsov¹

2010

Semiconductor Disk Lasers

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Since its invention and demonstration in 1960, several types of laser have been developed, such as solid-state, semiconductor, gas, excimer, and dye lasers [1]. Today, lasers are used in a wide range of important applications, particularly in optical fiber communication, optical digital recording (CD, DVD, and Blu-ray), laser materials processing, biology and medicine, spectroscopy, imaging, entertainment, and many others. A number of properties enable the application of lasers in these diverse areas, each application requiring a particular combination of these properties. Some of the most important laser properties are laser emission wavelength; output optical power; method of laser excitation, whether by optical pumping or electrical current injection; laser power consumption and efficiency; high-speed modulation or short pulse generation ability; wavelength tunability; output beam quality; device size; and so on. Thus, optical fiber communication [2], a major application that enables modern Internet, commonly requires lasers with emission wavelengths in the 1.55 mm lowloss band of glass fibers and with single-transverse mode output beams for coupling into single-mode optical fibers. Typically, a given laser type excels in some of these properties, while exhibiting shortcomings in others. For example, by using different material compositions and structures, the most widely used semiconductor diode laser [3][4][5][6][7][8][9][10][11][12] can cover a wide range of wavelengths from the ultraviolet (UV) to the mid-IR, can be advantageously driven by diode current injection, and is very compact and efficient. However, the good beam quality, that is, single-transverse mode nearcircular beam operation, can be typically achieved in semiconductor lasers only for output powers below 1 W. Much higher power levels are achievable from semiconductor lasers only with large aspect ratio highly multimoded poor quality optical beams. On the other hand, the solid-state lasers [13,14], including fiber lasers [15], can emit hundreds of watts of output power with excellent beam quality, however, their emission wavelengths are restricted to discrete values of electronic transitions in ions, such as the classic 1064 nm wavelength of the Nd:YAG laser, making them Semiconductor Disk Lasers. Physics and Technology. Edited by Oleg G. Okhotnikov

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High power frequency doubled GaInNAs semiconductor disk laser emitting at 615 nm

Cited by 36 publications

References 7 publications

Design and Realization of Novel GaAs Based Laser Concepts

Design and Realization of Novel GaAs Based Laser Concepts

Semiconductor disk lasers for the generation of visible and ultraviolet radiation

VECSEL Semiconductor Lasers: A Path to High‐Power, Quality Beam and UV to IR Wavelength by Design

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