High power distributed feedback and Fabry-Perot Al-free laser diodes at 780nm for rubidium pumping

Cayron, Cyril; Tran, M.; Robert, Yannick; Lecomte, M.; Calligaro, M.; Parillaud, O.; Garcia, Michel; Krakowski, M.

doi:10.1117/12.873295

Cited by 7 publications

(6 citation statements)

References 2 publications

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“…Utilization of GaAsP/GaInP active region offers possibilities to conventional AlGaAs-based designs, for instance they have intrinsic resistance to the movement of dark-line defects, lower facet temperature rises than AlGaAs lasers, and they can have better reliability due to absence of Al in the active region 6 . Al free structure has also enabled two-step epitaxy for grating generation within the structure, as there are no difficulties with the oxidizing Al content 4 . Three different grating periods were implemented within the structure, including λ/4 shift in the middle to support only one spectral peak wavelength.…”

Section: Modulight Solutionmentioning

confidence: 99%

“…The implementation and usability of the latest increases costs, system complexity, size, and fragility, whereas the fabrication of the first two can be included in the wafer processing steps. 3,4 There are different techniques for the grating integration such as overgrown, laterally coupled and deeply etched surface gratings. In laterally coupled gratings the coupling coefficient is greatest at the sides of the ridge waveguide and therefore higher order lateral modes are favored.…”

Section: Introductionmentioning

confidence: 99%

“…If a larger mode-hop free tuning range is required a DFB laser, where the current flows through the grating, is preferred. 4,5 In this manuscript, we present our results of 780 nm region fabricated DFB laser diodes. Required gratings were implemented within the structure, involving an overgrowth step in epitaxial processes.…”

Section: Introductionmentioning

confidence: 99%

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Optimization and fabrication of 780 nm DFB lasers for quantum systems

Ulkuniemi

Kuusela²,

Aho³

et al. 2023

Quantum Computing, Communication, and Simulation III

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Laser diode solutions for quantum systems have highly variable requirements, depending on the technology and purpose of the laser used in the applicationfor instance, quantum control of particles or molecules and excitation of the quantum systems. Requirements of the laser systems used in the mentioned applications are highly demanding, such as single-mode operation, frequency stability over operation lifetime and narrow spectral linewidth. Narrow spectral linewidth can be achieved with distributed Bragg reflector (DBR), distributed feedback (DFB) lasers and external cavities. Wavelength of laser diode and light output power can vary depending on the intended application. For further efficiency, such emitters can be fabricated in arrays, eliminating the need for multiple single-emitter chips. Individually addressability of the emitters further enhances the efficiency. Examples of different applications using laser diodes described earlier are frequency comb generation, single-photon emitters, and timing sources for picosecond pulses.In this work, we present our results in 780 nm region DFB laser diodes. Gratings were implemented within the structure, including overgrowth step. Multiple variants in grating pitch were introduced for structure and design optimization purposes. Future improvements in the device processing, design, and reliability are discussed. 780 nm region laser diodes are used in multiple quantum systems, such as atomic clocks and manipulation of Rb atoms. In addition, it can be used for terahertz wave generation.

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Section: Modulight Solutionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Optimization and fabrication of 780 nm DFB lasers for quantum systems

Ulkuniemi

Kuusela²,

Aho³

et al. 2023

Quantum Computing, Communication, and Simulation III

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“…In order to meet the 894 nm and 852 nm semiconductor laser sources required for the D1 and D2 line pumping of helium atoms, the French III-V laboratory proposed a large cavity structure DFB laser using the secondary epitaxial technique [15,16]. The laser wavelength was 852 nm, the laser power was 110 mW at an operating current of 50 mA, SMSR > 50 dB, and the Lorentz line width was only 200 kHz; these values meet the Cs atomic D2 line pumping requirements.…”

Section: Secondary Epitaxial Dfb Semiconductor Lasermentioning

confidence: 99%

Advances in narrow linewidth diode lasers

Lang

Jia

Chen

et al. 2019

Sci. China Inf. Sci.

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“…Discrete or integrated MOPA (Master Oscillator Power Amplifier) are very promising candidates. In previous works we demonstrated an Al-free active region DFB laser diode emitting at 780nm for the D2 line of the Rubidium [1]. Here we present a new tapered Semiconductor Optical Amplifier (SOA) structure that exhibits more than 600mW output power at a wavelength of 780nm.…”

mentioning

confidence: 97%