High-power conversion efficiency quantum well diode lasers

Waters, R. G.; Wagner, David K.; Hill, Daniel; Tihanyi, P.; Vollmer, B. J.

doi:10.1063/1.98715

Cited by 24 publications

(7 citation statements)

References 2 publications

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“…16,17 The power conversion efficiency p , reaches a maximum value of 40.2% at 0.8 W, maintains values above 35% from 0.25 to 2.4 W cw, and then decreases only to 33% at the maximum power of 3 W. These consistently high p values are the result of high T 0 and T 1 values, very low electrical resistance and high thermal conductivity of the InGaP cladding layers, and the use of a diamond heatsink. We note in particular that the p maximum occurs at 8ϫI th , a value quite close to that calculated using theory 18 ͑i.e., 9.5ϫI th ͒ with the measured R s value. It is also worth noting that the record output power achieved here from uncoated devices is the same as the highest output power previously demonstrated 19 from optimized facet-coated InGaAs/AlGaAs diode lasers with passivated mirror facets.…”

Section: Fig 2 Measured Characteristic Temperature Coefficientssupporting

confidence: 58%

High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: Effect of substrate misorientation

Mawst

Bhattacharya

Nesnidal

et al. 1995

Applied Physics Letters

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3 W cw output power has been obtained from aluminum-free, strained-layer double-quantum well ͑DQW͒ InGaAs/InGaAsP/InGaP uncoated, 100-m-wide stripe diode lasers ͑ϭ0.945 m͒ grown by low-pressure MOCVD on exact ͑100͒ GaAs substrates. The combination of high-band-gap ͑1.62 eV͒ InGaAsP confinement layers and the DQW structure provides relatively weak temperature dependence for both the threshold current I th as well as the external differential quantum efficiency d . Furthermore, the series electrical resistance for 100 mϫ600 m stripe-contact devices is as low as 0.12 ⍀. As a result, the power conversion efficiency reaches a maximum of 40% at 8 ϫI th , and decreases to only 33% at the maximum power ͑i.e., 3 W͒ at 28ϫI th . Low-temperature ͑12 K͒ photoluminescence measurements of InGaAs/InGaAsP quantum-well structures exhibit narrow linewidths ͑Ͻ10 meV͒ for material grown on exact ͑100͒ GaAs substrates, while growths on misoriented substrates exhibit linewidth broadening, as a result of ''step bunching.'' Laser structures grown on misoriented substrates exhibit increased temperature sensitivity of both I th and d , compared with structures grown on exact ͑100͒ substrates. © 1995 American Institute of Physics.Strained-layer quantum-well InGaAs lasers ͑980 nm͒ are needed as high-output-power pump sources for Er-doped fiber and waveguide amplifiers as well as for fluoride-fiberbased frequency upconversion. The use of the aluminum-free InGaAs/InGaAsP/InGaP material system has several advantages over the InGaAs/GaAs/AlGaAs material system for the realization of reliable, high-power diode sources: ͑1͒ the low reactivity of InGaP to oxygen facilitates regrowth for the fabrication of single-mode index-guided structures, 1,2 ͑2͒ higher electrical and thermal conductivity compared with AlGaAs, 3 and ͑3͒ lasers with AlGaAs cladding layers and unpassivated facets show higher facet degradation than similar lasers with InGaP cladding layers, 4 presumably due to the lower surface recombination velocity of InGaP 5 compared with AlGaAs. Al-free lasers also exhibit an order of magnitude lower facet temperature rise compared with devices containing AlGaAs in both the confining and cladding layers. 6 Although high performance has been demonstrated from Al-free laser structures, the characterization of the quantum-well growth for this material system and its influence on device performance have not been established.Achieving high cw output power requires weak temperature dependence of both the threshold current, I th , and differential quantum efficiency, d which in turn are influenced by carrier leakage from the quantum well͑s͒. Al-free lasers with GaAs or low-band-gap InGaAsP confinement layers exhibit strong carrier leakage from the InGaAs quantum well to the ͑optical͒ confinement layers, resulting in a strong temperature dependence of both I th and d . [7][8][9] To circumvent this problem, the use of higher band-gap InGaAsP confinement layers and multiple quantum wells have been used to reduce carrier leakage, and thereby reduce temp...

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Section: Fig 2 Measured Characteristic Temperature Coefficientssupporting

confidence: 58%

High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: Effect of substrate misorientation

Mawst

Bhattacharya

Nesnidal

et al. 1995

Applied Physics Letters

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“…As shown in Fig. 3, the device has a maximum total power conversion efficiency of 65.5% at a driving current of 2.4 A, at which the device produces a front facet output of 2.9 W. The figure also indicates that the device holds a total power conversion efficiency above 58% even with the driving current reaching 5.2 A, or with the front facet output power increasing to 6 W. This represents the highest efficiency ever reported on any diodes operated at an output power higher than 3 W. [2][3][4][5][6][7][8][9][10] In general, the high efficiencies obtained are attributed to high slope efficiency, low threshold current density, reasonably low turn-on voltage, and low series resistance. Nevertheless, further analysis has been performed to understand the effect of internal loss and cavity length on the total efficiencies at high driving currents, or high output powers.…”

Section: High-efficiency Diode Lasers At High Output Powermentioning

confidence: 87%

“…[1][2][3][4] The highest reported conversion efficiency for any diodes, to our best knowledge, was 66%, which was achieved on a 980 nm InGaAs cw laser having a cavity length of 500 m and tested at 10°C. 2 In the 808 nm wavelength region, in which there is much less literature, 3,5 reported values are much lower.…”

Section: High-efficiency Diode Lasers At High Output Powermentioning

confidence: 99%

“…1-4 In these cases, the conversion efficiencies of such devices reached peaks at relatively low currents, or optical outputs, and then decayed with current or optical power. [1][2][3][4]6 In particular, efficiencies reported at any output power higher than 3 W were below 57%. 2-10 As higher output from diode lasers is pursued, higher efficiency at high output power is desired.…”

Section: High-efficiency Diode Lasers At High Output Powermentioning

confidence: 99%

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High-efficiency diode lasers at high output power

Wang¹,

Smith²,

Xie³

et al. 1999

Applied Physics Letters

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Demonstration of a visible laser on silicon using Eu-doped GaN thin films J. Appl. Phys. 98, 056108 (2005); 10.1063/1.2037867 Asymmetric, nonbroadened large optical cavity waveguide structures for high-power long-wavelength semiconductor lasers J. Appl. Phys. 97, 123103 (2005); 10.1063/1.1928309High-differential-quantum-efficiency, long-wavelength vertical-cavity lasers using five-stage bipolar-cascade active regions Appl. Phys. Lett. 86, 211104 (2005); 10.1063/1.1931060 High slope efficiency, "cascaded" midinfrared lasers with type I InAsSb quantum wells

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“…Low resistance contacts are important in the development of high power optical and microwave devices. In the particular case of laser diodes, a low series resistance is critical to the attainment of high-power CW operation (1). Compounding this problem in conventional laser diodes is the requirement for electrical pumping of the active region, where electrical contact is made through narrow stripes to the p-type surface of the grown laser structure.…”

mentioning

confidence: 99%

Low Resistance Ti/Pt/Au Ohmic Contacts to GaAs / Al x Ga1 − x As Heterostructures Using Open‐Tube Zn Diffusion

Bulman¹,

Gwilliam²,

Chambers³

1989

J. Electrochem. Soc.

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Ti/Pt/Au ohmic contacts to p-type GaAs/AI=Gal_xAs heterostructures have been studied as a function of surface dopant concentrations between 6 • 10 TM cm -3 and 8.5 • 10 TM cm -3. The specific contact resistivities as determined from contact resistance measurements employing the transmission line method (TLM) on as-grown molecular beam epitaxially grown structures were at or above 1 • 10 .8 ~-cm 2. Three different conventional TLM metallization patterns were employed in the measurements as well as circular geometry TLM patterns. Open-tube Zn diffusion was employed to increase the surface dopant concentration to 8.5 • 10 TM cm ~ and produced specific contact resistivities as low as 2.5 • 10 .7 ~-cm 2. These values are found to be unchanged after 8000h and remain unaffected by 400~ 2 rain duration anneals.

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High-power conversion efficiency quantum well diode lasers

Cited by 24 publications

References 2 publications

High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: Effect of substrate misorientation

High continuous wave output power InGaAs/InGaAsP/InGaP diode lasers: Effect of substrate misorientation

High-efficiency diode lasers at high output power

Low Resistance Ti/Pt/Au Ohmic Contacts to GaAs / Al x Ga1 − x As Heterostructures Using Open‐Tube Zn Diffusion

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