High-power, continuous-wave, Nd:LuVO₄ microchip lasers

Abstract

Nd:LuVO 4 crystal was used for the most compact and the simplest laser, i.e. the microchip construction. LD (laser diode)-pumped, continuous-wave output property was detected on several Nd:LuVO 4 microchips with different Nd 3+ doping level, crystal length, and transmittance of output surface. With a 0.5 at.%, 1.5 mm, T = 1% crystal, 9.7 W maximum output was achieved, corresponding an optical-optical conversion efficiency of 32.0%. With a 1 at.%, 1.5 mm, T = 1% crystal, 9.1 W maximum output was achieved at a pump power of 20.5 W, which had the highest optical-optical conversion efficiency of 44.4%.

13.2 W cw output generated by a diode‐end‐pumped Nd:GGG laser

“…And the intrinsic loss of Nd:GGG crystal was measured to be 0.86% cm −1 in our experiment. [1][2][3][4][5][6][7]. Gadolinium gallium garnet (GGG), another crystal suitable for Nd doping and first grown by J.…”

10 W continuous-wave Nd:GdVO4 microchip laser

“…[10]. In that work we found that the specification of Nd:LuVO 4 microchips had very obvious infection on the laser output result.…”

Diode-pumped doubly passively Q-switched Nd:LuVO4laser with Cr4+:YAG saturable absorber and GaAs output coupler

“…A new member of Nd-doped vanadate family, Nd:LuVO 4 [8][9][10][11][12], has attracted considerable attentions recently. Actively and passively Q-switched Nd:LuVO 4 lasers [13], mode locking Nd:LuVO 4 lasers [14,15] and optical parameters oscillator by a Q-switched Nd:LuVO 4 lasers [16] :YAG has become the most important saturable absorber due to its high damage threshold and large thermal conductivity.…”