Diode-pumped doubly passively Q-switched Nd:LuVO₄laser with Cr⁴⁺:YAG saturable absorber and GaAs output coupler

Abstract

A diode-pumped doubly passively Q-switched Nd:LuVO4 laser with Cr 4+ :YAG saturable absorber and GaAs output coupler is realized. This laser can generate a shorter and more symmetric pulse profile when compared with pure GaAs. By using two Cr 4+ :YAG saturable absorbers with different small-signal transmissions T0 = 0.71 and T0 = 0.81, the maximum average output power are 1.15 W and 1.31 W at the incident pump power of 11.23 W, corresponding to optical conversion efficiencies of 10.2% and 11.7%. At the same incident pump power, the minimum pulse widths of 4.18 ns and 5.42 ns can be obtained at T 0 = 0.71 and T 0 = 0.81, respectively. The pulse repetition rate and the single-pulse peak power of the laser are also measured.

Diode-pumped doubly passively Q-switched c-cut Nd:GdVO4 1.34μm laser with V3+:YAG and Co:LMA saturable absorbers

“…Double Q-switchers by simultaneously inserting two different saturable absorbers into the laser cavity have been employed to shorten the pulse width and improve the pulse peak power in the passively Q-switched laser operating at 1.06 mm. The experimental results show that the diode-pumped doubly passively Q-switched laser with both GaAs and Cr 4+ :YAG saturable absorbers can generate shorter pulse with higher peak power [13][14][15][16]. As far as we know, the diode-pumped doubly passively Q-switched laser at 1.34 mm has not been reported.…”

Dual-loss-modulated passively Q-switched Tm:LuAG laser with multi-walled carbon nanotube and monolayer graphene

“…By combining two kinds of SAs in the cavity simultaneously, such as Cr 4+ :YAG and GaAs [21], V 3+ :YAG and Co:LMA [22], the doubly passively Q-switched lasers at 1.06 and 1.34 μm were demonstrated. Concerning on the pulsed 2 μm lasers, the dual-loss modulation technique is also expected to improve the laser performance in further lowering the pulse duration and enhancing the pulse peak powers.…”

All solid-state CW Nd:LuVO4-LBO yellow-green laser under direct 888 nm pumping

“…The Nd:LuVO 4 are pumped into the highly absorbing level by diode laser around 809 nm. Successful attempts to lase the Nd:LuVO 4 have been reported [34][35][36][37][38][39][40][41][42][43][44][45][46][47][48][49][50][51][52]. Recently, the Nd:LuVO 4 laser under direct 880 nm diode laser pumping was reported [53][54][55][56][57][58].…”