High power-added efficiency MMIC amplifier for 2.4 GHz wireless communications

Portilla, J.; García, Herminio Martínez; Artal, E.

doi:10.1109/4.736666

Cited by 23 publications

(8 citation statements)

References 10 publications

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“…Alternative technologies with higher breakdown voltage devices or higher substrate resistivity have been used to increase the output power and efficiency of integrated amplifiers. In particular, LDMOS transistors with a breakdown voltage of 20 V [5] and GaAs monolithic microwave integrated circuits (MMICs) with semi-insulating substrate [6]- [8] have been used to integrate power amplifiers. To date, the highest power levels achieved with fully integrated amplifiers in standard silicon are on the order of 100 mW [9], [10].…”

Section: Introductionmentioning

confidence: 99%

Fully integrated CMOS power amplifier design using the distributed active-transformer architecture

Aoki

Kee

Rutledge

et al. 2002

IEEE J. Solid-State Circuits

330

128

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Abstract-A novel on-chip impedance matching and powercombining method, the distributed active transformer is presented. It combines several low-voltage push-pull amplifiers efficiently with their outputs in series to produce a larger output power while maintaining a 50-match. It also uses virtual ac grounds and magnetic couplings extensively to eliminate the need for any offchip component, such as tuned bonding wires or external inductors. Furthermore, it desensitizes the operation of the amplifier to the inductance of bonding wires making the design more reproducible. To demonstrate the feasibility of this concept, a 2.4-GHz 2-W 2-V truly fully integrated power amplifier with 50-input and output matching has been fabricated using 0.35-m CMOS transistors. It achieves a power added efficiency (PAE) of 41% at this power level. It can also produce 450 mW using a 1-V supply. Harmonic suppression is 64 dBc or better. This new topology makes possible a truly fully integrated watt-level gigahertz range low-voltage CMOS power amplifier for the first time.

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Section: Introductionmentioning

confidence: 99%

Fully integrated CMOS power amplifier design using the distributed active-transformer architecture

Aoki

Kee

Rutledge

et al. 2002

IEEE J. Solid-State Circuits

330

128

View full text Add to dashboard Cite

show abstract

“…Other works using CMOS [3], [4] or Si bipolar [5], [6] processes rely on the use of external passive components such as bond wire inductors, off-chip transmission lines, off-chip capacitors, and/or external baluns to achieve watt level output power. Several other works have been reported using alternative process technologies with higher transistor breakdown voltages and/or insulating substrates to achieve watt-level output power, such as GaAs monolithic microwave integrated circuits (MMICs) [7]- [9] or silicon-on-insulator (SOI) LDMOS with 20-V breakdown voltage [10].…”

Section: Introductionmentioning

confidence: 99%

Distributed active transformer-a new power-combining and impedance-transformation technique

Aoki

Kee

Rutledge

et al. 2002

IEEE Trans. Microwave Theory Techn.

395

218

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Abstract-In this paper, we compare the performance of the newly introduced distributed active transformer (DAT) structure to that of conventional on-chip impedance-transformations methods. Their fundamental power-efficiency limitations in the design of high-power fully integrated amplifiers in standard silicon process technologies are analyzed. The DAT is demonstrated to be an efficient impedance-transformation and power-combining method, which combines several low-voltage push-pull amplifiers in series by magnetic coupling. To demonstrate the validity of the new concept, a 2.4-GHz 1.9-W 2-V fully integrated power-amplifier achieving a power-added efficiency of 41% with 50-input and output matching has been fabricated using 0.35-m CMOS transistors.

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“…All these items need to be a low-cost, low operating voltage, and be in a small size [1][2][3]. Most of the research conducted in the past for these requirements has been carried out by developing separate monofunction radio frequency integrated circuits (RFIC) such as power amplifier (PA), a transmit/receive (T/R) switch, and a low noise amplifier (LNA) [4][5][6][7][8][9][10][11].…”

Section: Introductionmentioning

confidence: 99%

“…A start-of-the-art power amplifier design has to meet the system requirements for high gain, high efficiency, and meet the desired output power while the device and process technology of choice plays a crucial role in realizing a working system. GaAs-based devices have been found to be more suitable for high power applications with higher efficiency and better linearity than those of Si devices [2,12]. In addition, the GaAs technology has lower R&D costs than CMOS R&D; this is another factor that lures companies to use the technology in power amplifier design [13].…”

Section: Introductionmentioning

confidence: 99%

2.4 GHz GaAs PHEMT medium power amplifier for wireless LAN applications

Rasmi

Rose

Rahim

et al. 2010

2010 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC)

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This paper describes the design and measurement of a medium power amplifier (MPA) using 0.15µ µ µ µm GaAs PHEMT technology for wireless application. At 2.4 GHz and 3.0 V of V DS , a fabricated MPA exhibits a P1dB of 15.20 dBm, PAE of 12.70% and gain of 9.70 dB. The maximum current, Imax is 84.40mA and the power consumption for this device is 253.20mW. The die size of this amplifier is 1.2mm x 0.7mm.

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High power-added efficiency MMIC amplifier for 2.4 GHz wireless communications

Cited by 23 publications

References 10 publications

Fully integrated CMOS power amplifier design using the distributed active-transformer architecture

Fully integrated CMOS power amplifier design using the distributed active-transformer architecture

Distributed active transformer-a new power-combining and impedance-transformation technique

2.4 GHz GaAs PHEMT medium power amplifier for wireless LAN applications

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