High photosensitivity light-controlled planar ZnO artificial synapse for neuromorphic computing

Xiao, Weiping; Shan, Linbo; Hai-tao, Zhang; Fu, Yujun; Zhao, Yijiao; Yang, Dongliang; Jiao, Chaohui; Sun, Guangzhi; Wang, Qi; He, Deyan

doi:10.1039/d0nr08082a

Cited by 29 publications

(39 citation statements)

References 54 publications

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Section: Introductionmentioning

confidence: 99%

“…Therefore, devising optoelectronic synaptic devices with high PPF index (a measure of PPF performance) are essential to promote the development of artificial vision. Unfortunately, the PPF index of most optoelectronic synaptic devices is still at an inferior level, [22][23][24][25][26][27] for example, Lee et al proposed an organic photonic synapses with the ability to selectively detect ultraviolet rays to simulate the human retina, the device demonstrated the PPF index from 104% to 120%; [28] Huang et al proposed photonic synapses based on DPPDTT/ CsPbBr 3 quantum dots (QDs) for artificial visual system, the maximum PPF index of the device is 170%. [29] These inadequate PPF index will result in the limited practical application of artificial visual perception systems.…”

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confidence: 99%

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Light‐Stimulated Synaptic Transistor with High PPF Feature for Artificial Visual Perception System Application

Han

et al. 2022

Adv Funct Materials

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Optoelectronic synaptic devices, which combine the functions of photosensitivity and information processing, are essential for the development of artificial visual perception systems. Nevertheless, improving the paired pulse facilitation (PPF) index of optoelectronic synaptic devices, which is an urgent problem in the construction of high‐precision artificial visual perception systems, has received less attention so far. Herein, a light‐stimulated synaptic transistor (LSST) device with an ultra‐high PPF index (≈196%) is presented by introducing an ultra‐thin carrier regulator layer hexagonal boron nitride (h‐BN) into a classic graphene‐based hybrid transistor frame (graphene/CsPbBr3 quantum dots). Crucially, analysis of the rate‐limiting effect of h‐BN on photogenerated carriers reveals the mechanism behind the LSST ultra‐high PPF index. Furthermore, a two‐layer artificial neural network connected by LSST devices demonstrate ≈91.5% recognition accuracy of handwritten digits. This work provides an effective method for constructing artificial visual perception systems using a hybrid transistor frame in the future.

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Section: Introductionmentioning

confidence: 99%

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confidence: 99%

Light‐Stimulated Synaptic Transistor with High PPF Feature for Artificial Visual Perception System Application

Han

et al. 2022

Adv Funct Materials

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“…where the characteristic relaxation time of τ 1 and τ 2 are related to the rapid band-to-band recombination and slow defect states recombination of photogenerated electron-hole pairs, respectively. [50] Continuous increase of conductivity under UV exposure and slow decay of photocurrent by removing the UV light are essential for the realization of optical-controlled learning and forgetting processes of synaptic devices. Furthermore, pulsed UV light stimuli as presynaptic spike have also been employed to investigate excitatory behaviors of synapse.…”

Section: Resultsmentioning

confidence: 99%

“…The decay curves can be fitted well with the double‐exponential function:

\begin{matrix} I = I_{1} \exp (- \frac{t}{τ_{1}}) + I_{2} \exp (- \frac{t}{τ_{2}}) \end{matrix}

where the characteristic relaxation time of τ 1 and τ 2 are related to the rapid band‐to‐band recombination and slow defect states recombination of photogenerated electron‐hole pairs, respectively. [ 50 ]…”

Section: Resultsmentioning

confidence: 99%

“…[44][45][46][47][48][49] Importantly, ZnO possesses unique characteristics to simulate synaptic functions. Ultraviolet (UV) irradiation can induce a continuous increase of conductivity due to the desorption of chemisorbed oxygen ions on the surface of ZnO, [50] and photocurrent decays slowly after removing the UV irradiation, corresponding to the learning and forgetting processes of synapse, respectively. Therefore, perovskite-ZnO heterostructure can be a promising candidate for optoelectronic synapses.…”

Section: Introductionmentioning

confidence: 99%

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Bidirectional Photoresponse in Perovskite‐ZnO Heterostructure for Fully Optical‐Controlled Artificial Synapse

Huang

et al. 2022

Advanced Optical Materials

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energy consumption and inherent speed limitations. Inspired by human neural system, communicating through synapses with the features of parallel distributed processing and integrated storage and computation, various neuromorphic devices including memristors and fieldeffect transistors have been employed to simulate synaptic functions to overcome the von Neumann bottleneck. [1][2][3] Synaptic plasticity such as long/short-term potentiation (LTP/STP), long/short-term depression (LTD/STD), and paired pulse facilitation/depression (PPF/PPD), have been mimicked by modulating device conductivity (i.e., synaptic weight). Among these synaptic devices, potentiation and depression are always triggered by electrical stimulation. As known the electronic technology suffers the problem of limited computing speed because of the bandwidth connection density trade-off. [4] Fortunately, optoelectronic synapses with the light stimuli exhibit potential for ultrafast computing with advantages of the low crosstalk, high bandwidth, and low power consumption, also can be applied in optical wireless communication. [5,6] Herein, the optoelectronic synapses are operated with direct light illumination and the output is interpreted from the change of electrical conductance. It is different from the photonic devices that are mentioned in the photonic integrated circuits, in which the light is illuminated through a waveguide and output is denoted by the transmittance/absorbance of light in the waveguide. [7,8] However, most of reported optoelectronic devices only show positive photoresponse corresponding to the potentiation behavior of synapses. The achievement of depression behavior still depends on electrical stimulation due to the unidirectional photoresponse of devices. Therefore, a device with bidirectional photoresponse to emulate both excitatory and inhibitory behaviors for a fully optical-controlled artificial synapse is highly desired.Recently, a few of fully optical-controlled artificial synapses have been reported, such as pyrenyl graphdiyne/graphene/ PbS heterostructure, [5] Bi 2 O 2 Se/graphene hybrid structure, [6] ZnO/PbS hybrid heterostructure, [9] oxygen-deficient/oxygenrich InGaZnO homojunction, and black phosphorus. [10][11][12][13] Both the excitatory and inhibitory synaptic behaviors of Compared with electrical synapses, optoelectronic synapses exhibit great potential for ultrafast computing and wireless communication in neuromorphic hardware with advantages of low crosstalk, high bandwidth, and low power consumption. However, due to the unidirectional photoresponse in most of optoelectronic synapses, the related researches still focus on the electrical stimulation of inhibitory behaviors. Herein, a synaptic device based on perovskite−ZnO heterostructure is prepared with the characteristic of bidirectional photoresponse and can realize both the potentiation and depression by ultraviolet (UV) and green light stimuli, respectively. Consecutive UV and green light stimuli for potentiation and depression reveal the reliability ...

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Boolean Logic Computing Based on Neuromorphic Transistor

Wang

Sun

et al. 2023

Adv Funct Materials

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General‐purpose computers usually use logic gate computing units based on complementary metal oxide semiconductors (CMOS). Due to the separate memory and computing units in Von Neumann architecture, data transmission requires great energy and time consumption. Developing novel neuromorphic devices and comprehensively investigating their logical computing mode are crucial to achieve high‐performance and low‐power neuromorphic computation. Here, a systematic summary of Boolean logic computing based on emerging neuromorphic transistors is presented. This summary encompasses logical operation modes, materials, device structures, and working mechanisms. The input mode of Boolean logic operation is classified into electrical input, optical input, and synergistic optical/electrical input. Besides, additional modulation strategies to construct programmable logic functions by electrical, optical, and thermal signals are also summarized. These strategies hold great significance as they enable dynamic reconfiguration of logic operations and provide neuromorphic devices with decision‐making capabilities. Finally, the application prospects and current challenges to Boolean logic computing based on dendritic integration are discussed from the aspects of device integration, synergistic input/modulation modes, auxiliary peripheral circuit, software/hardware system, etc. It is believed that comprehensive investigations on neuromorphic Boolean logic operations are crucial to push forward the development of future neuromorphic computing toward high efficiency and high integration density.

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High photosensitivity light-controlled planar ZnO artificial synapse for neuromorphic computing

Abstract: In this work, a planar light-controlled artificial synapse having high photosensitivity (Ion/Ioff > 1000) with a high photocurrent and a low dark current is realized based on a ZnO thin film grown by radiofrequency sputtering.

Cited by 29 publications

References 54 publications

Light‐Stimulated Synaptic Transistor with High PPF Feature for Artificial Visual Perception System Application

Light‐Stimulated Synaptic Transistor with High PPF Feature for Artificial Visual Perception System Application

Bidirectional Photoresponse in Perovskite‐ZnO Heterostructure for Fully Optical‐Controlled Artificial Synapse

Boolean Logic Computing Based on Neuromorphic Transistor

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