High-Permittivity Perovskite Thin Films for Dynamic Random-Access Memories

Kingon, A. I.; Streiffer, S. K.; Basceri, C.; Summerfelt, Scott R.

doi:10.1557/s0883769400035910

Cited by 231 publications

(90 citation statements)

References 11 publications

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“…Results of etching were examined by means of Alpha-step 200 TENCOR profiler. Table 1 The set of process parameters chosen for studying the influence of the RF power (processes [1][2][3][4][5] and CF 4 /(CF 4 + Ar) gas-mixing ratio (processes 6-10) on the etch rate of BaTiO 3 thin films. 3 Results and discussion Figure 2 shows the etch rate of BaTiO 3 thin films as a function of CF 4 /(CF 4 + Ar) gas-mixing ratio at fixed value of RF power (150 W).…”

Section: Methodsmentioning

confidence: 99%

“…Since the most of its features can be preserved by a material produced in a form of thin film, BT has been attracting attention as an interesting candidate for usage in electro-optical [1], micro-mechanical [2] or sensor [3] devices, and in particular, as a potential high-k dielectric in dynamic access random memories (DRAM) [4][5][6] or non-volatile memories (NVM) [7]. However, reaching a level of considerable maturity by technology of any electronic material requires not only adequate methods of its synthesis but also capabilities of material processing, among others availability of means of its selective etching.…”

Section: Introductionmentioning

confidence: 99%

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Barium titanate thin films plasma etch rate as a function of the applied RF power and Ar/CF₄ mixture gas mixing ratio

Werbowy

Firek

Chojnowski

et al. 2007

Phys. Status Solidi (c)

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BaTiO 3 (BT) nanocrystalline thin films were plasma etched in the course of several experiments which varied in RF power as well as CF 4 /(CF 4 + Ar) gas-mixing ratio. The maximum etch rate of approximately 30 nm/min was observed for the maximum power (300 W) and pure Ar plasma atmosphere, which indicates that the process is controlled by the physical mechanism of Ar ion bombardment, while the increasing content of chemically active plasma component (CF 4 ) in the gas mixture slows down barium titanate etch rate.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Barium titanate thin films plasma etch rate as a function of the applied RF power and Ar/CF₄ mixture gas mixing ratio

Werbowy

Firek

Chojnowski

et al. 2007

Phys. Status Solidi (c)

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“…Perovskite based relaxor ferroelectric materials have generated considerable interest due to rich diversity of their physical properties (one of these is high dielectric constant, ε′) and possible applications in various technologies like memory storage devices, micro-electro-mechanical system, multilayer ceramic capacitors and opto-electronic devices [1][2][3][4]. In these materials, the cluster states have been shown to be long lived at temperature significantly below that of the average transformation temperature (T m ), as indicated by the dielectric response characteristic.…”

Section: Introductionmentioning

confidence: 99%

Ferroelectric relaxor behaviour in Pb(Fe0.5Ta0.5)O3

2009

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:The relaxor ferroelectric lead iron tantalate, Pb(Fe 0.5 Ta 0.5 )O 3 (PFT) is synthesized by Coulombite precursor method. The X-ray diffraction pattern of the sample at room temperature shows a cubic phase. The field dependence of dielectric response is measured in a frequency range 0.1 kHz -1 MHz and in a temperature range from 173-373 K. The temperature dependence of permittivity (ε ′) shows broad maxima at various frequencies. The frequency dependence of the permittivity maximum temperature (T m ) has been modelled using Vogel-Fulcher relation.

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“…Las composiciones id-neas son aquellas que presentan la transici-n ferro-paraelŽctrica a temperatura ambiente, ya que la anomal'a dielŽctrica lleva asociada valores altos de la permitividad, y desorden en la ocupaci-n de uno de los sitios de la estructura, lo que se traduce en una transici-n difusa y, por tanto, en que los valores de permitividad altos se mantengan en un intervalo de temperaturas apreciable. El material m ‡s investigado es el titanato de bario modificado con estroncio (BST), alrededor de la composici-n Ba 0.7 Sr 0.3 TiO 3 (2). Sin embargo, existen otros candidatos.…”

Section: Introducciînunclassified

Láminas delgadas ferroeléctricas de titanato de plomo modificado con un 20% de lantano

Algueró¹,

Calzada²,

Pardo³

1999

Bol. Soc. Esp. Ceram. Vidr.

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Se han preparado l ‡minas delgadas ferroelŽctricas de titanato de Pb modificado con un 20% de La, Pb 0.7 La 0.2 TiO 3 , por una tŽcni-ca sol-gel basada en la ruta de los dioles. Se ha variado el contenido inicial de PbO, del nominal a un exceso del 20% molar; y la velocidad de calentamiento en el tratamiento tŽrmico de cristalizaci-n a 650 o C, de 10 o C min -1 a m ‡s de 500 o C min -1 , y estudiado su efecto en la microestructura, estructura y composici-n de las l ‡minas. No es posible obtener l ‡minas monof ‡sicas con el tratamiento con 10 o C min -1 , aun compensando la volatilizaci-n de PbO con un exceso inicial del 20% molar. S' lo es con tratamiento r ‡pido manteniendo dicho exceso de PbO. Estas oeltimas l ‡minas presentan una permitividad dielŽctrica a temperatura ambiente de ε=700, y una variaci-n entre ambiente y 100 o C de ∆ε= 75, par ‡metros muy interesantes para memorias DRAMs.Palabras clave: l ‡minas ferroelŽctricas, Pb 0.7 La 0.2 TiO 3 , memorias DRAM Lead titanate ferroelectric thin films modified with 20% lanthanumLanthanum modified lead titanate ferroelectric thin films with a composition Pb 0.7 La 0.2 TiO 3 have been prepared by a diol based sol-gel technique. The effect on the film structure, microstructure and composition of the initial PbO content, from the nominal value to an excess of 20 mole%, and of the heating rate of the thermal treatment of crystallisation at 650 o C, from 10 o C min -1 to more than 500 o C min -1 , has been studied. It is not possible to obtain single phase films with the treatment at 10 o C min -1 , even when PbO volatilisation is compensated with an initial excess of PbO of 20 mole%. It is possible with the treatment at more than 500 o C min -1 and the latter excess of PbO. These films present a relative dielectric permittivity at room temperature of ε= 700, and a variation between room temperature and 100 o C of ∆ε= 75, being both parameters very interesting for DRAMs.Key words: ferroelectric films, Pb 0.7 La 0.2 TiO 3 , DRAMs INTRODUCCIîNEn las memorias din ‡micas de acceso aleatorio (DRAMs) el elemento activo es un condensador, y los dos estados de la memoria se definen como los estados cargado y descargado del condensador. La demanda de memorias de capacidad creciente manteniendo, o incluso reduciendo, las dimensiones, exige el uso de materiales de permitividad dielŽctrica creciente. Los -xidos ferroelŽctricos, con permitividades dos -rdenes de magnitud mayores que los compuestos SiO 2 /Si 3 N 4 actualmente utilizados, son los principales candidatos (1). Las composiciones id-neas son aquellas que presentan la transici-n ferro-paraelŽctrica a temperatura ambiente, ya que la anomal'a dielŽctrica lleva asociada valores altos de la permitividad, y desorden en la ocupaci-n de uno de los sitios de la estructura, lo que se traduce en una transici-n difusa y, por tanto, en que los valores de permitividad altos se mantengan en un intervalo de temperaturas apreciable. El material m ‡s investigado es el titanato de bario modificado con estroncio (BST), alrededor de la com...

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High-Permittivity Perovskite Thin Films for Dynamic Random-Access Memories

Cited by 231 publications

References 11 publications

Barium titanate thin films plasma etch rate as a function of the applied RF power and Ar/CF₄ mixture gas mixing ratio

Barium titanate thin films plasma etch rate as a function of the applied RF power and Ar/CF₄ mixture gas mixing ratio

Ferroelectric relaxor behaviour in Pb(Fe0.5Ta0.5)O3

Láminas delgadas ferroeléctricas de titanato de plomo modificado con un 20% de lantano

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High-Permittivity Perovskite Thin Films for Dynamic Random-Access Memories

Cited by 231 publications

References 11 publications

Barium titanate thin films plasma etch rate as a function of the applied RF power and Ar/CF4 mixture gas mixing ratio

Barium titanate thin films plasma etch rate as a function of the applied RF power and Ar/CF4 mixture gas mixing ratio

Ferroelectric relaxor behaviour in Pb(Fe0.5Ta0.5)O3

Láminas delgadas ferroeléctricas de titanato de plomo modificado con un 20% de lantano

Contact Info

Product

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About

Barium titanate thin films plasma etch rate as a function of the applied RF power and Ar/CF₄ mixture gas mixing ratio

Barium titanate thin films plasma etch rate as a function of the applied RF power and Ar/CF₄ mixture gas mixing ratio