High permittivity material selection for design of optimum Hk VDMOS

Naugarhiya, Alok; Kondekar, P. N.

doi:10.1016/j.spmi.2015.02.045

Cited by 16 publications

(9 citation statements)

References 14 publications

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“…Schematic cross section of the voltage‐sustaining layer of (A) Conventional structure 12 (B) Proposed structure…”

Section: Device Structurementioning

confidence: 99%

“…The issues of charge imbalance and impurity interdiffusion are resolved in high‐k MOSFET 9,12 . High permittivity (high‐k) material is used instead of p‐type layer in the voltage‐sustaining layer.…”

Section: Introductionmentioning

confidence: 99%

“…9,10 The issues of charge imbalance and impurity interdiffusion are resolved in high-k MOSFET. 9,12 High permittivity (high-k) material is used instead of p-type layer in the voltage-sustaining layer. The effect of impurity doping on the electric field reduces due to high-k materials causing reduction in area specific on-resistance.…”

mentioning

confidence: 99%

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Reduction in area‐specific on‐resistance with vertical stepped doped high‐kVDMOS

Parmar

Gupta

2021

Int J Numerical Modelling

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In this article, a novel high-k VDMOS with vertical stepped doping profile is presented. It possesses lower area specific on-resistance (R on A) in comparing to the conventional structure while the blocking capacity remains unaltered. Hence, the trade-off between the breakdown voltage and R on A is optimized as well as area specific on-resistance is reduced from 68% to 27%. The proposed structure shows analogous behavior as conventional structure with improved current driving capability from 42% to 24%. Thus, it exhibits improved device characteristics and possesses enhanced figure of merits than conventional structure.

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“…Schematic cross section of the voltage‐sustaining layer of (A) Conventional structure 12 (B) Proposed structure…”

Section: Device Structurementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Reduction in area‐specific on‐resistance with vertical stepped doped high‐kVDMOS

Parmar

Gupta

2021

Int J Numerical Modelling

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“…[6] It has also been demonstrated that the geometry, thickness, and doping of power MOSFETs have a significant impact on their electrical properties. [7][8][9] By introducing step doping in HK-VDMOS (high K-vertically diffused metal-oxide semiconductor), O. Parmar et al deduced that the specific on resistance and the current capacity of the stepped doped high-K VDMOS is better than that of HK-VDMOS. [10][11][12] We are providing comparison between switching characteristics of HK (high K) device and SHK (stepped doped High K) device in order to understand the impact of step doping on the switching performance of HK-VDMOS.…”

Section: Introductionmentioning

confidence: 99%

Stepped Doped High k VDMOS: Switching Characteristics

Shukla

Parmar

Rajput

et al. 2023

Physica Status Solidi (a)

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This paper presents the switching analysis of vertical stepped doped high k VDMOS. The introduction of vertical step doping in the n pillar of HK VDMOS brings improvement in switching performance. All the analysis of proposed and conventional device is carried out using silvaco ATLAS tool. Significant reduction in the switching delay is noted for different values of k. It is observed to be 40% for k = 20, 28.57% for k = 10, and 31.76% for k = 5. So the proposed step doped high k VDMOS can replace the high k VDMOS when fast switching is desired.

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“…Nevertheless, many articles have reported various techniques for improvement of SJ devices in terms of enhancement of BV, optimization in R on A, reduce charge termination (CT), perfect charge-balance (CB) [2,3,4,5,6,7,8,9]. Further, the separate high-K (HK) dielectric pillar in power devices was introduced to avoid impurity inter-diffusion, reduce R on A and improve BV [10,11]. But, some articles have reported that HK devices suffer from lower switching speed and driving current capability due to high capacitive effect [12,13].…”

Section: Introductionmentioning

confidence: 99%