High-performance visible-near IR photodetectors based on high-quality Sn2+-sensitized PbS films

Liu, Shu Li; Fei, Guang Tao; Shao, Ximing; Gao, Xu

doi:10.1016/j.jallcom.2021.160860

Cited by 16 publications

(7 citation statements)

References 46 publications

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“…This decrease may be attributed to the elevated scattering and recombination rates of hot carriers at higher incident powers [27], thereby reducing the conversion efficiency of photogenerated carriers to photocurrent. This trend is consistent with findings observed in prior experiments conducted by Liu and Hou et al [28,29]. To further investigate the effect of annealing temperature on the photoelectric properties of PbS thin films grown on quartz substrates, the Idark, R, and D* values of PbS films annealed at different temperatures at a low incident power density (P = 0.2 mW mm −2 ) were characterized according to the results shown in Figure 3a,b, and the results are shown in Figure 3c,d.…”

Section: Resultssupporting

confidence: 94%

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High Detectivity of PbS Films Deposited on Quartz Substrates: The Role of Enhanced Photogenerated Carrier Separation

Lv,

Li,

Fan

et al. 2023

Sensors

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PbS films grown on quartz substrates by the chemical bath deposition method were annealed in an O2 atmosphere to investigate the role of oxygen in the sensitization process at different annealing temperatures. The average grain size of the PbS films gradually increased as the annealing temperature increased from 400 °C to 700 °C. At an annealing temperature of 650 °C, the photoresponsivity and detectivity reached 1.67 A W−1 and 1.22 × 1010 cm Hz1/2 W−1, respectively. The role of oxides in the sensitization process was analyzed in combination with X-ray diffraction and scanning electron microscopy results, and a three-dimensional network model of the sensitization mechanism of PbS films was proposed. During the annealing process, O functioned as a p-type impurity, forming p+-type PbS layers with high hole concentrations on the surface and between the PbS grains. As annealing proceeds, the p+-type PbS layers at the grain boundaries interconnect to form a three-dimensional network structure of hole transport channels, while the unoxidized p-type PbS layers act as electron transport channels. Under bias, photogenerated electron–hole pairs were efficiently separated by the formed p+-p charge separation junction, thereby reducing electron–hole recombination and facilitating a higher infrared response.

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Section: Resultssupporting

confidence: 94%

Section: Resultssupporting

confidence: 94%

High Detectivity of PbS Films Deposited on Quartz Substrates: The Role of Enhanced Photogenerated Carrier Separation

Lv,

Li,

Fan

et al. 2023

Sensors

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“…Table 1 provides a summary of the performance characteristics of previously reported PDs of the same type [21,[33][34][35][36][37]. Benefiting from the photoconductive-bolometric coupling effect, the SnS PD in this work exhibits a broadband response far exceeding that of other devices, especially showing high responsivity and detectivity.…”

Section: Resultsmentioning

confidence: 95%

High-performance broadband SnS photodetector based on photoconductive-bolometric coupling effect

Zhang,

Liu,

et al. 2024

2D Mater.

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Due to its large absorption coefficient and high carrier mobility, SnS exhibits strong promise in the area of optoelectronic devices. Nevertheless, the fabrication of large-area, high-quality films for SnS photodetectors (PDs) with superior photoresponse remains a formidable task, seriously limiting its further practical application. In the present study, a superior-performance broadband PD founded on the epitaxial SnS film. Large-area uniform SnS films were grown epitaxially on (100)-oriented KBr using magnetron sputtering technique, further exfoliated and transferred in a wafer size to fabricated two- terminal photodetector devices. Benefitting from high crystallization and unique photoconductive-bolometric coupling effect, the fabricated PDs exhibit a wide range of spectral response from the visible to near-infrared (NIR) wavelength (405 - 1550 nm), which is far beyond the limitation of the energy band gap. Particularly noteworthy is the SnS device we fabricated, which demonstrates an impressive responsivity of 95.5 A/W and a detectivity of 7.8×1011 Jones, outperforming other devices by 1-2 orders of magnitude. In addition, SnS PD shows excellent environmental durability. This work provides a robust approach to develop high-performance broadband SnS PDs, while simultaneously offering deep insight into the light-matter interactions.

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“…By fitting the experimental points with function I ph = A × P θ , we obtained a θ value of 0.84. The θ value between 0.5 and 1 means that the device is under the complex process of electron–hole generation, trapping, and recombination. , …”

Section: Resultsmentioning

confidence: 99%

“…The θ value between 0.5 and 1 means that the device is under the complex process of electron−hole generation, trapping, and recombination. 31,32 Responsivity (R) and detectivity (D*) are two key metrics to quantify the performance of the photodetector. They were calculated by the following equation: 33…”

Section: Resultsmentioning

confidence: 99%

High-Performance Visible to Mid-Infrared Photodetectors Based on HgTe Colloidal Quantum Dots under Room Temperature

Xia,

Gao,

Fei

et al. 2024

ACS Appl. Mater. Interfaces

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HgTe colloidal quantum dots (CQDs) are one of few materials that can realize near-to-midwave infrared photodetection. And the quality of HgTe CQD directly affects the performance of photodetection. In this work, we optimize the method of synthesizing HgTe CQDs to reduce the defect concentration, therefore improving the photoelectric properties. The photodetector based on HeTe CQD can respond to the light from the visible to mid-infrared band. Notably, a photoresponse to 4000 nm light at room temperature is realized. The responsivity and detectivity are 90.6 mA W −1 and 6.9 × 10 7 Jones under 1550 nm light illumination, which are better than these of most reported HgTe CQD photodetectors. The response speed reaches a magnitude of microseconds with a rising time of τ r = 1.9 μs and a falling time of τ f = 1.5 μs at 10 kHz under 1550 nm light illumination.

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High-performance visible-near IR photodetectors based on high-quality Sn2+-sensitized PbS films

Cited by 16 publications

References 46 publications

High Detectivity of PbS Films Deposited on Quartz Substrates: The Role of Enhanced Photogenerated Carrier Separation

High Detectivity of PbS Films Deposited on Quartz Substrates: The Role of Enhanced Photogenerated Carrier Separation

High-performance broadband SnS photodetector based on photoconductive-bolometric coupling effect

High-Performance Visible to Mid-Infrared Photodetectors Based on HgTe Colloidal Quantum Dots under Room Temperature

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