2020
DOI: 10.1016/j.jallcom.2020.155222
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High performance UV photodetector based on MoS2 layers grown by pulsed laser deposition technique

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Cited by 42 publications
(17 citation statements)
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“…The MoS 2 atomic layers were also prepared by different methods. Kumar et al 369 developed large-area MoS 2 layers using pulsed laser deposition (PLD) method which showed photoresponsivity of 3 Â 10 4 A W À1 and detectivity of 1.81 Â 10 14 Jones at 365 nm under 24 mW cm À2 incident light power at applied bias of 2.0 V. The photoresponsivity of the PLD-grown few-layer MoS 2 photodetectors was found to be 3 Â 10 4 , 1.08 Â 10 4 , 7.0 Â 10 3 , and 6.3 Â 10 3 A W À1 at 365, 436, 546, and 655 nm wavelengths under applied bias of 2 V, respectively. FL-MoS 2 photodetectors also showed low dark current of 10 À10 A and photoresponse of 1.37 Â 10 5 .…”
Section: Mos 2 /Inorganic Semiconductor Heterostructuresmentioning
confidence: 99%
“…The MoS 2 atomic layers were also prepared by different methods. Kumar et al 369 developed large-area MoS 2 layers using pulsed laser deposition (PLD) method which showed photoresponsivity of 3 Â 10 4 A W À1 and detectivity of 1.81 Â 10 14 Jones at 365 nm under 24 mW cm À2 incident light power at applied bias of 2.0 V. The photoresponsivity of the PLD-grown few-layer MoS 2 photodetectors was found to be 3 Â 10 4 , 1.08 Â 10 4 , 7.0 Â 10 3 , and 6.3 Â 10 3 A W À1 at 365, 436, 546, and 655 nm wavelengths under applied bias of 2 V, respectively. FL-MoS 2 photodetectors also showed low dark current of 10 À10 A and photoresponse of 1.37 Â 10 5 .…”
Section: Mos 2 /Inorganic Semiconductor Heterostructuresmentioning
confidence: 99%
“…The authors stated that the addition of the MoS 2 coating is beneficial to the FEE process since lower electric fields were required to extract an electron current density of 10 µA/cm 2 (namely, 2.8 V/µm for MoS 2 -coated Si and~5.5 V/µm for MoS 2 -coated W tips). More recently, PLD has been used to fabricate high-quality MoS 2 films (monolayer to few layers) and integrated them into functional ultraviolet (UV) photodetectors [104]. The developed photodetectors were found to exhibit a very low dark current (~10 × 10 −10 A), low operating voltage (2 V), and good response time (32 ms).…”
Section: Pulsed Laser Depositionmentioning
confidence: 99%
“…Seongin Hong, Seungho Baek, Thi Thu Thuy Can, Woon-Seop Choi,* and Sunkook Kim* DOI: 10.1002/aelm.202101063 sensitive photodetectors due to its thickness-dependent bandgap (1.3-1.9 eV), high absorption coefficient, and superior carrier mobility (>100 cm 2 V −1 s −1 ) [9][10][11][12] With these attractive properties, MoS 2 films were obtained by mechanical or chemical exfoliation as well as chemical vapor deposition (CVD) and physical deposition such as radio frequency sputtering and pulsed laser deposition (PLD) for photodetectors. [13][14][15][16][17][18] However, the development of efficient and scalable synthesis method for MoS 2 film is still insufficient for practical applications. The inkjet printing technique is a promising method for the fabrication of MoS 2 films due to its scalability and speed.…”
Section: Fabrication Of Highly Photosensitive Mos 2 Photodetector Fil...mentioning
confidence: 99%