High-Performance Uni-Traveling-Carrier Photodiodes With a New Collector Design

Chtioui, Mourad; Enard, A.; Carpentier, D.; Bernard, Serge; Rousseau, B.; Lelarge, F.; Pommereau, F.; Achouche, M.

doi:10.1109/lpt.2008.924651

Cited by 36 publications

(23 citation statements)

References 8 publications

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“…InP layer followed by a 0.20 µm n-doped (4 × 10 16 cm −3 ) InP layer and a 0.05 µm n-doped step graded bandgap profile spacer layer. This collector design has demonstrated high saturation power and was found to better relax the space charge effects compared to a uniformly doped collector [3]. A similar design is applied to the depleted region of the MUTC-PD.…”

Section: Devices Design and Fabricationmentioning

confidence: 99%

“…These structures were demonstrated to meet simultaneously high-speed, highpower and high linearity requirements since they use mainly electrons as active carriers in a transparent depleted region. Thus, record high saturation currents have been reported for UTC-PDs (120 mA at 20 GHz [3]) and MUTC-PDs (210 mA at 5 GHz [6], and 134 mA at 20 GHz [5] thin p-doped absorption region which limits their responsivity (≤ 0.55 A/W at 1.55 µm, for an absorption layer thickness of 0.6 µm [3]). Such a poor responsivity is a penalty for fiberoptic links performances.…”

Section: Introductionmentioning

confidence: 99%

“…Conventional p-i-n PDs are generally limited by the space charge effect that occurs in the depleted absorption region. Recently, uni-traveling-carrier PDs (UTC-PDs) [2][3][4] and modified UTC PDs (MUTC-PDs) [5][6] have been developed using respectively a totally p-doped and a partially p-doped absorption regions. These structures were demonstrated to meet simultaneously high-speed, highpower and high linearity requirements since they use mainly electrons as active carriers in a transparent depleted region.…”

Section: Introductionmentioning

confidence: 99%

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High Responsivity and High Power UTC and MUTC GaInAs-InP Photodiodes

Chtioui

Lelarge

Enard

et al. 2012

IEEE Photon. Technol. Lett.

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We have developed a high-performance unitraveling-carrier (UTC) and a modified uni-traveling-carrier (MUTC) photodiode (PD). We report a comparison between the two devices comprising both a 1.5-µm-thick absorption layer followed by a 0.5-µm-thick transparent collector layer. Both devices showed simultaneously a high responsivity (larger than 0.92 A/W at 1.55 µm), a high saturation current (larger than 100 mA at 10 GHz), and a high linearity (OIP3 of 35 dBm at 10 GHz). Thanks to a partly depleted absorber, the MUTC-PD is demonstrated to achieve a higher bandwidth (more than 20 GHz at high current), while the UTC-PD is demonstrated to achieve a higher saturation current and a less voltage dependent radiofrequency and linearity characteristics.

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Section: Devices Design and Fabricationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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High Responsivity and High Power UTC and MUTC GaInAs-InP Photodiodes

Chtioui

Lelarge

Enard

et al. 2012

IEEE Photon. Technol. Lett.

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“…And this effect can be reduced by using a technique of charge compensation in the collection layer. As reported in [14], a non-uniformly doped collector was designed to relax the space-charge effect.…”

Section: Introductionmentioning

confidence: 99%

Design of broadband and high-output power uni-traveling-carrier photodiodes

Zhang

2016

Optics Communications

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a b s t r a c tIn this paper, the bandwidth and saturation current of uni-traveling-carrier photodiode (UTC-PD) is investigated by using physics-based modeling. To further improve the performance, novel device structures are proposed. On the one hand, graded bandgap structure is employed in the absorption layer. It is shown that similar to the effect of graded doping method, the electric field in the absorption layer is increased, and thus the bandwidth is improved. Moreover, both the graded doping and graded bandgap structure are optimized. It is found that for the considered UTC-PD, combining use of the optimized graded doping and graded bandgap structure in the absorption layer leads to an improvement of 39.4% in bandwidth. On the other hand, linear doping profile and Gaussian doping profile are proposed to be used in the collection layer. It is shown that the distribution of electric field in the depletion region is improved, which leads to better saturation performance. For the considered UTC-PD, by using the optimized linear doping profile and the Gaussian doping profile, the improvement in saturation current is 18.7% and 25.8%, respectively.

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“…Previous researchers have demonstrated the great progress in device fabrications and applications [3][4][5][6][7] . However, few have been focused on the transient behavior of InP-based UTC-PD [8][9][10] .…”

mentioning

confidence: 99%

Transient simulation and optimization of InP/InGaAs unitraveling carrier photodetector

Liu

Xie

Mao

et al. 2010

Optoelectron. Lett.

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The transient photoresponse of a backside-illuminated InP/InGaAs uni-traveling carrier photodetector (UTC-PD) is simulated by a 2D drift-diffusion approach utilizing a commercial numerical device simulator (ATLAS). The effects of the epitaxial layer structure and device biasing are taken into account. The simulation results indicate that the absorption region has a critical effect on the photoresponse pulse, and an optimized epitaxial layer structure is given to achieve a fast response while maintaining a reasonable response. Here, the optimized material parameters of the absorption region are 180 nm and 5 10 16 cm -3 , respectively.

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High-Performance Uni-Traveling-Carrier Photodiodes With a New Collector Design

Cited by 36 publications

References 8 publications

High Responsivity and High Power UTC and MUTC GaInAs-InP Photodiodes

High Responsivity and High Power UTC and MUTC GaInAs-InP Photodiodes

Design of broadband and high-output power uni-traveling-carrier photodiodes

Transient simulation and optimization of InP/InGaAs unitraveling carrier photodetector

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