High-Performance Ultrathin Body c-SiGe Channel FDSOI pMOSFETs Featuring SiGe Source and Drain: $V_{\rm th}$ Tuning, Variability, Access Resistance, and Mobility Issues

Epitaxial growth of Si and SiGe at temperatures lower than 500°C with disilane and germane

“…Indeed, the hole mobility in such compressively strained layers monotonously increases with the Ge fraction x [2]. Likewise, the introduction of a silicon-germanium layer in the channel of p-type FETs enables the reduction of the threshold voltage and the increase of the ON current in such devices [3]. The use of embedded or raised SiGe:B sources and drains is now mainstream in the microelectronics industry.…”

Work Function Measurement of Silicon Germanium Heterostructures Combining Kelvin Force Microscopy and X-ray Photoelectron Emission Microscopy

“…The hole mobility in p-type metal oxide semiconductor field effect transistors (MOSFETs) is indeed several times higher in a compressively strained silicon germanium channel than a pure silicon one. The threshold voltage is also tunable by the Ge content and strain in such channels, which is another advantage. , In situ boron-doped embedded or raised sources and drains can uniaxially strain the channel of very short gate length pMOSFETs, giving another hole mobility boost. , An improved understanding of the electronic properties of Si 1– x Ge x -based heterostructures is desirable, especially concerning the work function (WF) which plays a crucial role in device technology. Theoretical study of the WF in silicon–germanium heterostructures has already been performed by Sant et al, using empirical methods and an interpolation scheme, giving access to the bulk band structure of Si 1– x Ge x as a function of the Ge content x .…”

“…The threshold voltage is also tunable by the Ge content and strain in such channels, which is another advantage. 1,2 In situ boron-doped embedded or raised sources and drains can uniaxially strain the channel of very short gate length pMOSFETs, giving another hole mobility boost. 2,3 An improved understanding of the electronic properties of Si 1−x Ge x -based heterostructures is desirable, especially concerning the work function (WF) which plays a crucial role in device technology.…”

“…1,2 In situ boron-doped embedded or raised sources and drains can uniaxially strain the channel of very short gate length pMOSFETs, giving another hole mobility boost. 2,3 An improved understanding of the electronic properties of Si 1−x Ge x -based heterostructures is desirable, especially concerning the work function (WF) which plays a crucial role in device technology. Theoretical study of the WF in silicon−germanium heterostructures has already been performed by Sant et al, 4 using empirical methods and an interpolation scheme, giving access to the bulk band structure of Si 1−x Ge x as a function of the Ge content x.…”

Improved drive-current into nanoscaled channels using electrostatic lenses

“…Therefore, considerations are made to optimize these regions, e.g. to reduce the contact and access resistances [2]. We investigate the use of an electrostatic lens in the source region to increase the drive-current through the channel by focusing the electrons into the channel aperture and thereby reducing reflections from the adjacent oxide.…”