High performance ultra-low energy RRAM with good retention and endurance

Cheng, Chien‐Hong; Tsai, Chien-Wei; Chin, Albert; Yeh, F. S.

doi:10.1109/iedm.2010.5703392

Cited by 73 publications

(38 citation statements)

References 10 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…13 Bipolar RS devices are mostly driven by electric field and could have a rather small write current. [14][15][16] In this letter, we introduce a resistive memory element in a metal/doped oxide/metal structure. The device is made of a Pt/STNO ͑Nb-doped SrTiO 3 ͒ interface ͑PS͒ and a STNO/Cu interface ͑SC͒.…”

mentioning

confidence: 99%

Coupled interfaces for misreading avoidance and write current reduction in passive crossbar memory

Yang

et al. 2011

Applied Physics Letters

View full text Add to dashboard Cite

Passive crossbar arrays of oxide-based memory elements hold the promise of high density and speed nonvolatile memory. However, realization of the expected paradigm has been hindered by a so-called misreading problem resulting from sneak paths in passive crossbar arrays. We introduce a resistive memory element consisting of two coupled interfaces in a metal/doped oxide/metal structure. The element avoids the misreading problem by the nonlinearity in current-voltage loops and significantly reduces the write current. The distinct device characteristics may also be applicable in programmable analog circuits and neuromorphic circuits.

show abstract

mentioning

confidence: 99%

Coupled interfaces for misreading avoidance and write current reduction in passive crossbar memory

Yang

et al. 2011

Applied Physics Letters

View full text Add to dashboard Cite

show abstract

“…Fig. 14 plots the variation range of set and reset voltages of some reported RRAM materials in hollow and solid symbols, respectively [38,41,43,44,[45][46][47][48][49][50]. Devices with the same sign for set and reset voltages are unipolar switching and those with opposite signs are bipolar switching devices.…”

Section: Variabilitymentioning

confidence: 99%

“…Variation of set/reset voltages of some RRAM materials reported in literature[38,41,43,44,[45][46][47][48][49][50].…”

mentioning

confidence: 99%

Electrical Characterization of Resistive Switching Memories

Chen

Lin

Seiler³

et al. 2011

AIP Conference Proceedings

View full text Add to dashboard Cite

Resistive switching memory (also known as RRAM for resistive random access memory) is considered a promising candidate for the next-generation nonvolatile memories.This paper summarizes the electrical characterization methodologies for RRAM performance evaluation and the investigation of resistive switching mechanisms. Some unique issues in RRAM measurements are discussed, including polarity, forming, and switching control. Product-oriented RRAM characterization needs to consider yield, failure mechanisms, and reliability issues, which has only began to be addressed by the RRAM research community.

show abstract

“…After that, a lot of materials such as NiO [47,48,49,50] [75,76,77], and GeO [78,79,80] are proposed as other candidates. Most of reports use Pt as an electrode but papers using other metals like Ru, Ni, and IrO 2 are increasing.…”

Section: Reram Using Binary Oxidesmentioning

confidence: 99%

Overview of emerging semiconductor non-volatile memories

Fujisaki

2012

IEICE Electron. Express

View full text Add to dashboard Cite

Abstract:In this article, emerging new semiconductor non-volatile memories are reviewed. We are reaching the integration limit of Flash memories and new types of memories replacing Flash have been actively proposed. Each type of memory is briefly introduced and the possibility of replacing Flash is discussed. FeRAMs, MRAMs, and PCRAMs are already in production and the physics behind the operations and reliabilities are well understood. ReRAMs are now approaching to practical use. However, the operation mechanisms of the other memories have not been understood perfectly. Therefore, it is not fruitful to compare the superiority of each technology at this moment because some innovative idea might enhance a specific technology that happened from time to time.

show abstract

High performance ultra-low energy RRAM with good retention and endurance

Cited by 73 publications

References 10 publications

Coupled interfaces for misreading avoidance and write current reduction in passive crossbar memory

Coupled interfaces for misreading avoidance and write current reduction in passive crossbar memory

Electrical Characterization of Resistive Switching Memories

Overview of emerging semiconductor non-volatile memories

Contact Info

Product

Resources

About