High-Performance Transparent Quantum Dot Light-Emitting Diode with Patchable Transparent Electrodes

Abstract

Patchable electrodes are attractive for applications in optoelectronic devices because of their easy and reliable processability. However, development of reliable patchable transparent electrodes (TEs) with high optoelectronic performance is challenging; till now, optoelectronic devices fabricated with patchable TEs have been exhibiting limited performance. In this study, Ag nanowire (AgNW)/poly­(methyl methacrylate) (PMMA) patchable TEs are developed and the highly efficient transparent quantum dot light-emitting diodes (QLEDs) using the patchable TEs are fabricated. AgNWs with optimized optoelectronic properties (figure of merit ≈ 3.3 × 10–2) are coated by an ultrathin PMMA nanolayer and transferred to thermal release tapes that enable physical attachment of TEs on the QLEDs without a significant damage to the adjacent active layer. The transparent QLEDs using patchable transparent top electrodes display excellent performance, with the maximum total luminance and current efficiency of 27 310 cd·m–2 and 45.99 cd·A–1, respectively. Fabricated by all-solution-based processes, these QLEDs exhibit the best performance to date among devices adopting patchable top electrodes.

Optically Programmable Plateau–Rayleigh Instability for High-Resolution and Scalable Morphology Manipulation of Silver Nanowires for Flexible Optoelectronics

“…The networks with the SCs from 21 to 8.5% have transmittances from 90 to 98% and sheet resistance ranging from 8 to 65 Ω sq –1 (Figures i,j, and S6). The highest FoM estimated by the Haacke equation (FoM = T 10 · R S –1 ) and the bulk model is 0.026 and 300, respectively, , which are comparable to the performance of the previously reported AgNW-based TEs. , …”

“…is 0.026 and 300, respectively, 41,42 which are comparable to the performance of the previously reported AgNW-based TEs. 43,44 Low processing temperature and short fragment length create the possibility of patterning AgNW networks with the PRI self-assembly technique. Selective breakdown of the AgNW network could be easily induced by a UV exposure via shadow mask and temperature annealing.…”

Highly efficient, heat dissipating, stretchable organic light-emitting diodes based on a MoO3/Au/MoO3 electrode with encapsulation

“…Moreover, the MAM thicknesses were optimized using thin-film optic theory and sheet resistance analysis [15][16][17] . MoO 3 (15 nm)/Au(14 nm)/MoO 3 (5 nm) demonstrated a fair balance between high transmittance of 70-80% and low sheet resistance of~20 Ω/sq, the best figure of merit 48,49 value (2.96 × 10 −3 Ω −1 ) (Supplementary Fig. 1).…”

Dynamic Formation of Metal-Based Traps in Photoexcited Colloidal Quantum Dots and Their Relevance for Photoluminescence

“…Colloidal quantum dots (QDs) possess unique characteristics like solution processability and size-dependent optical and electronic properties, which make them of particular interest for application in optoelectronic devices. 1 , 2 QD-based technologies have developed quickly over the past few decades, 3 leading to the incorporation of QDs in solar cells, 4 , 5 displays, 6 − 8 light-emitting diodes (LEDs), 9 − 11 transistors, 12 , 13 and lasers. 14 − 16 For many of these applications, it is of paramount importance that the band gap remains clear of localized energy levels, as these states can lead to unwanted charge carrier trapping.…”