High performance top gate a-IGZO TFT utilizing siloxane hybrid material as a gate insulator

Abstract

We demonstrated gate insulators (GI) fabricated by solution process with the aim of replacing traditional vacuum processed GI. We selected solution siloxane-based material due to its extremely high thermal resistance, excellent transparency, flexibility, and simple cost-effective fabrication. We made top gate TFT by depositing a siloxane gate insulator through spin-coating technique on a-IGZO. For comparison, we measured a conventional a-IGZO TFT using SiO2 as a GI for a reference. The TFTs with siloxane GI showed extremely high mobility (µ= 22±3 cm2·V-1·s-1), ultra-smooth interface (no hysteresis), and including other suitable electrical characteristics that are promising to enable the possibility to fabricate high performance all-solution processed devices in the future.

30‐3: High Performance All Solution Processed Oxide Thin‐Film Transistor via Photo‐induced Semiconductor‐to‐Conductor Transformation of a‐InZnO

“…This process was subsequently performed until a 50-nm-thick a-IZO layer is formed. A hybrid organicinorganic siloxane film [5,6] was then spin-coated as the gate insulator. Another 50-nm-thick a-IZO layer was then spin-coated on top of the gate insulator using the same process used in the first a-IZO layer.…”

Self-Assembled Nanodielectrics for Solution-Processed Top-Gate Amorphous IGZO Thin-Film Transistors

“…60 Additional large literature mobilities are 35.6, 26, 22, and 21.20 cm 2 V −1 s −1 produced by top-gate topcontact (TG-TC) devices with 10 nm RF sputtered SiO 2 and a buried ITO layer in a-IGZO via RF sputtering, TG-BC devices with a sputtered SiO x /SiN x dielectric, TG-TC transistors utilizing a 250 nm spin-coated siloxane dielectric, and coplanar contact devices with a 150 nm SiO x dielectric, respectively. 54,59,66,69 All of the aforementioned devices used sputtered IGZO. Impressively, the present Hf-SAND devices yield the seventh highest mobility (μ SAT = 19.4 cm 2 V −1 s −1 ) out of the 31 literature examples while being the only TFTs fabricated from both solution-processed dielectric and semiconductor layers.…”

Flexible electric-double-layer thin film transistors based on a vertical InGaZnO4 channel

“…Recently, there has been a strong interest in the use of InGaZnO 4 lm as a channel layer in thin lm transistors (TFTs). [1][2][3][4][5] However, these TFTs usually require high operation voltages (>10 V). High operation voltage results in high power consumption, a critical barrier for portable, battery-powered applications.…”