30‐3: High Performance All Solution Processed Oxide Thin‐Film Transistor via Photo‐induced Semiconductor‐to‐Conductor Transformation of a‐InZnO

Bermundo, Juan Paolo; Kulchaisit, Chaiyanan; Corsino, Dianne; Syairah, Aimi; Fujii, Mami N.; Ikenoue, Hiroshi; Ishikawa, Yoshihiro; Uraoka, Yukiharu

doi:10.1002/sdtp.12946

Cited by 9 publications

(13 citation statements)

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“…The self-aligned TFT structure permits the implementation of only three deposition steps and two patterning steps. We previously showed the elemental mapping of the cross-section of the fully solution-processed a -IZO TFT obtained by energy-dispersive X-ray spectroscopy (EDX) . The results of EDX confirm the distinct IZO gate, F-PSQ GI, and IZO channel and source/drain layers.…”

Section: Resultsmentioning

confidence: 74%

“…Another crucial discussion is on the mechanism to activate the a -IZO into conductive electrodes. The elemental concentration in the a -IZO film on the Si/SiO 2 substrate, without the F-PSQ GI and a -IZO top-gate layers, was also measured and analyzed in a previous work . Interestingly, comparing the as-deposited and UV-irradiated a -IZO, elemental concentrations of hydrogen, oxygen, and hydroxide are negligibly changed.…”

Section: Resultsmentioning

confidence: 99%

“…In-depth analyses were performed to exhaust changes in electrical, optical, and structural properties as well as reveal information about composition and bonding in the irradiated a -IZO. To verify the semiconductor-to-conductor conversion of a -IZO, sheet resistance ( R s ) was measured using the four-point probe method before and after irradiation . There is a drastic decrease in the R s of about 2 orders of magnitude from 1.45 × 10 4 Ω sq –1 for the as-deposited a -IZO to 1.35 × 10 2 and 2.98 × 10 2 Ω sq –1 after single UV irradiation or a single ELA treatment.…”

Section: Resultsmentioning

confidence: 99%

“…Our initial report on fully solution-processed a-IZO TFT achieved a μ of up to 24 cm 2 V −1 s −1 using photo-assisted treatments, namely UV and excimer laser annealing (ELA). 36 Nevertheless, the important mechanism such as mobility enhancement and semiconductor-to-conductor transformation was not comprehensively discussed. In addition, the photoassisted treatments performed were limited to ambient conditions.…”

Section: T H Imentioning

confidence: 99%

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High-Performance Fully Solution-Processed Oxide Thin-Film Transistors via Photo-Assisted Role Tuning of InZnO

Corsino

Bermundo

Kulchaisit

et al. 2020

ACS Appl. Electron. Mater.

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The realization of next-generation flexible electronics involves the successful integration of functional solutionprocessed materials using simple and low-temperature fabrication techniques that are applicable to heat-sensitive substrates. Although there are numerous studies on the single solutionprocessed layer in an oxide thin-film transistor (TFT) structure, integrating all solution-based layers remains challenging. Here, fully solution-processed amorphous InZnO (a-IZO) TFTs were demonstrated utilizing the solution-based channel, gate insulator, and electrodes with a maximum fabrication temperature of 300 °C. Particularly, a single layer of a-IZO was used as both the channel and the source/drain electrode layer by selectively tuning the role of a-IZO as a semiconductor or a conductor through photoassisted treatments. By employing a self-aligned TFT structure, the a-IZO electrodes were functionalized by UV irradiation and excimer laser annealing (ELA). The fully solution-processed a-IZO TFTs exhibited high performance with an average mobility of up to 38 cm 2 V −1 s −1 , which surpasses those of previously reported approaches for fully solution-processed oxide TFTs. Moreover, the overall device performance, including a subthreshold swing of 225 mV dec −1 and an on-voltage of −0.4 V, is comparable to those of vacuum-processed oxide TFTs. In-depth analyses suggest that the successful functionalization of the a-IZO semiconductor into conductive electrodes is due to oxygen vacancy generation after UV treatment and subsequent crystallization and densification of the irradiated a-IZO areas after ELA. The demonstration of simple low-temperature photofunctionalization of solution-based oxide materials can be applied to 3D printing and can advance the high-throughput display manufacturing such as roll-to-roll processing.

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Section: Resultsmentioning

confidence: 74%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: T H Imentioning

confidence: 99%

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High-Performance Fully Solution-Processed Oxide Thin-Film Transistors via Photo-Assisted Role Tuning of InZnO

Corsino

Bermundo

Kulchaisit

et al. 2020

ACS Appl. Electron. Mater.

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“…Self-aligned IZO TFTs were fabricated using all-solution based channel, gate insulator, and electrodes. Previously, we reported the photo-induced semiconductor-to-conductor transformation of amorphous IZO using UV irradiation and KrF ELA [8]. Before photo-functionalization, the IZO TFTs did not exhibit switching behavior because the exposed IZO have insufficient conductivity to act as electrodes.…”

Section: "0(/ *! and 0and+*mentioning

confidence: 99%

P‐11: High Performance All‐Solution Processed InZnO Thin‐Film Transistors via Photo‐Functionalization at Varying Fluence and Annealing Environment

Corsino

Bermundo

Fujif

et al. 2020

Symp Digest of Tech Papers

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High‐Performance Full‐Solution‐Processed Oxide Thin‐Film Transistor Arrays Fabricated by Ultrafast Scanning Diode Laser

Peng

et al. 2022

Adv Materials Inter

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On the other hand, most previous reports in solutionprocessed TFTs are focused on the nonpatterned single TFT from spin coating, which have rather large channel length (>50 µm) through the thermal evaporation that it is not suitable for the application in high-resolution active-matrix displays. [11,12] Therefore, in order to make TFT more practical for the application, the full-solution-processed TFT arrays with channel lengths of less than 10 µm must be fabricated by the photolithographic-patterned technique. Furthermore, it is also noted that solution-processed TFTs have typical disadvantages of high temperature (>400 °C), long time and high cost, [13][14][15] the alternative approach to fabricate full-solution-processed TFT array is the fast and energy-efficient postprocessing method of the ultrafast scanning diode laser annealing (USDLA), which provide a viable solution for commercialization, especially for displays and circuits.Meanwhile, the TFT devices directly expose to the atmospheric environment, the ambient water (H 2 O) and oxygen (O 2 ) that diffuse into the active layer can accelerate degradation of the device stability. [16,17] Usually, a passivation layer is used to isolate the device from the external environment to achieve the effect of blocking H 2 O and O 2 , thereby improving the stability of the device. And the silicon oxide thin films are widely used for passivation material because of its advantages, such as wide band gap, low leakage current density, and high industrial compatibility. [18][19][20][21][22] In addition, TFTs are inevitably exposed to light environment (from ambient light, the backlight of liquid crystal display panels, or self-illumination of active-matrix organic light-emitting diode), the light sensitivity of oxide TFTs should be minimized to ensure the application in practical displays. [23,24] Especially for the full-solution-processed oxide TFT remains suffering from severe bias-stress instability. [20,23,25] So, it is necessary to improve the stability under bias illumination stress for the full-solution-processed oxide TFT.Accordingly, on the basis of our previous studies for the tungsten-zinc-tin-oxide (WZTO) active layer, [26] the indium-tin-oxide (ITO) electrodes and the hafnium-aluminum-oxide (HAO) gate dielectric layers are further investigated comprehensively to The full-solution-processed oxide thin-film transistor (TFT) array is successfully realized by using ultrafast scanning diode laser annealing (USDLA). It integrates all solution-processed functional thin films well, including low-electrical-resistivity transparent conductive indium-tin-oxide (ITO) thin film, high-k dielectric hafnium-aluminum-oxide (HAO) thin film, and high-quality semiconductor tungsten-zinc-tin-oxide (WZTO) thin film. And the stacked multilayer thin films as a whole exhibit a smooth surface with the root mean square (RMS) roughness of 0.293 nm. The full-solution-processed TFT array exhibits a uniform overall TFT device performance, the average values including subthreshold swing of 11...

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30‐3: High Performance All Solution Processed Oxide Thin‐Film Transistor via Photo‐induced Semiconductor‐to‐Conductor Transformation of a‐InZnO

Cited by 9 publications

References 9 publications

High-Performance Fully Solution-Processed Oxide Thin-Film Transistors via Photo-Assisted Role Tuning of InZnO

High-Performance Fully Solution-Processed Oxide Thin-Film Transistors via Photo-Assisted Role Tuning of InZnO

P‐11: High Performance All‐Solution Processed InZnO Thin‐Film Transistors via Photo‐Functionalization at Varying Fluence and Annealing Environment

High‐Performance Full‐Solution‐Processed Oxide Thin‐Film Transistor Arrays Fabricated by Ultrafast Scanning Diode Laser

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