High-Performance TiN/Al2O3/ZnO/Al2O3/TiN Flexible RRAM Device With High Bending Condition

Kumar, Dayanand; Chand, Umesh; Lew, Wen Siang; Tseng, Tseung‐Yuen

doi:10.1109/ted.2019.2959883

Cited by 53 publications

(38 citation statements)

References 41 publications

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“…In this review, we will present RRAM-related inorganic materials with oxides, solid electrolyte and two-dimensional (2D) materials. [9,20,75], NiO [8,12,76], TiO 2 [21,77,78], HfO 2 [60,79,80], ZnO [81][82][83], and ZrO 2 [22,84,85] are always playing main roles in materials application of RS medium. The first report of RS performance in binary metal oxides was proposed by Hickmott in 1962 [91], which demonstrated the RS characteristics of Al/Al 2 O 3 /Al device under the effect of an electric field.…”

Section: Thin Film Materials Of Rs Mediummentioning

confidence: 99%

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

et al. 2020

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Resistive random access memory (RRAM) devices are receiving increasing extensive attention due to their enhanced properties such as fast operation speed, simple device structure, low power consumption, good scalability potential and so on, and are currently considered to be one of the next-generation alternatives to traditional memory. In this review, an overview of RRAM devices is demonstrated in terms of thin film materials investigation on electrode and function layer, switching mechanisms and artificial intelligence applications. Compared with the well-developed application of inorganic thin film materials (oxides, solid electrolyte and two-dimensional (2D) materials) in RRAM devices, organic thin film materials (biological and polymer materials) application is considered to be the candidate with significant potential. The performance of RRAM devices is closely related to the investigation of switching mechanisms in this review, including thermal-chemical mechanism (TCM), valance change mechanism (VCM) and electrochemical metallization (ECM). Finally, the bionic synaptic application of RRAM devices is under intensive consideration, its main characteristics such as potentiation/depression response, short-/long-term plasticity (STP/LTP), transition from short-term memory to long-term memory (STM to LTM) and spike-time-dependent plasticity (STDP) reveal the great potential of RRAM devices in the field of neuromorphic application.

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Section: Thin Film Materials Of Rs Mediummentioning

confidence: 99%

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

et al. 2020

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“…The RS mechanism of the device, which includes the formation and rupture of the conductive filament for the device, is illustrated in figure 3. The CF forms into a conical shape, where the thicker part of the filament is on the cathode side while the thinner part is on the anode side [26]. Therefore, during the electroforming or SET process, the RS region is feasibly closer to the interface of ITO TE and the HfO 2 layer in the ITO/HfO 2 /ITO device, as shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…The ITO/HfO 2 /ITO structure is thus a good candidate for a fully transparent resistive random-access memory (RRAM) device. Bipolar switching is commonly ascribed to a vacancy filament, which can be alternately ruptured or reformed via oxygen exchange with the electrode [26], [27]. The RS mechanism of the device, which includes the formation and rupture of the conductive filament for the device, is illustrated in figure 3.…”

Section: Resultsmentioning

confidence: 99%

“…When a positive voltage is applied to the ITO TE, oxygen vacancies are generated in the HfO 2 layer and migrate toward the ITO BE to form conical shape filament. When positive voltage is applied on ITO TE, oxygen vacancies (V 2+ o ) are generated in the HfO 2 layer and migrate toward the ITO BE while oxygen ions drift toward the ITO TE and are transformed into oxygen ions (O 2− ), creating a conical shape filament [26], [28]. This process is called the reduction process.…”

Section: Resultsmentioning

confidence: 99%

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Highly Transparent ITO/HfO₂/ITO Device for Visible-Light Sensing

et al. 2020

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Transparent visible-light sensors are of critical importance in invisible optoelectronic circuits as the interface between the optical and electrical domains. However, devices designed based on photocarrier generation for light sensing limit the transparency of the device in the visible region, as the optically active layer also passively absorbs light continuously. In this work, we present an all-transparent ITO/HfO 2 /ITO device with the wide bandgap HfO 2 functioning as the resistive switching and the light sensing element. Electrically switching the resistive state of the device to a low-resistance soft-breakdown state is demonstrated to cause the wide-bandgap visible-light blind HfO 2 to become photoresponsive. This allows us to optically functionalize the device for an optical response by electrical breakdown in the oxide and can be triggered on-demand. Apart from the on-demand optical response in the device, the inherent resistive switching properties of the HfO 2 device allow for integration of memory and optical sensing capabilities, presenting a novel phenomenon for optical sensing in invisible optoelectronics. INDEX TERMS Non-volatile optical memory, photosensor, ReRAM, transition metal oxides, transparent electronics. PRANAV SAIRAM KALAGA received the B.Tech. and M.Tech. degrees in electrical engineering from the Indian Institute of Technology Madras, Chennai, India, in 2016. He is currently pursuing the Ph.D. degree with Nanyang Technological University, Singapore. His current research interests include resistive random access memory devices, wide-bandgap oxide-based optical sensors, transparent sensors, plasmonics, and CMOS fabrication technology.

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“…The mechanism of resistive random access memory (RRAM) is resistance switching through the conductive filament growth and rupture which is controlled by applied voltage [1][2][3][4][5]. The most common resistance switching materials are transition metal oxides, such as HfO x , TiO x , ZnO x , WO x , TaO x , NiO x , and AlO x [6][7][8][9][10][11][12][13][14]. However, RRAM with traditional resistance switching materials has some problems such as large reading current, low integration density, and big power consumption.…”

Section: Introductionmentioning

confidence: 99%

Mechanisms and Modeling of 2d-Materials-Based Resistive Random Access Memory Devices (Invited Review)

Xie¹,

Wang²,

Yang³

et al. 2021

PIER

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Resistive random access memory (RRAM) devices are promising candidates for next generation high capacity data storage due to their superior properties such as cost-effective fabrication, high operating speed, low power consumption, and long data retention. Particularly, the two dimensional (2D)-materials-based RRAM has attracted researchers' attention because of its unique physical and chemical properties without the constraint of lattice matching. In this review, the switching mechanisms and modeling of RRAM devices based on the 2D materials such as hexagonal-boron nitride (h-BN) and graphene are discussed. Firstly, the monolayer and multilayer h-BN RRAMs are introduced, and their mechanisms and compact model are further described. Then, the mechanisms of graphene electrodebased RRAM (GE-RRAM) for different applications are also introduced and compared. Furthermore, the electrical conductivity, multi-physic and compact models of GE-RRAM are introduced. This review paper provides the guidance for the design and optimization of the 2D-materials-based RRAM in the next generation memories.

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High-Performance TiN/Al₂O₃/ZnO/Al₂O₃/TiN Flexible RRAM Device With High Bending Condition

Cited by 53 publications

References 41 publications

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Highly Transparent ITO/HfO₂/ITO Device for Visible-Light Sensing

Mechanisms and Modeling of 2d-Materials-Based Resistive Random Access Memory Devices (Invited Review)

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High-Performance TiN/Al2O3/ZnO/Al2O3/TiN Flexible RRAM Device With High Bending Condition

Cited by 53 publications

References 41 publications

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Advances of RRAM Devices: Resistive Switching Mechanisms, Materials and Bionic Synaptic Application

Highly Transparent ITO/HfO2/ITO Device for Visible-Light Sensing

Mechanisms and Modeling of 2d-Materials-Based Resistive Random Access Memory Devices (Invited Review)

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High-Performance TiN/Al₂O₃/ZnO/Al₂O₃/TiN Flexible RRAM Device With High Bending Condition

Highly Transparent ITO/HfO₂/ITO Device for Visible-Light Sensing