High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

Liu, H.Y.; Childs, David; Badcock, T. J.; Groom, K. M.; Sellers, Ian R.; Hopkinson, M.; Hogg, R. A.; Robbins, David J.; Mowbray, D. J.; Skolnick, M. S.

doi:10.1109/lpt.2005.846948

Cited by 146 publications

(61 citation statements)

References 17 publications

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“…In principle, a QD active region can couple every injected electron and hole to the lasing mode so that the change in gain per change in injected electron is increased over a planar well [2]. The advantages of quantum dots over quantum wells are due to their unique density of states resulting from three-dimensional confinement of carriers [3]. Ultralow threshold current and high temperature stability has been demonstrated for 1.3 lm selfassembled quantum dot (QD) lasers by many research groups [4][5][6][7].…”

Section: Introductionmentioning

confidence: 99%

Impact of gain compression factor on modulation characteristics of InGaAs/GaAs self-assembled quantum dot lasers

et al. 2016

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This paper investigates the influence of gain compression factor on the modulation response of InGaAs/GaAs self-assembled quantum dot laser based on rate equations. For different gain compression factors the output power-current characteristics, light emissions of quantum dot laser have been simulated and effect of gain compression factor changes on quantum dot laser is illustrated. Also, small and large-signal response of quantum dot lasers is studied and the impact of the gain compression factor is presented. It explains that increase of gain compression factor, decreases small-signal modulation characteristics, nevertheless, improves large-signal response of quantum dot lasers. It helps to generate better laser signal quality, higher eye and smaller jitter. The large-signal behavior of a laser diode determines its capability for digital data transfer. The modulation speed of quantum dot lasers is of specific importance if such lasers are considered for optical communication systems.

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Section: Introductionmentioning

confidence: 99%

Impact of gain compression factor on modulation characteristics of InGaAs/GaAs self-assembled quantum dot lasers

et al. 2016

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“…Until recently QDs have been mainly optimized for different applications, such as for example for single-photon emitters [22], for low-threshold emitters [23], for multi-QD-layers SESAMs [24], for cavity quantum electrodynamics [25] or for quantum computations [26]. Here we operate in a completely different regime because we used low temperature (LT) MBE growth to obtain a fast recovery time.…”

Section: Introductionmentioning

confidence: 99%

Vertical integration of ultrafast semiconductor lasers

et al. 2007

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Lasers generating short pulses -referred to as ultrafast lasers -enable many applications in science and technology. Numerous laboratory experiments have confirmed that ultrafast lasers can significantly increase telecommunication data rates [1], improve computer interconnects, and optically clock microprocessors [2,3]. New applications in metrology [4], supercontinuum generation [5], and life sciences with two-photon microscopy [6] only work with ultrashort pulses but have relied on bulky and complex ultrafast solid-state lasers. Semiconductor lasers are ideally suited for mass production and widespread applications, because they are based on a waferscale technology with a high level of integration. Not surprisingly, the first lasers entering virtually every household were semiconductor lasers in compact disk players. Here we introduce a new concept and make the first feasibility demonstration of a new class of ultrafast semiconductor lasers which are power scalable, support both optical and electrical pumping and allow for wafer-scale fabrication. The laser beam propagates vertically (perpendicularly) through the epitaxial layer structure which has both gain and absorber layers integrated. In contrast to edge-emitters, these lasers have semiconductor layers that can be optimized separately by using different growth parameters and with no regrowth. This is especially important to integrate the gain and absorber layers, which require different quantum confinement. A saturable absorber is required for pulse generation and we optimized its parameters with a single selfassembled InAs quantum dot layer at low growth temperatures. We refer to this class of devices as modelocked integrated external-cavity surface emitting lasers (MIXSEL). Vertical integration supports a diffraction-limited circular output beam, transformlimited pulses, lower timing jitter, and synchronization to an external electronic clock. The pulse repetition rate scales from 1-GHz to 100-GHz by simply changing the laser cavity length. This result holds promise for semiconductor-based high-volume wafer-scale fabrication of compact, ultrafast lasers.

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“…The DFLs consisted of five-periods of 10-nm In 0.18 Ga 0.82 As/10-nm GaAs. After the DFLs a 400-nm GaAs spacer layer was deposited followed by an InAs/GaAs dot-in-a-well (DWELL) structure grown at ~510 °C, similar to that optimized on GaAs substrates [21][22][23]. The 5 DWELLs were embedded between two 100-nm GaAs layers grown at 580 °C and 50-nm AlGaAs layers grown at 610 °C.…”

Section: Epitaxial Growth and Defect Analysismentioning

confidence: 99%

Analysing radiative and non-radiative recombination in InAs QDs on Si for integrated laser applications

et al. 2016

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Three InAs quantum dot (QD) samples with dislocation filter layers (DFLs) are grown on Si substrates with and without in-situ annealing. Comparison is made to a similar structure grown on a GaAs substrate. The three Si grown samples have different dislocation densities in their active region as revealed by structural studies. By determining the integrated emission as a function of laser power it is possible to determine the power dependence of the radiative efficiency and compare this across the four samples. The radiative efficiency increases with decreasing dislocation density; this also results in a decrease in the temperature quenching of the PL. A laser structures grown on Si and implementing the same optimum DFL and annealing procedure exhibits a greater than 3 fold reduction in threshold current as well as a two fold increase in slope efficiency in comparison to a device in which no annealing is applied.

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High-performance three-layer 1.3-/spl mu/m InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents

Cited by 146 publications

References 17 publications

Impact of gain compression factor on modulation characteristics of InGaAs/GaAs self-assembled quantum dot lasers

Impact of gain compression factor on modulation characteristics of InGaAs/GaAs self-assembled quantum dot lasers

Vertical integration of ultrafast semiconductor lasers

Analysing radiative and non-radiative recombination in InAs QDs on Si for integrated laser applications

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