High-Performance Thin Film Transistor with Amorphous In₂O₃–SnO₂–ZnO Channel Layer

Abstract

We have developed a high-mobility and high-processability oxide semiconductor using amorphous In2O3–SnO2–ZnO (a-ITZO) as the channel material. An a-ITZO thin-film transistor (TFT) was fabricated by a back-channel-etch process. Its field effect mobility was more than 20 cm2 V-1 s-1 and its subthreshold swing was 0.4 V s-1, which makes it a promising candidate for next-generation TFTs.

P‐1: Fabrication of a Short‐Channel Oxide TFT Utilizing the Resistance‐Reduction Phenomenon in In‐Ga‐Sn‐O

“…To achieve high resolution, high frame rates, and low power consumption, the TFTs must have a high ON current at low driving voltage. Increasing the field-effect mobility of TFTs is an effective means to achieve a high ON current, and thus several types of semiconductor materials such as In-Sn-Zn-O [3][4][5], Zn-O-N [6,7], In-Ga-O [8], and In-W-Zn-O [9] are being studied for this purpose. In addition, reducing the TFT channel length is another an effective way to achieve a high ON current.…”

Development of flexible displays using back-channel-etched In-Sn-Zn-O thin-film transistors and air-stable inverted organic light-emitting diodes

“…It is estimated that a mobility level surpassing that of IGZO (approximately 10 cm 2 /Vs) is necessary for 8 K SHV OELD displays larger than 100 in.. Indiumtin-zinc-oxide (ITZO) is a promising material for sheet-type 8 K SHV OLED displays because it has achieved a higher mobility than IGZO. [8][9][10] Furthermore, ITZO may facilitate the fabrication of a back-channel-etched (BCE) structure without an etch-stopper (ES) layer on the semiconductor, which leads to a shorter channel length and smaller parasitic capacitance than that with the conventional ES structure widely used in IGZO-TFTs because of its insolubility in the phosphoric, acetic, and nitric acid (PAN) etchants 9 used to pattern Mo and Al source/drain (S/D) electrodes.…”

Effects of Mg Suppressor Layer on the InZnSnO Thin-Film Transistors

“…However, the next generation AM displays require a larger screen size, a higher frame rate, and a higher resolution than the currently commercialized AM displays, which implies that the field-effect mobility of the a-IGZO TFT (typically 10 ~ 20 cm 2 /Vs [2,3]) is not enough for the next generation AM displays. Recently, several groups successfully fabricated the high mobility (> 30 cm 2 /Vs) amorphous oxide TFTs using amorphous indium-zinc-tin-oxide (a-ITZO) as a channel material [4,5]. In a-ITZO TFTs, electrons move through the s-orbital overlap between In and Sn metal elements [4], which increases the fieldeffect mobility of the devices.…”

“…Recently, several groups successfully fabricated the high mobility (> 30 cm 2 /Vs) amorphous oxide TFTs using amorphous indium-zinc-tin-oxide (a-ITZO) as a channel material [4,5]. In a-ITZO TFTs, electrons move through the s-orbital overlap between In and Sn metal elements [4], which increases the fieldeffect mobility of the devices. However, the electrical stability of the a-ITZO TFT is still poorer than a-IGZO TFTs, and needs to be much improved for commercial applications.…”