High performance thin-film flip-chip InGaN–GaN light-emitting diodes

Shchekin, O.B.; Epler, J. E.; Trottier, T. A.; Margalith, Tal; Steigerwald, D. A.; Holcomb, M.O.; Martin, P.; Krames, Michael R.

doi:10.1063/1.2337007

Cited by 330 publications

(170 citation statements)

References 14 publications

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“…With much development work, an extraction efficiency as high as 80%, as illustrated in Fig. 9 (reprinted from [47]), has been demonstrated by combining flip chip mounting, substrate removal, reflective metal contacts, and surface texturing [47,84].…”

Section: State-of-the-art Light Extractionmentioning

confidence: 99%

Research challenges to ultra‐efficient inorganic solid‐state lighting

Phillips¹,

Coltrin

Crawford

et al. 2007

Laser & Photonics Reviews

368

268

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Solid-state lighting is a rapidly evolving, emerging technology whose efficiency of conversion of electricity to visible white light is likely to approach 50% within the next several years. This efficiency is significantly higher than that of traditional lighting technologies, giving solid-state lighting the potential to enable significant reduction in the rate of world energy consumption. Further, there is no fundamental physical reason why efficiencies well beyond 50% could not be achieved, which could enable even more significant reduction in world energy usage. In this article, we discuss in some detail: (a) the several approaches to inorganic solid-state lighting that could conceivably achieve "ultra-high," 70% or greater, efficiency, and (b) the significant research questions and challenges that would need to be addressed if one or more of these approaches were to be realized.

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Section: State-of-the-art Light Extractionmentioning

confidence: 99%

Research challenges to ultra‐efficient inorganic solid‐state lighting

Phillips¹,

Coltrin

Crawford

et al. 2007

Laser & Photonics Reviews

368

268

View full text Add to dashboard Cite

show abstract

“…8 Flip-chip (FC)-LEDs are becoming increasingly popular as a means to facilitate chip-level integration and achieve high power and efficiency. [9][10][11] For example, in FC-LEDs, heat can dissipate through the Si submount, and the light output power will not be influenced by this because of optical blocking by the highly reflective electrodes. [12][13][14] However, the poor LEE of FC-LEDs is still a bottleneck in their development.…”

Section: Introductionmentioning

confidence: 99%

Improved light extraction efficiency of GaN-based flip-chip light-emitting diodes with an antireflective interface layer

Dongxue

Liu

et al. 2016

AIP Advances

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GaN-based flip-chip light-emitting diodes (FC-LEDs) grown on nanopatterned sapphire substrates (NPSS) are fabricated using self-assembled SiO2 nanospheres as masks during inductively coupled plasma etching. By controlling the pattern spacing, epitaxial GaN can be grown from the top or bottom of patterns to obtain two different GaN/substrate interfaces. The optoelectronic characteristics of FC-LED chips with different GaN/sapphire interfaces are studied. The FC-LED with an antireflective interface layer consisting of a NPSS with GaN in the pattern spacings demonstrates better optical properties than the FC-LED with an interface embedded with air voids. Our study indicates that the two types of FC-LEDs grown on NPSS show higher crystal quality and improved electrical and optical characteristics compared with those of FC-LEDs grown on conventional planar sapphire substrates.

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“…[2][3][4][5] One of them consists in using metallic structures to enhance the radiative rate thanks to the surface plasmons they support. 6,7 These plasmon modes have a high local density of states, and consequently catch the main part of the emission, which can then be coupled to radiative light with a corrugation (either periodic 6 or not 8,9 ).…”

mentioning

confidence: 99%