Enhanced light extraction from InGaN/GaN quantum wells with silver gratings

Homeyer, Estelle; Mattila, Pirkko; Oksanen, Jani; Sadi, Toufik; Nykänen, Henri; Suihkonen, Sami; Symonds, C.; Tulkki, Jukka; Tuomisto, Filip; Sopanen, Markku; Bellessa, J.

doi:10.1063/1.4794066

Cited by 31 publications

(35 citation statements)

References 20 publications

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“…Okamoto et al (2004) reported for the first time large photoluminescence (PL) increases from InGaN/GaN QW material coated with metal layers. Homeyer et al (2013) demonstrate that an extraction enhancement by a factor of 2.8 can be obtained for a GaN quantum well structure using metallic nanostructures, compared to a flat semiconductor. Many theoretical and experimental researches have demonstrated that, for the dielectricbased photonics, large portion of electromagnetic waves spread over the space and cannot be confined in a small region due to the diffraction limit of light.…”

Section: Introductionmentioning

confidence: 95%

Binary control of plasmonic nano rods to design an optical switch

2015

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An efficient binary optimization method named binary particle swarm optimization (BPSO) algorithm was used to optimize an array of plasmonic nano-rods in order to design an optical switch. In the proposed switch, the optical switch has been excited by two monochromatic incident plan-waves with the same frequency and two angles of incident h = 0 and h = 90. When only the signal with h = 0 is applied, the incident wave is transmitted and when both signals are applied to the switch simultaneously, the coherent perfect absorption occurs and the two incident waves are suppressed. Therefore, the signal with h = 90 acts as control signal. BPSO, a swarm of birds including a matrix with binary entries responsible for controlling nano-rods in the array, shows the presence with symbol of ('1') and the absence with ('0').

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Section: Introductionmentioning

confidence: 95%

Binary control of plasmonic nano rods to design an optical switch

2015

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“…In this paper, we study using fluctuational electrodynamics a technologically simple extraction enhancement technique introduced in [1], where a metallic nano-grating is deposited on top of the GaN structure and covered with an organic (polymer) layer. Measurements made recently on luminescence enhancement using optical excitation demonstrated that an extraction enhancement factor of up to 2.8 can be obtained from the polymer structure [1], compared to a flat semiconductor structure.…”

Section: Introductionmentioning

confidence: 99%

“…E MISSION enhancement engineering by tailoring the scattering and the optical local density of states (LDOS) of light-emitting diodes (LEDs) is expected to contribute potentially to more efficient energy technologies [1]− [3]. In particular, indium gallium nitride (InGaN) emitters play a key role in energy-efficient lighting and display components.…”

Section: Introductionmentioning

confidence: 99%

Improving Light Extraction From GaN Light-Emitting Diodes by Buried Nano-Gratings

Sadi

Oksanen

Tulkki

2014

IEEE J. Quantum Electron.

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Recent experimental work has demonstrated that the light extraction enhancement due to scattering by a metallic nano-grating in an InGaN/GaN quantum well (QW) structure can be improved significantly by burying the grating in a dielectric, such as polyvinyl alcohol (PVA). In this paper, we employ the fluctuational electrodynamics method to investigate the origin of this improvement and to provide guidelines on how to optimize emission efficiency in these structures. Our results show that metallic grating diffracts efficiently the high-intensity PVA resonances trapped in the structure, because of the large permittivity contrast between the metal and semiconductor, providing the reported exceptional enhancement for s-polarization. We also study the effect of two important physical factors in the enhancement: 1) the thickness of the GaN barrier separating the QW from the grating and 2) the thickness of the InGaN QW. Results reveal that the enhancement efficiency can be maintained even when the QW is not in the near field of the grating, for a QW-grating separation of up to 1 µm. This is in contrast to plasmonic structures, where enhancement strongly decreases as the separation is increased. However, the enhancement factor can also vary strongly at the local level in smaller spatial intervals. Results also show that the enhancement significantly decreases with the QW thickness due to the losses in the QW.Index Terms-GaN quantum well (QW) light-emitting structures, diffraction gratings, luminescence enhancement, fluctuational electrodynamics method.

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“…This problem seriously hindered the realization of high external quantum efficiency (EQE) of LEDs. Some methods toward improving the LEE of LED devices have been proposed, mainly including photonic crystal (PC) [2,3], localized surface plasmons (LSPs) [4][5][6], patterned substrate [7] and surface roughening [8][9][10][11][12]. Specifically, surface roughening is widely accepted on account of its simple and efficient characteristics.…”

Section: Introductionmentioning

confidence: 99%

Improvement of light extraction efficiency in InGaN/GaN-based light-emitting diodes with a nano-roughened p-GaN surface

Xiang-Jing

Zhang

et al. 2014

J Mater Sci: Mater Electron

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The following paper presents a study on the performance of InGaN/GaN-based light-emitting diodes (LEDs) with a nano-roughened p-GaN surface, which were grown by metal-organic chemical vapor deposition. This nano-roughened p-GaN surface was obtained by using nitrogen (N 2 ) as cyclopentadienyl magnesium (Cp 2 Mg) carrier gas during the growth of p-GaN layer. Research results show that the surface roughness of p-GaN layer is influenced by the injection flow of N 2 and the injection time of N 2 . Under the optimal process condition, the light output power of LED with a nano-roughened p-GaN surface is improved by 30.4 % compared with that of conventional LED with an injection current of 20 mA. Meanwhile, current-voltage curve shows that the electrical performance of this sample is similar to that of conventional LED. The improvement of light output power is mainly attributed to the higher light extraction efficiency when nano-roughened p-GaN surface is adopted.

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Enhanced light extraction from InGaN/GaN quantum wells with silver gratings

Abstract: Effect of the band structure of InGaN/GaN quantum well on the surface plasmon enhanced light-emitting diodes J. Appl. Phys. 116, 013101 (2014); 10.1063/1.4886223Effect of plasmonic losses on light emission enhancement in quantum-wells coupled to metallic gratings

Cited by 31 publications

References 20 publications

Binary control of plasmonic nano rods to design an optical switch

Binary control of plasmonic nano rods to design an optical switch

Improving Light Extraction From GaN Light-Emitting Diodes by Buried Nano-Gratings

Improvement of light extraction efficiency in InGaN/GaN-based light-emitting diodes with a nano-roughened p-GaN surface

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