High-performance thermoelectric Cu2Se nanoplates through nanostructure engineering

Yang, Lei; Chen, Zhigang; Han, Guang; Hong, Min; Zou, Yichao; Zou, Jin

doi:10.1016/j.nanoen.2015.07.012

Cited by 231 publications

(154 citation statements)

References 34 publications

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“…In the study of La-doped and I-doped PbTe systems, Pei et al [111] confirmed that the relationship of n* ∝ (m d *T) 1.5 can be used to accurately estimate n* for the doped PbTe systems. [42,48] This may guide us to target different n* for different materials depending upon their intended application temperature. For example, Bi 2 Te 3 has n* with a level of 10 19 at room temperature, [123] while Cu 2 Se has n* > 10 20 at room temperature.…”

Section: Wwwadvancedsciencenewscommentioning

confidence: 99%

“…High TE efficiency requires high ZT value of materials, which is essential to make the TEGs competitive with other alternative energy sources and expands the extent of the application. In recent decades, different TE materials, including Skutterudites, [24][25][26][27][28] Clathrates, [29][30][31][32] complex alloys, [33][34][35][36][37][38][39][40] metal chalcogenides, [41][42][43][44][45][46][47][48][49][50][51][52] conductive polymers, [53][54][55][56][57][58] and some oxides, [59][60][61][62] have been identified as promising systems with intrinsically high ZT. [1,4] However, S, σ, and κ e are strongly coupled through the carrier concentration (n), [1] so that they interact and conflict with each other.…”

Section: Introductionmentioning

confidence: 99%

“…Based on the fundamental understandings on TEs, tremendous efforts have been devoted to achieve ZT > 2, such as in Bi 2 Te 3 / Sb 2 Te 3 superlattice, [66] PbTe, [67] SnSe, [47,68] and Cu 2 Se, [69] in addition to extensive achievement of ZT values above unity. [48,[70][71][72][73] Table 1 summarizes the current progress with ZT >1.5 in the past five years, in which PbTe takes a very large part because of its intrinsically low κ caused by anharmonic phonon scattering, [74] its good electrical transport properties, and tunable band structure. [75,76] Cu 2 Se-and SnSe-based materials were newly realized as excellent TE materials because of the Cu ion liquid-like behavior [42] in Cu 2 Se, and ultralow κ L of SnSe due to the anharmonic scattering mechanism coming from the lone s-pair electrons, [47] which have been recognized in many chalcogenides.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

High Performance Thermoelectric Materials: Progress and Their Applications

Yang

Chen

Dargusch

et al. 2017

Advanced Energy Materials

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595

434

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Thermoelectric (TE) materials have the capability of converting heat into electricity, which can improve fuel efficiency, as well as providing robust alternative energy supply in multiple applications by collecting wasted heat, and therefore, assisting in finding new energy solutions. In order to construct high performance TE devices, superior TE materials have to be targeted via various strategies. The development of high performance TE devices can broaden the market of TE application and eventually boost the enthusiasm of TE material research. This review focuses on major novel strategies to achieve high‐performance TE materials and their applications. Manipulating the carrier concentration and band structures of materials are effective in optimizing the electrical transport properties, while nanostructure engineering and defect engineering can greatly reduce the thermal conductivity approaching the amorphous limit. Currently, TE devices are utilized to generate power in remote missions, solar–thermal systems, implantable or/wearable devices, the automotive industry, and many other fields; they are also serving as temperature sensors and controllers or even gas sensors. The future tendency is to synergistically optimize and integrate all the effective factors to further improve the TE performance, so that highly efficient TE materials and devices can be more beneficial to daily lives.

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Section: Wwwadvancedsciencenewscommentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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High Performance Thermoelectric Materials: Progress and Their Applications

Yang

Chen

Dargusch

et al. 2017

Advanced Energy Materials

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595

434

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“…Это позволило авторам сделать вывод, что исключительно низкая решеточная теплопроводность обусловлена рас-сеянием фононов на этих межзеренных нанограницах и нанодефектах. Этот вывод подтверждается результа-тами работ, где в наноструктурных образцах, синтези-рованных химическим методом с последующим ИПС, решеточная теплопроводность составляла 0.2 [29] и 0.23 W/(m · K) [30] при 850−900 K. Наличие таких нано-дефектов не учитывалось в расчетах теплопроводности. Именно с этим и связано существенное различие рас-четных и экспериментальных значений решеточной теп-лопроводности при температурах выше 780 K (рис.…”

Section: обсуждение результатовunclassified

Исследование теплопроводности Cu-=SUB=-2-=/SUB=-Se с учетом влияния подвижных ионов меди

Булат¹,

Иванов²,

Osvenskii³

et al. 2017

Физика Твердого Тела

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Исследована температурная зависимость теплопроводности наноструктурированных образцов селенида меди, полученных методом механохимического синтеза из исходных чистых компонентов в планетарной шаровой мельнице с последующим искровым плазменным спеканием. Измерение теплопроводности наноструктурированных образцов проводилось в диапазоне температур 410-860 K. При 410-780 K теплопроводность решетки kappaph слабо изменяется в диапазоне 0.35-0.37 W/(m·K). При более высокой температуре T>780 K kappaph снижается до 0.19 W/(m·K). Для анализа влияния подвижных ионов меди на теплопроводность решетки проведены расчеты методом молекулярной динамики с использованием классического межатомного потенциала, полученного из ab initio расчетов для кубической модификации beta-Cu2Se. Результаты моделирования демонстрируют высокую подвижность ионов меди, а расчетная температурная зависимость решеточной теплопроводности согласуется с экспериментом до 780 K. При температуре выше 780 K наблюдается отклонение kappaph от результатов расчета, которое особенно сильно выражено в наноструктурированном материале. В результате при максимальной температуре измерения решеточная теплопроводность снижается до уровня ~ 0.19 W/(m·K), что согласуется с литературными данными для наноструктурированных образов Cu2Se, полученных различными методами. DOI: 10.21883/FTT.2017.10.44983.091

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“…ZT > 2 has been identified in these binary copper chalcogenides. (ZT values of 1.7-1.9 for Cu 2−x S [12][13][14][15][16][17][18], 1.3-2.1 for Cu 2−x Se [14][15][16][17], and 0.3-1.1 for Cu 2−x Te [18][19][20]). Chemical doping has been widely adopted to tune the carrier concentration and improve the ZT of thermoelectric materials [21][22][23][24][25][26][27].…”

Section: Introductionmentioning

confidence: 98%

Na-Doping Effects on Thermoelectric Properties of Cu2−xSe Nanoplates

Yu¹,

Han²,

Kim

2017

Applied Sciences

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For this work, a β-phase Cu 2−x Se nanowire and nanoplate, and a Na-doped Cu 2−x Se nanoplate were successfully synthesized using solution syntheses. The morphologies of the Cu 2−x Se nanowire and nanoplate could be easily controlled by changing the synthetic condition. The Na-doped Cu 2−x Se nanoplate was prepared by a simple treatment of the Cu 2−x Se nanoplate with a sodium hydroxide-ethylene glycol solution. The nanopowders were then consolidated to bulk materials using spark plasma sintering (SPS). The phase structure and the microstructure of all of the samples were checked using X-ray diffraction (XRD), high-resolution transmission electron microscope (HR-TEM), and scanning electron microscope (SEM) analyses. The thermoelectric transport properties, such as the electrical conductivity, Seebeck coefficient, carrier concentration, carrier mobility, and thermal conductivity, were measured at temperature ranges from 323 to 673 K. The results show that Na played two important roles: one is reducing the carrier concentration, thereby improving the Seebeck coefficient, the other is reducing the thermal conductivity. Overall, the maximum thermoelectric figure of merit (ZT) of 0.24 was achieved at 673 K in the Na-doped Cu 2−x Se nanoplate.

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High-performance thermoelectric Cu2Se nanoplates through nanostructure engineering

Cited by 231 publications

References 34 publications

High Performance Thermoelectric Materials: Progress and Their Applications

High Performance Thermoelectric Materials: Progress and Their Applications

Исследование теплопроводности Cu-=SUB=-2-=/SUB=-Se с учетом влияния подвижных ионов меди

Na-Doping Effects on Thermoelectric Properties of Cu2−xSe Nanoplates

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