High Performance Thermistor Based on Si<sub>1−x</sub>Ge<sub>x</sub>/Si Multi Quantum Wells

Kaynak, Canan Baristiran; Yamamoto, Yuji; Göritz, Alexander; Korndörfer, F.; Zaumseil, P.; Kulse, P.; Schulz, Katrin; Wietstruck, Matthias; Shafique, Atia; Gürbüz, Yaşar; Kaynak, Mehmet

doi:10.1109/led.2018.2821710

Cited by 9 publications

(3 citation statements)

References 9 publications

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“…27 Meanwhile, SiGe/Si is a novel material used for infrared applications, and it is sought as an alternative material to VO x and amorphous Si due to its crystalline phase for low signal noise. 28,29 According to eq 2, TCR can be increased by adjusting the barrier energy, V, and also the position of E f . Therefore, to have a high TCR value in the SiGe/Si structure, a high Ge content is required, whereas the E f position is related to the SiGe layers being intrinsic or lowly doped.…”

Section: ■ Introductionmentioning

confidence: 99%

A SiGe/Si Nanostructure with Graphene Absorbent for Long Wavelength Infrared Detection

Wang,

Kong,

et al. 2023

ACS Appl. Nano Mater.

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As a representative of new semiconductor nanostructured materials, the Si0.7Ge0.3/Si multilayers have received extensive attention for electronic and photonic applications. We fabricated an uncooled detector consisting of a four-period intrinsic Si0.7Ge0.3/Si multilayer as an active part and two p-type doped electrodes (a PIP profile) for long wavelength infrared detection. The strain in the SiGe/Si multilayer was characterized globally by high-resolution X-ray diffraction (HRXRD) and locally by nanobeam diffraction (NBD) in a high-resolution transmission electron microscope. The performance of detectors was characterized by the temperature coefficient of resistance (TCR), voltage noise power spectral density, and dark current measurement. The detectors with graphene on the top electrode show an improvement for TCR from −2.65%/K to −3.94%/K. Based on our results, the SiGe/Si multilayer structure is an excellent thermal imaging material due to its excellent thermal response as well as its CMOS compatibility.

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Section: ■ Introductionmentioning

confidence: 99%

A SiGe/Si Nanostructure with Graphene Absorbent for Long Wavelength Infrared Detection

Wang,

Kong,

et al. 2023

ACS Appl. Nano Mater.

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“…Single crystalline silicon-germanium (SiGe) has been proposed as a promising thermistor material for uncooled microbolometer applications (1). In particular, single crystalline SiGe/Si multi-quantum well (MQW) structure including high Ge concentration (i.e.…”

Section: Introductionmentioning

confidence: 99%

Process Effects on the Noise Performance of SiGe/Si Multi Quantum Well Thermistor

et al. 2019

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In this paper, the process effects of SiGe/Si multi quantum well (MQW) stack is presented in terms of its 1/f noise performance in an intrinsic thermal detector device. In particular, boron (B) doping in SiGe quantum wells and carbon (C) delta layer at SiGe/Si interfaces are analyzed by presenting the 1/f noise voltage power spectral densities. The results indicate that 1/f noise performance can be further improved by carbon delta layers while doping in SiGe quantum wells has no significant effect. Effects of the bias voltage and the pixel size of the thermistor are obtained very much similar to the expected trend. The overall achievements proves that the desired TCR and resistance values for high performance SiGe/Si MQW thermistor material can be achieved with a desired 1/f noise performance by the introduction of carbon delta layer at SiGe/Si interfaces and in-situ doping of the SiGe layers in the MQW stack.

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“…Recently, IHP has achieved a significant breakthrough in SiGe/Si MQW processing technology (9). The developed high quality of superlattice of Si1-xGex/Si MQW structure containing 50% Ge has been successfully processed and presented as a potential thermistor material with its high performance for uncooled microbolometer applications (10). Further enhancement on this intrinsic thermistor device is presented in (11) in order to reduce the high resistance of the Si1-xGex/Si MQWs including high Ge concentration.…”

Section: Introductionmentioning

confidence: 99%

(Invited) Si_1-xGe_x/Si MQW Based Uncooled Microbolometer Development and Integration into 130 nm BiCMOS Technology

Kaynak¹,

Yamamoto²,

Göritz³

et al. 2018

ECS Trans.

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In this paper, the recent progress on Si1-xGex/Si based high performance detector structures is presented. The process optimization of the detector by means of high TCR, low 1/f noise and appropriate resistance is summarized. The method of integrating the developed Si1-xGex/Si multi quantum well (MQW) detector structures into a 130 nm BiCMOS process is provided. The optimization studies required for the full integration of the suspended uncooled microbolometer device are presented.

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High Performance Thermistor Based on Si_1−xGe_x/Si Multi Quantum Wells

Cited by 9 publications

References 9 publications

A SiGe/Si Nanostructure with Graphene Absorbent for Long Wavelength Infrared Detection

A SiGe/Si Nanostructure with Graphene Absorbent for Long Wavelength Infrared Detection

Process Effects on the Noise Performance of SiGe/Si Multi Quantum Well Thermistor

(Invited) Si_1-xGe_x/Si MQW Based Uncooled Microbolometer Development and Integration into 130 nm BiCMOS Technology

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High Performance Thermistor Based on Si1−xGex/Si Multi Quantum Wells

Cited by 9 publications

References 9 publications

A SiGe/Si Nanostructure with Graphene Absorbent for Long Wavelength Infrared Detection

A SiGe/Si Nanostructure with Graphene Absorbent for Long Wavelength Infrared Detection

Process Effects on the Noise Performance of SiGe/Si Multi Quantum Well Thermistor

(Invited) Si1-xGex/Si MQW Based Uncooled Microbolometer Development and Integration into 130 nm BiCMOS Technology

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High Performance Thermistor Based on Si_1−xGe_x/Si Multi Quantum Wells

(Invited) Si_1-xGe_x/Si MQW Based Uncooled Microbolometer Development and Integration into 130 nm BiCMOS Technology