High-performance sub-10 nm monolayer Bi<sub>2</sub>O<sub>2</sub>Se transistors

Quhe, Ruge; Liu, Junchen; Wu, Jinxiong; Yang, Jie; Wang, Yangyang; Li, Qiuhui; Li, Tianran; Guo, Ying; Peng, Hailin; Lei, Ming; Lü, Jing

doi:10.1039/c8nr08852g

Cited by 201 publications

(197 citation statements)

References 47 publications

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“…In order to evaluate the performance of AsP FETs more intuitionally, we also extracted the energy‐delay product (EDP = PDP × τ) to compare with recently emerging 2D FETs in Figure , including phosphorene,33 arsenene,12 antimonene,12 MoS 2 ,22 and Bi 2 O 2 Se 22. EDP is a key figure‐of‐merit considering both performance (speed) and energy dissipation simultaneously, and it is vital to seek the minimum EDP for the optimum operational condition.…”

Section: Resultsmentioning

confidence: 99%

Anisotropic In‐Plane Ballistic Transport in Monolayer Black Arsenic‐Phosphorus FETs

Zhou

Zhang

Wang

et al. 2020

Adv Elect Materials

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The performance limits of monolayer arsenic‐phosphorus (AsP) field‐effect transistors (FETs) are explored by first‐principles simulations of ballistic transport in nanoscale devices. The monolayer AsP holds a direct bandgap of 0.92 eV with significantly anisotropic electronic properties. Transfer characteristics of n‐type and p‐type AsP FETs are thoroughly investigated by scaling channel length in the armchair and zigzag direction, respectively. The simulation results indicate that AsP FETs exhibit exceptional device characteristics, such as high on‐state current, short delay time, and low power consumption. Moreover, transfer characteristics demonstrate superior anisotropy on in‐plane electrical transport properties. In particular, in the zigzag direction, even if the channel length is scaled down to 4 nm, the device performance still can satisfy the International Technology Roadmap for Semiconductors high‐performance requirement. Finally, through benchmarking energy‐delay product against other typical 2D FETs, AsP FETs are revealed to be strongly competitive 2D FETs.

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Section: Resultsmentioning

confidence: 99%

Anisotropic In‐Plane Ballistic Transport in Monolayer Black Arsenic‐Phosphorus FETs

Zhou

Zhang

Wang

et al. 2020

Adv Elect Materials

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“…Oxychalcogenides, which can be regarded as mixing and bridging chalcogenides and oxides together, reactivate their research booms for the remarkable phenomena such as high carrier mobility, [9] thermoelectricity, [10][11][12] ferroelectricity, [13] and superconductivity. [2,9,13,[15][16][17][18][19][20][21][22][23] For example, the bulk Bi 2 O 2 Se crystals show an ultrahigh Hall mobility of ≈280 000 cm 2 V −1 s −1 at low temperature [9] and robust bandgap (immune to Se vacancies) after cleavage. [2,9,13,[15][16][17][18][19][20][21][22][23] For example, the bulk Bi 2 O 2 Se crystals show an ultrahigh Hall mobility of ≈280 000 cm 2 V −1 s −1 at low temperature [9] and robust bandgap (immune to Se vacancies) after cleavage.…”

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confidence: 99%

Molecular Beam Epitaxy and Electronic Structure of Atomically Thin Oxyselenide Films

et al. 2019

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over decades. Oxychalcogenides, which can be regarded as mixing and bridging chalcogenides and oxides together, reactivate their research booms for the remarkable phenomena such as high carrier mobility, [9] thermoelectricity, [10][11][12] ferroelectricity, [13] and superconductivity. [14] Bi 2 O 2 Se, a representative of oxychalcogenides family, emerged as an air-stable highmobility layered semiconductor, which holds promise for next-generation digital devices and optoelectronics. [2,9,13,[15][16][17][18][19][20][21][22][23] For example, the bulk Bi 2 O 2 Se crystals show an ultrahigh Hall mobility of ≈280 000 cm 2 V −1 s −1 at low temperature [9] and robust bandgap (immune to Se vacancies) after cleavage. [17] Nanoplates and thin films of Bi 2 O 2 Se were successfully prepared by chemical vapor deposition (CVD), [9,15,21,23] displaying excellent switching behavior of I on /I off and high Hall mobility (up to 450 cm 2 V −1 s −1 ) at room temperature. Outstanding optoelectronic properties were recently observed in CVD-grown Bi 2 O 2 Se nanoplates. [16,18,[23][24][25] The present research is mainly focused on the bulk crystals and few-layer or multiplayer samples due to the challenge to faithfully achieve the growth of atomically thin Bi 2 O 2 Se films. The atomically thin counterpart down to one-unit-cell (1-UC) Atomically thin oxychalcogenides have been attracting intensive attention for their fascinating fundamental properties and application prospects. Bi 2 O 2 Se, a representative of layered oxychalcogenides, has emerged as an air-stable high-mobility 2D semiconductor that holds great promise for next-generation electronics. The preparation and device fabrication of high-quality Bi 2 O 2 Se crystals down to a few atomic layers remains a great challenge at present. Here, molecular beam epitaxy (MBE) of atomically thin Bi 2 O 2 Se films down to monolayer on SrTiO 3 (001) substrate is achieved by co-evaporating Bi andSe precursors in oxygen atmosphere. The interfacial atomic arrangements of MBE-grown Bi 2 O 2 Se/SrTiO 3 are unambiguously revealed, showing an atomically sharp interface and atom-to-atom alignment. Importantly, the electronic band structures of one-unit-cell (1-UC) thick Bi 2 O 2 Se films are observed by angle-resolved photoemission spectroscopy (ARPES), showing low effective mass of ≈0.15 m 0 and bandgap of ≈0.8 eV. These results may be constructive to the synthesis of other 2D oxychalcogenides and investigation of novel physical properties. Ultrathin FilmsThanks to their rich physics and fascinating application prospects, atomically thin metal oxides/chalcogenides (sulfide, selenide, or telluride) and their heterostructures, such as transition metal dichalcogenides (TMDs), [1,2] superconducting β-phase FeSe, [3,4] topological insulator (Bi 2 Se 3 , Bi 2 Te 3 ), [5,6] and LaAlO 3 /SrTiO 3 , [7,8] have been attracting tremendous interest

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“…The hollow and double-walled structure of the nanotubes increased their specific surface area, number of active sites, and reflection, thus improving their solar utilization [55][56][57][58] . The modification with 2D MoS 2 lamellae also improved the specific surface area and number of edge S atoms (generated during the sulfuration process) of the nanotubes [51][52][53] . All these factors improved the photocatalytic HER performance of the nanotubes.…”

Section: Resultsmentioning

confidence: 93%

“…Yuan et al prepared MoS 2 /g-C 3 N 4 photocatalysts with remarkable photocatalytic HER activity [50] . Moreover, because of the presence of the Mo-S bond, MoS 2 can be easily transformed into 2D ultrathin lamellae, which increases its specific surface area and the number of edge S atoms, thereby, increasing the number of HER active sites and shortening the electron transferring route to improve the charge carrier separation [51][52][53] .…”

Section: Introductionmentioning

confidence: 99%

Two-dimensional ultrathin MoS2-modified black Ti3+–TiO2 nanotubes for enhanced photocatalytic water splitting hydrogen production

Pan

Liu

et al. 2020

Journal of Energy Chemistry

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High-performance sub-10 nm monolayer Bi₂O₂Se transistors

Abstract: Monolayer Bi2O2Se is a promising post-silicon-era semiconductor candidate because of its simultaneous excellent device performance and high ambient stability.

Cited by 201 publications

References 47 publications

Anisotropic In‐Plane Ballistic Transport in Monolayer Black Arsenic‐Phosphorus FETs

Anisotropic In‐Plane Ballistic Transport in Monolayer Black Arsenic‐Phosphorus FETs

Molecular Beam Epitaxy and Electronic Structure of Atomically Thin Oxyselenide Films

Two-dimensional ultrathin MoS2-modified black Ti3+–TiO2 nanotubes for enhanced photocatalytic water splitting hydrogen production

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High-performance sub-10 nm monolayer Bi2O2Se transistors

Abstract: Monolayer Bi2O2Se is a promising post-silicon-era semiconductor candidate because of its simultaneous excellent device performance and high ambient stability.

Cited by 201 publications

References 47 publications

Anisotropic In‐Plane Ballistic Transport in Monolayer Black Arsenic‐Phosphorus FETs

Anisotropic In‐Plane Ballistic Transport in Monolayer Black Arsenic‐Phosphorus FETs

Molecular Beam Epitaxy and Electronic Structure of Atomically Thin Oxyselenide Films

Two-dimensional ultrathin MoS2-modified black Ti3+–TiO2 nanotubes for enhanced photocatalytic water splitting hydrogen production

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High-performance sub-10 nm monolayer Bi₂O₂Se transistors