High Performance Stacked-FETs in 0.25 µm GaN Technology for S-band Power Amplifiers

Bent, G. van der; Hek, Peter de; Knight, Rob; Vliet, F.E. van

doi:10.23919/eumc54642.2022.9924448

2022 52nd European Microwave Conference (EuMC) 2022

DOI: 10.23919/eumc54642.2022.9924448

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High Performance Stacked-FETs in 0.25 µm GaN Technology for S-band Power Amplifiers

G. van der Bent¹,

Peter de Hek²,

Rob Knight³

et al.

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Analysis of DC negative feedback mechanism in stacked power amplifiers

He,

Fang,

Zhong

et al. 2023

IEICE Electron. Express

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Transistor stacking is a promising technique to increase the working voltage and output power of power amplifiers (PAs). A DC negative feedback mechanism in stacked PAs is analyzed and verified through measurement in this paper. This negative feedback mechanism ensures the stability of stacked PAs at DC conditions. Based on the analysis of this mechanism, the DC biasing procedure of stacked PAs is also analyzed in this paper. Finally, an experiment is performed to verify our analysis. The results of this paper prove the feasibility and stability of the stacked PA.

show abstract

Analysis of DC negative feedback mechanism in stacked power amplifiers

He,

Fang,

Zhong

et al. 2023

IEICE Electron. Express

View full text Add to dashboard Cite

show abstract

High-Gain High-Power-Density Stacked GaN HEMTs Operating at 140 V with Reconfigurable Inter-Stage Matching Circuit

He,

Zhong,

Fang

et al. 2024

IEICE Electron. Express

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High Performance Stacked-FETs in 0.25 µm GaN Technology for S-band Power Amplifiers

Cited by 2 publications

References 0 publications

Analysis of DC negative feedback mechanism in stacked power amplifiers

Analysis of DC negative feedback mechanism in stacked power amplifiers

High-Gain High-Power-Density Stacked GaN HEMTs Operating at 140 V with Reconfigurable Inter-Stage Matching Circuit

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