High-Performance Solution-Processed ZrInZnO Thin-Film Transistors

Characterization of novel BaZnSnO thin films by solution process and applications in thin film transistors

“…Ba has a considerably lower SEP (À2.90 V) than Zn (À0.76 V) and Sn (À0.13 V). Moreover, the band gap of BaO is larger (4.8 eV) than ZnO (3.3 eV) and SnO 2 (3.6 eV) [11,12]. Therefore, incorporation of Ba into ZnSnO is expected to reduce the number of oxygen vacancies and increase the optical band gap.…”

Origin of the improved stability under negative gate-bias illumination stress in various sputtering power fabricated ZnSnO TFTs

“…Amorphous oxide semiconductors (AOS) thin films are promising next generation materials for use as active channel layers to replace conventional amorphous and [1][2][3][4][5][6][7][8][9] . Among this AOS material, IGZO TFTs have high field-effect mobility, a small subthreshold swing, good uniformity attributed to the amorphous structure, a low off current, good stability under electrical stress, and can be processed at low temperatures.…”

Hybrid Cluster Precursors of the LaZrO Insulator for Transistors: Properties of High-Temperature-Processed Films and Structures of Solutions, Gels and Solids

“…An amorphous structure is preferred for a sharp insulator/channel interface and for eliminating leakage through crystal boundaries. The combination of these two oxides led to the insulating LaZrO, which is a stable amorphous oxide (refs 18, 19; also see Figure S1 for a transmission electron microscopy image and an electron diffraction pattern) with a dielectric constant in the range 20–25. LaZrO has shown some excellent properties in our all-oxide TFTs171819, but leakage needs to be further suppressed and a processing temperature that is compatible with plastic substrates is highly desirable.…”

“…The combination of these two oxides led to the insulating LaZrO, which is a stable amorphous oxide (refs 18, 19; also see Figure S1 for a transmission electron microscopy image and an electron diffraction pattern) with a dielectric constant in the range 20–25. LaZrO has shown some excellent properties in our all-oxide TFTs171819, but leakage needs to be further suppressed and a processing temperature that is compatible with plastic substrates is highly desirable. In another paper20, we will show that the light absorption and decomposition properties of LaZrO precursor solutions were significantly improved by a solvothermal treatment, leading to low-temperature (200 °C) decomposition and densification under ultraviolet (UV) light for TFT fabrication.…”