High-Performance Silicon Photonics Using Heterogeneous Integration

Xiang, Chao; Jin, Warren; Huang, Duanni; Tran, Minh A.; Guo, Joel; Wan, Yating; Wang, Xie; Kurczveil, Géza; Netherton, Andrew; Liang, Di; Rong, Haisheng; Bowers, John E.

doi:10.1109/jstqe.2021.3126124

Cited by 85 publications

(40 citation statements)

References 108 publications

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“…In silicon photonics, photodetectors are built from Ge grown on the Si substrate. The optical sources are either heterogeneously attached InP DFB lasers [3] or DFB lasers processed on the silicon platform, from heterogeneously attached InP epitaxial material [4,9]. Although there are multiple approaches to package integration [6,10], the method we have described here uses the silicon photonics device as an interposer, with TSV's.…”

Section: Introductionmentioning

confidence: 99%

2.5D Heterogeneous Integration for Silicon Photonics Engines in Optical Transceivers

Nagarajan

Liu

Coccioli

et al. 2022

IEEE J. Select. Topics Quantum Electron.

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We present our work in the area of heterogeneous optical integration, where separately manufactured electronic components are assembled on to an active silicon photonics interposer to form a higher-level component. This process allows for the integration of components independently designed and optimized from several different technology and foundry platforms onto a common interposer. Heterogeneous integration is essential for manufacturing higher speed and performance components. Higher levels of integration also allow for closer placement of devices which minimizes the parasitic power consumed to compensate for the frequency dependent losses in the interconnect traces.

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Section: Introductionmentioning

confidence: 99%

2.5D Heterogeneous Integration for Silicon Photonics Engines in Optical Transceivers

Nagarajan

Liu

Coccioli

et al. 2022

IEEE J. Select. Topics Quantum Electron.

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“…Recent advances in hybrid integration of III–V semiconductors with silicon and silicon nitride rely on epitaxial approaches and demonstrate promising results. For more in-depth coverage of this topic, we refer the reader to the recent review articles [ 191 , 192 ].…”

Section: Optical Properties Of Algaasmentioning

confidence: 99%

AlGaAs Nonlinear Integrated Photonics

et al. 2022

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Practical applications implementing integrated photonic circuits can benefit from nonlinear optical functionalities such as wavelength conversion, all-optical signal processing, and frequency-comb generation, among others. Numerous nonlinear waveguide platforms have been explored for these roles; the group of materials capable of combining both passive and active functionalities monolithically on the same chip is III–V semiconductors. AlGaAs is the most studied III–V nonlinear waveguide platform to date; it exhibits both second- and third-order optical nonlinearity and can be used for a wide range of integrated nonlinear photonic devices. In this review, we conduct an extensive overview of various AlGaAs nonlinear waveguide platforms and geometries, their nonlinear optical performances, as well as the measured values and wavelength dependencies of their effective nonlinear coefficients. Furthermore, we highlight the state-of-the-art achievements in the field, among which are efficient tunable wavelength converters, on-chip frequency-comb generation, and ultra-broadband on-chip supercontinuum generation. Moreover, we overview the applications in development where AlGaAs nonlinear functional devices aspire to be the game-changers. Among such applications, there is all-optical signal processing in optical communication networks and integrated quantum photonic circuits.

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“…This vision combines active (lasers, modulators, and detectors), passive (filters and off-chip coupling), and nonlinear elements (frequency combs and frequency converters) while maintaining small overall volume (10)(11)(12)(13)(14)(15)(16)(17). In addition, heterogeneous silicon photonics offers a path toward realizing ultrastable, high-precision laser performance in a compact and mobile platform and has demonstrated tremendous scalability with 300-mm wafer-scale fabrication of photonic transceivers at terabits per second for data center applications (18)(19)(20). Silicon nitride (Si 3 N 4 ) photonics adds even more functionality, taking advantage of complementary metal-oxide semiconductor (CMOS) compatibility, wide bandgap, and low-loss integrated waveguides (21,22).…”

Section: Introductionmentioning

confidence: 99%

Chip-based laser with 1-hertz integrated linewidth

et al. 2022

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Lasers with hertz linewidths at time scales of seconds are critical for metrology, timekeeping, and manipulation of quantum systems. Such frequency stability relies on bulk-optic lasers and reference cavities, where increased size is leveraged to reduce noise but with the trade-off of cost, hand assembly, and limited applications. Alternatively, planar waveguide–based lasers enjoy complementary metal-oxide semiconductor scalability yet are fundamentally limited from achieving hertz linewidths by stochastic noise and thermal sensitivity. In this work, we demonstrate a laser system with a 1-s linewidth of 1.1 Hz and fractional frequency instability below 10 −14 to 1 s. This low-noise performance leverages integrated lasers together with an 8-ml vacuum-gap cavity using microfabricated mirrors. All critical components are lithographically defined on planar substrates, holding potential for high-volume manufacturing. Consequently, this work provides an important advance toward compact lasers with hertz linewidths for portable optical clocks, radio frequency photonic oscillators, and related communication and navigation systems.

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High-Performance Silicon Photonics Using Heterogeneous Integration

Cited by 85 publications

References 108 publications

2.5D Heterogeneous Integration for Silicon Photonics Engines in Optical Transceivers

2.5D Heterogeneous Integration for Silicon Photonics Engines in Optical Transceivers

AlGaAs Nonlinear Integrated Photonics

Chip-based laser with 1-hertz integrated linewidth

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