2.5D Heterogeneous Integration for Silicon Photonics Engines in Optical Transceivers

Abstract

We present our work in the area of heterogeneous optical integration, where separately manufactured electronic components are assembled on to an active silicon photonics interposer to form a higher-level component. This process allows for the integration of components independently designed and optimized from several different technology and foundry platforms onto a common interposer. Heterogeneous integration is essential for manufacturing higher speed and performance components. Higher levels of integration also allow for closer placement of devices which minimizes the parasitic power consumed to compensate for the frequency dependent losses in the interconnect traces.

Thermal Characterisation of Hybrid, Flip-Chip InP-Si DFB Lasers

“…The laser-length and thermal-resistance product of this work was 2.6 (K-m)/W. In Figure 10 , this value is compared with other reported values in the literature [ 7 , 11 , 19 , 20 , 21 ]. The normalised thermal resistance lay in the range of 1.5–4.7 (K-m)/W, placing the laser studied in this work inside the expected range.…”

“… Thermal resistance from experiments, model, and values from literature. R. Nagarajan (2022) [ 21 ] and B. Song (2016) [ 20 ] report results on flip-chip integrated lasers.…”

Imec silicon photonics platforms: performance overview and roadmap

“…The 3D-stacking concepts combine Electronic IC (EIC) and PIC with high connection densities and low parasitic power consumption at high frequency [21,22]. The integration of TSV's in the silicon photonics platform enables PIC face-up assembly flows, as demonstrated in [23,24]. Although this demonstration is already several years old, there remain outstanding challenges for such functionality to be broadly adopted: (1) thin die warpage; (2) edge coupler compatibility; (3) assembly supply chain.…”

GaAs nano-ridge laser diodes fully fabricated in a 300 mm CMOS pilot line

“…However, the lack of native, low-cost coherent light sources is a major roadblock for ubiquitous adoption of the technology, especially for future high-volume cost-sensitive applications, such as chip-to-chip optical interconnects in machine-learning systems [17], bre-to-the-X applications [18], or optical sensors for consumer devices [19,20]. In many of today's datacom products, the light sources are manufactured and tested separately on their native III-V substrates, and subsequently hybrid integrated on the silicon photonics wafers in the form of micro-assembled laser packages [21] or through high-precision ip-chip assembly [7,8,9]. Owing to the sequential nature and high-precision requirement of such assembly processes, the manufacturing throughput of these integration solutions may not scale to meet the aggressive density, cost and volume targets for future products.…”

“…However, the lack of highly scalable, native CMOS-integrated light sources is one of the main factors hampering its widespread adoption. Despite signi cant progress in hybrid and heterogeneous integration of III-V light sources on silicon [7,8,9,10,11,12], monolithic integration by direct epitaxial growth of III-V materials remains the pinnacle in realizing cost-effective on-chip light sources. Here, we report the rst electrically driven GaAs-based multiquantum-well laser diodes fully fabricated on 300 mm Si wafers in a CMOS pilot manufacturing line.…”