2014 IEEE International Electron Devices Meeting 2014
DOI: 10.1109/iedm.2014.7047027
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High performance silicon imaging arrays for cosmology, planetary sciences, & other applications

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Cited by 3 publications
(3 citation statements)
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“…3.7. 19,39 Fully fabricated wafers are bonded to a handle wafer and back-thinned to the epi-layer. The wafer then undergoes several surface preparation steps to ready the surface for 2D doping and optical coating processes.…”
Section: D Doping and End-to-end Processing Of Different Device Archi...mentioning
confidence: 99%
“…3.7. 19,39 Fully fabricated wafers are bonded to a handle wafer and back-thinned to the epi-layer. The wafer then undergoes several surface preparation steps to ready the surface for 2D doping and optical coating processes.…”
Section: D Doping and End-to-end Processing Of Different Device Archi...mentioning
confidence: 99%
“…However, planar SPADs have worse flexibility because of the lack of silicon islands. Passivation technology [29] to filter out the defects around the trenches needs to be investigated in future work. …”
Section: Comparison Between Flexible Trench-isolated Spad and Planar mentioning
confidence: 99%
“…Our post-fabrication process flow has been described elsewhere. 10 Briefly, device wafers are bonded front-side down to a handle wafer (Novati Technologies, Inc.); this handle wafer serves to protect the VLSI fabricated circuitry and pixel structure, and also provides support for the device wafer during and after subsequent thinning steps. The device wafers are then thinned to remove the bulk of the detector substrate by grinding, chemical mechanical polishing, and chemical etching.…”
Section: Two-dimensional Dopingmentioning
confidence: 99%