High performance SiGe:C HBTs using atomic layer base doping

Tillack, Bernd; Yamamoto, Yuji; Knoll, D.; Heinemann, B.; Schley, P.; Senapati, B.; Krüger, D.

doi:10.1016/j.apsusc.2003.08.028

Cited by 12 publications

(15 citation statements)

References 5 publications

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“…B atomic amount incorporated into the SiGe epitaxial films (B dose) increases with increasing B 2 H 6 partial pressure without saturation, and the B dose of several monolayers was obtained. 14) It also implies that B adsorption occurs at Si, Ge, and B surface sites. This is consistent with the fact that B tends to form clusters in Si 1Àx Ge x at high B concentration.…”

Section: Boron Atomic Layer Doping In Sige Epitaxial Growthmentioning

confidence: 99%

“…Based on the investigation of surface reaction processes, the concept of atomic layer process control 3,6,7,[9][10][11] has been demonstrated for high-performance Si 0:65 Ge 0:35 -channel p-type MOS fieldeffect transistors (pMOSFETs) with a 0.12 mm gate length by utilizing in-situ impurity-doped Si 1Àx Ge x selective epitaxy on the source/drain regions at 550 C, 12) for ultrathin P barriers in infrared SiGe/Si heterojunction internal photoemission detectors, 13) and for B and P base doping in npn and pnp hetero-bipolar transistors (HBTs). [14][15][16] In this review, we describe ultraclean low-temperature low-pressure CVD processing using SiH 4 and GeH 4 gases. The in-situ doped Si 1Àx Ge x epitaxial growth on the (100) surface in a SiH 4 -GeH 4 -dopant (PH 3 , or B 2 H 6 or SiH 3 CH 3 )-H 2 gas mixture and the self-limited reactions of hydride gases (SiH 4 , GeH 4 , NH 3 , PH 3 , CH 4 , and SiH 3 CH 3 ) on Si(100) and Ge(100) for atomic-order growth are reviewed based on the Langmuir-type adsorption and reaction scheme.…”

Section: Introductionmentioning

confidence: 99%

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Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition

Murota

Sakuraba

Tillack

2006

jjap

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112

153

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One of the main requirements for Si-based ultrasmall devices is atomic-order control of process technology. Here we show the concept of atomically controlled processing for group IV semiconductors based on atomic-order surface reaction control. By ultraclean low-pressure chemical vapor deposition using SiH 4 and GeH 4 gases, high-quality low-temperature epitaxial growth of Si, Ge, and Si 1Àx Ge x with atomically flat surfaces and interfaces on Si (100) is achieved, and atomic-order surface reaction processes on group IV semiconductor surface are formulated based on a Langmuir-type surface adsorption and reaction scheme. In in-situ doped Si 1Àx Ge x epitaxial growth on the (100) surface in a SiH 4 -GeH 4 -dopant (PH 3 , or B 2 H 6 or SiH 3 CH 3 )-H 2 gas mixture, the deposition rate, the Ge fraction and the dopant concentration are explained quantitatively assuming that the reactant gas adsorption/reaction depends on the surface site material and that the dopant incorporation in the grown film is determined by Henry's law. Self-limiting formation of 1-3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases on Si(100) and Ge (100) is generalized based on the Langmuir-type model. Si or SiGe epitaxial growth over N, P or B layer already-formed on Si(100) or SiGe(100) surface is achieved. Furthermore, the capability of atomically controlled processing for advanced devices is demonstrated. These results open the way to atomically controlled technology for ultralarge-scale integrations.

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Section: Boron Atomic Layer Doping In Sige Epitaxial Growthmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition

Murota

Sakuraba

Tillack

2006

jjap

Self Cite

112

153

View full text Add to dashboard Cite

show abstract

“…For P atomic layer doping of SiGe selflimitation of the process has been observed for temperatures between 200-550°C allowing very precise dopant dose and location control. B and P atomic layer doping has been demonstrated to be suitable for base doping of npn and pnp Heterojunction Bipolar Transistors (14)(15)(16)18). These results show the capability of the atomic layer doping approach for future devices with critical requirements of dopant dose and location control.…”

Section: Resultsmentioning

confidence: 87%

“…Very low process temperatures (even room temperature) have been shown for epitaxy (Si, Ge) and doping (12)(13)(14)(15)(16)(17). In the present paper results of B and P atomic layer doping of Si, Ge and SiGe are reviewed and discussed focussing on the control of the surface adsorption by changing temperatures and partial pressures.…”

Section: Introductionmentioning

confidence: 95%

(Invited) Atomic Control of Doping during Si Based Epitaxial Layer Growth Processes

2010

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Atomic-level processing based on surface reaction control is used for B and P doping during Si, SiGe or Ge epitaxy. The concept of atomic layer processing is base on the separation of adsorption of the dopant gases from the layer growth. By this way the doping process is controlled by surface adsorption / desorption of dopant gas mainly. For B atomic layer doping of SiGe and pure Ge using B 2 H 6 , high doping levels and steep doping profiles have been reached. The process was found to be self-limited at ~100°C indicating preferred adsorption of B 2 H 6 on Si and Ge sites and suppression of B cluster formation. For P atomic layer doping on Si and SiGe self-limitation of the process has been observed for temperatures between 200-600°C allowing very precise dopant dose and location control. IntroductionSilicon based integrated circuits technology is reaching the nanometer scale region with lateral and vertical structures close to atomic dimensions. Moreover emerging research devices and technologies are under investigation to extend the CMOS technology further on or to evaluate solutions for beyond Si CMOS technologies like introducing Ge or III-V material channel replacement. As well for further scaling as for novel nanoelectronic device concepts advanced processing technologies at atomic level are requested. Very low temperature processing is required allowing creation and control of vertical and lateral structures at atomic level and the integration of new materials for emerging device concepts.Here we discuss the concept of atomic-level processing for doping of Si, SiGe and Ge based on atomic-order surface reaction control. The main idea of the atomic layer approach is the idea to control the process by surface reactions at very low temperatures (even at room temperature). By processing at low temperature the adsorption of reactant gases at the surface can be separated from the reaction process. By this way the process is controlled by the surface adsorption equilibrium only. The main concept of surface reaction limited processing is described in Figure 1. In a first step the surface of the wafer is exposed to the reacting gases at low temperature. According to the experimental ECS Transactions, 33 (6) 603-614 (2010) 10.1149/1.3487591 © The Electrochemical Society 603 ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 169.230.243.252 Downloaded on 2014-12-03 to IPconditions used (e.g. exposure temperature, partial pressures of the reacting gas) adsorption / desorption of reacting gases and surface reaction are taking place. Then there are two possible options. If the adsorbed species are more or less covering the surface, this means all surface sites are occupied. Further adsorption is blocked resulting in selflimitation of the process. Self limited processing at low temperature is very beneficial for reliable and robust process technology.In the second case, the reacting gas is adsorbed on already occupied sites resulting in further gr...

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“…For P atomic layer doping of SiGe self-limitation of the process has been observed for temperatures between 200-550°C allowing very precise dopant dose and location control. B and P atomic layer doping has been demonstrated to be suitable for base doping of npn and pnp Heterojunction Bipolar Transistors (14)(15)(16)18). These results show the capability of the atomic layer doping approach for future devices with critical requirements of dopant dose and location control.…”

Section: Resultsmentioning

confidence: 99%

Atomic Layer Doping for Future Si Based Devices

Tillack¹,

Yamamoto²

2009

ECS Trans.

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The concept of atomic-level processing based on atomic-order surface reaction control is discussed. The main idea of the atomic layer approach is the control of the process by surface reactions at very low temperatures (even at room temperature). Results of B and P atomic layer doping of Si, Ge and SiGe are reviewed and discussed focussing on the control of the surface adsorption by changing temperatures and partial pressures of the dopant gases. For B atomic layer doping of SiGe and pure Ge using B 2 H 6 , high doping levels and steep doping profiles have been reached. The process was found to be self-limited at ~100°C indicating preferred adsorption of B 2 H 6 on Si and Ge sites and suppression of B cluster formation. In the case of B atomic layer doping of Si it is shown that the technique can be used for the selective deposition of polycrystalline Si. For P atomic layer doping of SiGe selflimitation of the process has been observed for temperatures between 200-550°C allowing very precise dopant dose and location control. IntroductionFuture silicon based integrated circuits technology is targeting on reduced transistor dimensions, increased transistor counts and increased operating frequencies. By reaching the nanometer scale region lateral and vertical structures have to be processed which are close to atomic dimensions. Moreover emerging research devices and technologies are under investigation to extend the CMOS technology further on or to evaluate solutions for beyond Si CMOS technologies like introducing Ge or III-V material channel replacement (1). According to the ITRS the alternative "More Than Moore" approach is targeting on diversification by combining different technologies based on a reasonable scaling level. As well for the further scaling (ITRS "More Moore" approach) as for the "More Than Moore" approach novel concepts for processing technologies are requested. For the formation of nanometer scale structures atomic-order control of future process technology for device fabrication needs to be developed. Very low temperature processing is required allowing creation and control of vertical and lateral structures at atomic level and the integration of new materials for emerging device concepts.Here we discuss the concept of atomic-level processing for doping of Si, SiGe and Ge based on atomic-order surface reaction control. The main idea of the atomic layer approach is the idea to control the process by surface reactions at very low temperatures 121 ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 137.99.43.51 Downloaded on 2015-06-24 to IP (even at room temperature). By processing at low temperature the adsorption of reactant gases at the surface can be separated from the reaction process. By this way the process is controlled by the surface adsorption equilibrium only. The atomic layer processing approach has been demonstrated for the adsorption of different hydride gases on Si (100) and Ge (100) (2-11). Very low process ...

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High performance SiGe:C HBTs using atomic layer base doping

Cited by 12 publications

References 5 publications

Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition

Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition

(Invited) Atomic Control of Doping during Si Based Epitaxial Layer Growth Processes

Atomic Layer Doping for Future Si Based Devices

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