2011
DOI: 10.1039/c0ee00549e
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High-performance Si microwire photovoltaics

Abstract: Crystalline Si wires, grown by the vapor-liquid-solid (VLS) process, have emerged as promising candidate materials for lowcost, thin-film photovoltaics. Here, we demonstrate VLS-grown Si microwires that have suitable electrical properties for high-performance photovoltaic applications, including long minority-carrier diffusion lengths (L n [ 30 mm) and low surface recombination velocities (S ( 70 cm$s À1). Single-wire radial p-n junction solar cells were fabricated with amorphous silicon and silicon nitride su… Show more

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Cited by 196 publications
(184 citation statements)
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“…This discrepancy between the simulations and the observations can likely be attributed to a non-uniform current density distribution along the length of the microwire array, as well as to the long minority-carrier diffusion length of the p-Si microwire arrays. A long minority-carrier diffusion length (>30 μm), as has been observed in similar p-Si microwire arrays (26,27), will allow lateral mobility of the photogenerated charge carriers along the wire length, and thus will relax the mass transport limitations relative to those indicated by simulations, which assumed a constant flux of photogenerated charge carriers along the length of the wires in the array.…”
Section: Discussionmentioning
confidence: 97%
See 1 more Smart Citation
“…This discrepancy between the simulations and the observations can likely be attributed to a non-uniform current density distribution along the length of the microwire array, as well as to the long minority-carrier diffusion length of the p-Si microwire arrays. A long minority-carrier diffusion length (>30 μm), as has been observed in similar p-Si microwire arrays (26,27), will allow lateral mobility of the photogenerated charge carriers along the wire length, and thus will relax the mass transport limitations relative to those indicated by simulations, which assumed a constant flux of photogenerated charge carriers along the length of the wires in the array.…”
Section: Discussionmentioning
confidence: 97%
“…The observed J sc can be further improved by light trapping techniques (25)(26)(27)(28). Using an antireflective coating, a Ag back-reflector and embedded light-scatterers, these wire-array substrates have exhibited up to 96% peak absorption and have been shown to absorb up to 85% of day-integrated, above-bandgap direct-beam sunlight (25).…”
Section: Discussionmentioning
confidence: 99%
“…These samples were then spun at 1000 RPM for 30 s and cured at 150 °C for 30 min to produce a 10-20 μm thick PDMS layer selectively at the base of the wire array. 6 After a ~ 2 s etch in a 1:1 mixture of 1.0 M tetrabutylammonium fluoride in tetrahydrofuran (SigmaAldrich) and dimethylformamide (referred to as 'PDMS etch') and a H 2 O rinse, these partially in-filled arrays were immersed for 5 min in BHF to remove the exposed diffusion-barrier oxide.…”
Section: S2mentioning
confidence: 99%
“…[1][2][3][4][5][6][7][8][9][10][11][12][13][14][15][16] For example, the optical properties of arrays of nano-and microscale wires have been exploited for enhanced light absorption in photovoltaic devices, [16][17][18][19] however, the ability to substantially manipulate absorption in individual nanoscale structures has not been well established. In order to quantify optical resonances supported in individual NWs, scattering [20][21][22] and absorption cross-sections 5,6,11,[23][24][25][26] have been measured or calculated.…”
mentioning
confidence: 99%
“…6 By comparison, EQE values of ~0.15 have been reported for microscale devices based on Al-Si Schottky junctions 23 and values of ~1.1 for devices with coaxial p-n junctions that included a back-side reflector. 11 Several reports of relative EQE values have been reported for Si and Ge nanowire devices acting as photodetectors. 5,24,25 Our integrated approach to understanding the role of morphology on light absorption in individual p/i/n Si NWs is illustrated in Figure 1.…”
mentioning
confidence: 99%