High‐Performance Room‐Temperature Extended‐Wavelength InAs‐Based Middle‐Wavelength Infrared Photodetector

Abstract

Herein, a high-performance room-temperature extended-wavelength InAs-based barrier-type photodetector that operates in the 1.5-3.5 μm wavelength range is presented. The experimental results show that the uncooled photodetector exhibits a peak responsivity of 1.47 A W À1 at 3 μm and a peak detectivity as high as 1.6 Â 10 10 cm Hz 1/2 W À1 at zero bias, which is 3-10 times higher than that of available commercial InAs photodetectors. The external quantum efficiency at the peak responsivity is %63%. The nature of the detector's extended spectral response is investigated using numerical computation analyses, which indicate that such improvement is primarily contributed by the InAsSbP window layer.

Low Dark Current Operation in InAs/GaAs(111)A Infrared Photodetectors: Role of Misfit Dislocations at the Interface

“…These detectivity values (at 77 and 294 K) are one or two orders of magnitude lower than those of the commercial InAs-based photodetector (Hamamatsu P7163) or state-of-art detectors, shown in ref (both are grown on InAs substrates).…”

“…Avoiding highly toxic elements such as Pb, Hg, and Cd, InAs is a promising material for detecting the wavelength range. While InAs-based p - i - n or nBn devices have been realized and commercialized already, they are normally grown on InAs or GaSb substrates, ,− which are usually expensive, and large wafers are not available. Therefore, it is desired to develop InAs-based detectors on versatile GaAs or InP substrates. − Various metamorphic growth techniques have been attempted for relaxing the lattice mismatch between InAs and GaAs (7%) or InP (3%) and reducing the threading dislocation (TD) density in the InAs to form such devices.…”

Initial stage of InSb heteroepitaxial growth on GaAs (111)A: effect of thin InAs interlayers

“…As the examples, Hall sensors, IR-photosensors, and IR LEDs have been developed and commercialized. [1][2][3][4][5][6][7] The wafers of InAs, GaSb, and InSb are normally very expensive and large-size wafers are not available. In addition, the narrow-gap semiconductor substrates can be a source of parallel conduction when used as substrates for lateral conductive devices.…”

“…On the standard GaAs (100) substrates, several techniques have been developed to improve the quality, such as anion exchange (Sb soaking) [12][13][14] and/or two-step growth (temperature variation). 7,[15][16][17][18] It has been reported that most of the dislocations induced by the lattice mismatch could be confined at the interface of InSb/GaAs by utilizing these growth technique, 16) and that high mobility characteristics have been realized in relatively thick InSb layers grown on GaAs(100). 8,15,18,19) However, three-dimensional islands are often formed at the initial stage of the InSb growth, which degrade the structural and electrical properties of thinner InSb films.…”

Низкочастотные шумы и сопротивление фотодиодов с незащищенной поверхностью на основе InAsSbP/InAs в атмосфере паров этанола

“…В связи с этим разработки методов пассивации поверхности и защитных покрытий для ФД на основе InAs и близких к нему по составу полупроводников и полупроводниковых гетероструктур являются по-прежнему актуальными [5,7]. Альтернативным (но не исключающим отмеченное выше) способом борьбы с поверхностными токами (токами утечек) в фоточувствительных структурах с активной областью из InAs является создание гетероструктур, содержащих дополнительные, " блокирующие" слои с большей, чем у InAs, шириной запрещенной зоны, например слои AlAsSb [8] или InAsSbP [9][10][11][12][13].…”