High-performance quantum ring detector for the 1–3 terahertz range

Bhowmick, Sishir; Huang, Guo‐Shing; Guo, Wei; Lee, C. S.; Bhattacharya, P.; Ariyawansa, G.; Perera, A. G. U.

doi:10.1063/1.3447364

Cited by 48 publications

(24 citation statements)

References 15 publications

(11 reference statements)

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“…Confinement in these nanostructures is stronger than that in dots because of the altered shape. It is found that the quantum ring intersublevel detectors (QRIDs) exhibit very low dark current and strong response in the 1-3 THz range, with the peak response measured at 1.82 THz (165 μm) in the temperature range of 5-10 K. This detection peak is characterized by a peak responsivity of 25 A/W and specific detectivity of 1×10 16 Jones [298]. THz detector response can be enhanced by surface plasmon effects [299][300][301].…”

Section: Novel Thz Detectorsmentioning

confidence: 98%

“…The detector exhibits broad detection bandwidth ranging from microwaves up to tera− hertz frequencies (between 10 GHz and 0.8 THz) with nearly constant voltage sensitivity of around 0.3 V/W. Detection in THz region has been recently demonstrated using quantum rings (QRs) [297,298] growth annealing. Confinement in these nanostructures is stronger than that in dots because of the altered shape.…”

Section: Novel Thz Detectorsmentioning

confidence: 99%

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Terahertz detectors and focal plane arrays

Rogalski

Сизов

2011

Opto-Electronics Review

318

225

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Terahertz (THz) technology is one of emerging technologies that will change our life. A lot of attractive applications in security, medicine, biology, astronomy, and non-destructive materials testing have been demonstrated already. However, the realization of THz emitters and receivers is a challenge because the frequencies are too high for conventional electronics and the photon energies are too small for classical optics. As a result, THz radiation is resistant to the techniques commonly employed in these well established neighbouring bands.In the paper, issues associated with the development and exploitation of THz radiation detectors and focal plane arrays are discussed. Historical impressive progress in THz detector sensitivity in a period of more than half century is analyzed. More attention is put on the basic physical phenomena and the recent progress in both direct and heterodyne detectors. After short description of general classification of THz detectors, more details concern Schottky barrier diodes, pair braking detectors, hot electron mixers and field-effect transistor detectors, where links between THz devices and modern technologies such as micromachining are underlined. Also, the operational conditions of THz detectors and their upper performance limits are reviewed. Finally, recent advances in novel nanoelectronic materials and technologies are described. It is expected that applications of nanoscale materials and devices will open the door for further performance improvement in THz detectors.

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Section: Novel Thz Detectorsmentioning

confidence: 98%

Section: Novel Thz Detectorsmentioning

confidence: 99%

Terahertz detectors and focal plane arrays

Rogalski

Сизов

2011

Opto-Electronics Review

318

225

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“…Due to lower size of quantum rings in comparison with QDs, ground state energy is higher and it is less spacing between ground state and higher levels, hence the longer waves can be absorbed Li and Xia 2001). THz detection in the 3-100 THz with peak responsivity of 127 mA/W at 23 lm and detection of THz range with peak responsivity of 25 A/W at 1.82 THz at 5.2 K are some of experimental studies carried out regarding quantum ring intersubband photodetector (QRIP) (Dai et al 2008b;Bhowmick et al 2010). Also, resonant tunneling barriers, resonant cavity structure and asymmetric multi barrier resonant tunneling have been proposed to improve the performance of a QRIP (Karimi et al 2013;Huang et al 2009;Karimi et al 2014).…”

Section: Introductionmentioning

confidence: 98%

Tunable far infrared detection using quantum rings-in-well intersubband photodetectors

2015

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A novel design of quantum ring intersubband photodetectors is proposed based on quantum rings-in-well structure and its performance characteristics studied by simulation. The photon absorption occurs for intersubband transitions between quantum ring sub-bands and well states. The detector is expected to be better controlled over operating wavelength and normal incidence sensitivity in far infrared. Since the quantum well states change by electric field, the peak responsivity wavelength is voltage tunable. Our results show that increasing the bias voltage to 5 V leads to a red-shift about 4 lm in peak wavelength. For proposed detector a quantum-mechanical approach is introduced for calculation of photoconductive gain. Peak responsivity about 0.6 A/W at k = 20 lm is achieved at T = 77 K using this detector.

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“…[7,8], where the electronic states of the QRs have been calculated and measured by the capacitance-voltage technique. Multiple layers of InAs/GaAs QRs have been used as the active region in high-performance photoconductive detectors in the range between 1-3 terahertz [9].…”

Section: Introductionmentioning

confidence: 99%

“…Some of the most recent objects are III-V semiconducting torus shaped quantum rings (QRs) [1,2]. Like self-assembled quantum dots (QDs), QRs possess atom-like properties, making them a fair venue for potential device applications in optics, optoelectronics, and quantum computing [3][4][5][6][7][8][9]. At the same time QRs are a non-simply connected quantum systems -the hole in the middle provides the capability of trapping single magnetic flux and offers the exciting opportunity to observe electronic wave function phases in magneto-optical experiments.…”

Section: Introductionmentioning

confidence: 99%

Influence of lateral electric field on intraband optical absorption in concentric double quantum rings

Baghramyan

Barseghyan

Laroze

et al. 2016

Physica E: Low-dimensional Systems and Nanostructures

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. (2016) Influence of lateral electric field on intraband optical absorption in concentric double quantum rings. Physica E: Low-Dimensional Systems and Nanostructures, 77, pp. 81-89.There may be differences between this version and the published version. You are advised to consult the publisher's version if you wish to cite from it.http://eprints.gla.ac.uk/113327/ AbstractThe influence of lateral electric field on one-electron states and intraband absorption in two-dimensional concentric double quantum rings is investigated. The confining potential of the rings is modeled as a double harmonic central potential. Using the exact diagonalization technique, we calculate the dependence of the electron energy spectrum as a function of the electric field strength as well as the inner ring radius. Also, different values of confinement strength are considered. Selection rule is obtained for intraband transitions, caused by the direction of incident light polarization. The intraband absorption coefficient is calculated for different values of electric field strength, inner ring radius, confinement strength and incident light polarization direction. The combined influence of electric field strength and change of confining strength show that while the increment of the first one leads only to blueshift of absorption spectrum, the augment of the second one makes the redshift. In addition, both blueshift and redshift of the spectrum have been obtained with the enlargement of inner ring radius. Finally, we show that the absorption spectrum undergoes redshift by changing the polarization of incident light from x to y axis.

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High-performance quantum ring detector for the 1–3 terahertz range

Cited by 48 publications

References 15 publications

Terahertz detectors and focal plane arrays

Terahertz detectors and focal plane arrays

Tunable far infrared detection using quantum rings-in-well intersubband photodetectors

Influence of lateral electric field on intraband optical absorption in concentric double quantum rings

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