High performance quantum dot lasers on GaAs substrates operating in 1.5 [micro sign]m range

Ledentsov, N. N.; Kovsh, A. R.; Zhukov, A. E.; Maleev, N. A.; Mikhrin, S. S.; Васильев, А. П.; Semenova, Elizaveta; Maximov, M. V.; Shernyakov, Yu. M.; Kryzhanovskaya, N. V.; Ustinov, V. M.; Bimberg, D.

doi:10.1049/el:20030753

Cited by 168 publications

(83 citation statements)

References 5 publications

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“…[1][2][3][4] The optical properties of QDs are of critical importance because they can be used to control the polarization sensitivity of devices. Several approaches have been explored in order to achieve polarization-insensitive emission from QDs, including covering the QDs with a strain reducing layer, 5 growing multiple electronically coupled layers of QDs [6][7][8] and columnar QDs, 9,10 and forming a type-II band alignment using GaAsSb barriers.…”

Section: Introductionmentioning

confidence: 99%

Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm)

Usman

Heck

Clarke

et al. 2011

Journal of Applied Physics

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The design of some optical devices such as semiconductor optical amplifiers for telecommunication applications requires polarization-insensitive optical emission at the long wavelengths (1300-1550 nm). Self-assembled InAs/GaAs quantum dots (QDs) typically exhibit ground state optical emission at wavelengths shorter than 1300 nm with highly polarization-sensitive characteristics, although this can be modified by using low growth rates, the incorporation of strainreducing capping layers or growth of closely-stacked QD layers. Exploiting the strain interactions between closely stacked QD layers also allows greater freedom in the choice of growth conditions for the upper layers, so that both a significant extension in their emission wavelength and an improved polarization response can be achieved due to modification of the QD size, strain and composition. In this paper we investigate the polarization behavior of single and stacked QD layers using room temperature sub-lasing-threshold electroluminescence and photovoltage measurements as well as atomistic modeling with the NEMO 3-D simulator. A reduction is observed in the ratio of the transverse electric (TE) to transverse magnetic (TM) optical mode response for a GaAs-capped QD stack compared to a single QD layer, but when the second layer of the two-layer stack is InGaAs-capped an increase in the TE/TM ratio is observed, in contrast to recent reports for single QD layers.

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Section: Introductionmentioning

confidence: 99%

Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm)

Usman

Heck

Clarke

et al. 2011

Journal of Applied Physics

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“…However, optoelectronics and the implementation of practical quantum computation networks require mostly the use of QDs emitting in the telecommunications C-band (1.53 -1.56 µm). Emission at wavelengths around 1.55 µm has already been achieved from QDs grown on a GaAs substrate by means of different techniques, for instance by unusually low temperature growth [4] or epitaxial growth on metamorphic buffer layers [5,6]. Yet, one of the most attractive material combinations for fabricating QDs emitting in the C-band is InAs on InP substrate.…”

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confidence: 99%

Time-resolved characterization of InAsP∕InP quantum dots emitting in the C-band telecommunication window

Hostein

Michon

Beaudoin

et al. 2008

Applied Physics Letters

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The dynamic response of InAsP quantum dots grown on InP(001) substrates by low-pressure Metalorganic Vapor Phase Epitaxy emitting around 1.55 µm, is investigated by means of timeresolved microphotoluminescence as a function of temperature. Exciton lifetime steadily increases from 1 ns at low temperature to reach 4 ns at 300K while the integrated photoluminescence intensity decreases only by a factor of 2/3. These characteristics give evidence that such InAsP/InP quantum dots provide a strong carrier confinement even at room temperature and that their dynamic response is not affected by thermally activated non-radiative recombination up to room temperature.In recent years, self-assembled semiconductor quantum dots (QDs) have been considered for utilization in quantum information processing (such as quantum communication [1,2,3]), in addition to their conventional applications in optoelectronics, for example. However, optoelectronics and the implementation of practical quantum computation networks require mostly the use of QDs emitting in the telecommunications C-band (1.53 -1.56 µm). Emission at wavelengths around 1.55 µm has already been achieved from QDs grown on a GaAs substrate by means of different techniques, for instance by unusually low temperature growth [4] or epitaxial growth on metamorphic buffer layers [5,6]. Yet, one of the most attractive material combinations for fabricating QDs emitting in the C-band is InAs on InP substrate. Most of the studies, involving high-vacuum growth techniques such as molecular beam epitaxy, [7,8] of InAs QDs on (001)-oriented InP substrates, demonstrated the formation of strongly elongated nanostructures (namely, "quantum dashes" or "quantum sticks") rather than three-dimensional QDs. To circumvent this difficulty, a few groups have used (113)B-oriented InP substrates [9], which are however not compatible with the standard processes used in the fabrication of optoelectronic devices. Metalorganic vapor phase epitaxy (MOVPE) has also been used for the growth of InAs/InP(001) QDs. Various studies have shown that MOVPE allows one to obtain QDs rather than quantum dashes [10,11]. Recently, microphotoluminescence signals around 1.5 µm evidenced sharp spectral features corresponding to radiative transitions from trapped single electron-hole pairs in such InAs/InP QDs grown by MOVPE [13,14,15]. Conversely, not much work has been done on the dynamic response of such MOVPE-grown dots and its dependence as a function of the temperature [19]. Yet, measurements of this dynamic response and the impact of thermally activated non-radiative mechanisms are quite important to assess the potential of such QDs devices for example for high-speed direct modulation or efficient generation of quantum states of light at high temperature (more than 77 K). This study forms the basis of this letter. The dependence of the large measured radiative lifetime and the small decrease of the integrated intensity as a function of temperature demonstrate the high structural quality of these QDs, which offer ...

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“…Возможность успешной реализа-ции приборов с использованием такого подхода была продемонстрирована рядом научных групп. Например, для выращивания квантовых точек с длиной волны излучения вблизи 1500 нм на подложках GaAs с ме-таморфным переходным слоeм InGaAlAs [31,32], что в дальнейшем позволило реализовать эффективные ла-зеры с торцевым выводом излучения [33][34][35], для со-здания метаморфного туннельного перехода [36][37][38][39], метаморфных РБО на основе пары InGaAs/InAlAs [40], GaAs/AlAs [11,31,32,[41][42][43][44], GaAs/AlGaAs-слоев [45][46][47], а также GaAs/InGaAs-буфера [48,49].…”

Section: Introductionunclassified

Оптические Свойства Метаморфной Гибридной Гетероструктуры Вертикально Излучающего Лазера Спектрального Диапазона 1300 Нм

Бабичев¹,

Крыжановская²,

Моисеев³

et al. 2017

Физика И Техника Полупроводников

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Продемонстрирована возможность формирования гибридных метаморфных гетероструктур вертикально излучающих лазеров (ВИЛ) спектрального диапазона 1300 нм. Метаморфная полупроводниковая часть гетероструктуры с распределенным брэгговским отражателем на основе пары GaAs/AlGaAs и активной областью на основе квантовых ям InAlGaAs/InGaAs выращена методом молекулярно-пучковой эпитаксии на подложке GaAs(100). Верхнее диэлектрическое зеркало с распределенным брэгговским отражателем сформировано на основе пары SiO2/Ta2O5 методом магнетронного распыления. Проведено изучение спектров микрофотолюминесценции гетероструктур вертикально излучающих лазеров при комнатной температуре в диапазоне мощностей 0-70 мВт (длина волны оптической накачки составила 532 нм, диаметр сфокусированного пучка ~ 1 мкм). Наличие сверхлинейного хода зависимости интенсивности фотолюминесценции от мощности накачки наряду с заужением полуширины пиков фотолюминесценции и изменением модового состава могут быть обусловлены лазерной генерацией гетероструктуры вертикально излучающих лазеров. Полученные результаты свидетельствуют о возможности использования технологии метаморфного роста гетероструктур на подложках GaAs для создания вертикально излучающих лазеров спектрального диапазона 1300 нм. DOI: 10.21883/FTP.2017.09.44879.8557

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High performance quantum dot lasers on GaAs substrates operating in 1.5 [micro sign]m range

Cited by 168 publications

References 5 publications

Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm)

Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm)

Time-resolved characterization of InAsP∕InP quantum dots emitting in the C-band telecommunication window

Оптические Свойства Метаморфной Гибридной Гетероструктуры Вертикально Излучающего Лазера Спектрального Диапазона 1300 Нм

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