High-performance poly-Ge short-channel metal–oxide–semiconductor field-effect transistors formed on SiO<sub>2</sub>layer by flash lamp annealing

Usuda, Koji; Kamata, Yasushi; Kamimuta, Yuuichi; Mori, Takahiro; Koike, Michio; Tezuka, T.

doi:10.7567/apex.7.056501

Cited by 71 publications

(69 citation statements)

References 14 publications

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“…The details of this work will be published in the near future. Furthermore, recent excellent studies of high-performance poly-Ge p- and n-FETs, and poly-Ge CMOS operation, have been conducted by Usuda et al [73] and Kamata et al [74], respectively. These studies are quite informative for realising sequential integration of poly-Ge FETs in a 3D-IC.…”

Section: Crystal Growth and Crystalline Propertiesmentioning

confidence: 99%

Growth and applications of GeSn-related group-IV semiconductor materials

Zaima

Nakatsuka

Taoka

et al. 2015

Science and Technology of Advanced Materials

167

109

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We review the technology of Ge1−xSnx-related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge1−xSnx-related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising various applications not only in electronics, but also in optoelectronics. We introduce our recent achievements in the crystal growth of Ge1−xSnx-related material thin films and the studies of the electronic properties of thin films, metals/Ge1−xSnx, and insulators/Ge1−xSnx interfaces. We also review recent studies related to the crystal growth, energy band engineering, and device applications of Ge1−xSnx-related materials, as well as the reported performances of electronic devices using Ge1−xSnx related materials.

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Section: Crystal Growth and Crystalline Propertiesmentioning

confidence: 99%

Growth and applications of GeSn-related group-IV semiconductor materials

Zaima

Nakatsuka

Taoka

et al. 2015

Science and Technology of Advanced Materials

167

109

View full text Add to dashboard Cite

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“…To avoid thermal damage to the substrates and to lower the process costs, the low-temperature formation (<600 °C) of GOI is necessary. Polycrystalline Ge (poly-Ge) thin films have been directly formed on glass or plastic substrates at low temperatures using solid-phase crystallization (SPC) 17 – 21 , laser annealing 22 – 24 , chemical vapor deposition (CVD) 25 , 26 , flash lamp annealing (FLA) 27 , and metal-induced crystallization (MIC) 28 – 32 . The use of these techniques has allowed researchers to fabricate Ge thin-film transistors (TFTs) via all-low-temperature processes 20 , 21 , 27 , 32 .…”

Section: Introductionmentioning

confidence: 99%

“…In 2009, we demonstrated a hole mobility of 140 cm 2 /Vs for poly-Ge on glass formed by two-step SPC of amorphous (a−) Ge at 425 °C followed by 500 °C 17 . In the last couple of years, the highest hole mobility has been updated frequently: FLA has achieved 200 cm 2 /Vs 27 , followed by Au-induced crystallization achieving 160–210 cm 2 /Vs 31 , 32 . On the other hand, incorporating Sn in Ge has been found to be effective for enhancing the hole mobility 33 – 35 .…”

Section: Introductionmentioning

confidence: 99%

High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization

Toko

Yoshimine

Moto

et al. 2017

Sci Rep

116

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High-carrier mobility semiconductors on insulators are essential for fabricating advanced thin-film transistors, allowing for three-dimensional integrated circuits or high-performance mobile terminals. We investigate the low-temperature (375–450 °C) solid-phase crystallization (SPC) of Ge on a glass substrate, focusing on the precursor conditions. The substrate temperature during the precursor deposition, T d, ranged from 50 to 200 °C. According to the atomic density of the precursor and the T d dependent SPC properties, the precursor conditions were determined by three regimes: the low-density regime (T d < 100 °C), high-density regime (100 ≤ T d ≤ 125 °C), and nucleation regime (T d > 125 °C). The use of the precursor in the narrow high-density regime enabled us to form SPC-Ge with a hole mobility of 340 cm2/Vs, the highest value among semiconductor thin films grown on insulators at low temperature (<900 °C). The origins of the high hole mobility were determined to be both a large grain size (5 µm) and a low energy barrier height (6.4 meV) for the grain boundary. The findings from and knowledge gained in this study, that is, the influence of the precursor conditions on subsequent crystal growth, will be universal and applicable to various materials.

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“…5,6 One of the prevailing routes for producing nanocrystals is to utilize the crystallization of amorphous films. Because grain size and crystallinity could be the important factors for achieving the desirable performances, the crystallization behavior of amorphous Si (a-Si) and Ge (a-Ge) needs to be understood.…”

Section: Introductionmentioning

confidence: 99%

Structural transition in sputter-deposited amorphous germanium films by aging at ambient temperature

Okugawa

Nakamura

Ishimaru

et al. 2016

Journal of Applied Physics

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The structure of amorphous Ge (a-Ge) films prepared by sputter-deposition and the effects of aging at ambient temperature and pressure were studied by pair-distribution-function (PDF) analysis from electron scattering and molecular dynamics simulations. The PDFs of the as-deposited and aged samples for 3–13 months showed that the major peaks for Ge-Ge bonds decrease in intensity and broaden with aging for up to 7 months. In the PDFs of a-Ge of molecular dynamics simulation obtained by quenching liquid at different rates, the major peak intensities of a slowly cooled model are higher than those of a rapidly cooled model. Analyses on short- and medium-range configurations show that the slowly cooled model includes a certain amount of medium-range ordered (MRO) clusters, while the rapidly cooled model includes liquid-like configurations rather than MRO clusters. The similarity between experimental and computational PDFs implies that as-deposited films are similar in structure to the slowly cooled model, whereas the fully aged films are similar to the rapidly cooled model. It is assumed that as they undergo room-temperature aging, the MRO clusters disintegrate and transform into liquid-like regions in the same matrix. This transition in local configurations is discussed in terms of instability and the non-equilibrium of nanoclusters produced by a vapor-deposition process.

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High-performance poly-Ge short-channel metal–oxide–semiconductor field-effect transistors formed on SiO₂layer by flash lamp annealing

Cited by 71 publications

References 14 publications

Growth and applications of GeSn-related group-IV semiconductor materials

Growth and applications of GeSn-related group-IV semiconductor materials

High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization

Structural transition in sputter-deposited amorphous germanium films by aging at ambient temperature

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High-performance poly-Ge short-channel metal–oxide–semiconductor field-effect transistors formed on SiO2layer by flash lamp annealing

Cited by 71 publications

References 14 publications

Growth and applications of GeSn-related group-IV semiconductor materials

Growth and applications of GeSn-related group-IV semiconductor materials

High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization

Structural transition in sputter-deposited amorphous germanium films by aging at ambient temperature

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Product

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High-performance poly-Ge short-channel metal–oxide–semiconductor field-effect transistors formed on SiO₂layer by flash lamp annealing