High performance polarization-independent Quantum Dot Semiconductor Optical Amplifier with 22 dB fiber to fiber gain using Mode Propagation Tuning without additional polarization controller

Farmani, Ali; Farhang, Mahmoud; Sheikhi, Mohammad Hossein

doi:10.1016/j.optlastec.2017.02.007

Cited by 28 publications

(4 citation statements)

References 33 publications

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“…As shown in Figure 6b, the QDs have a high aspect ratio and a strain-controlled side barrier, achieving a gain factor of 8 dB, a polarization-dependent gain of 0.4 dB, and a saturation output power of 18.5 dBm. In 2017, Farmani, A's group reported a polarization-dependent gain of less than 0.1 dB in the 1550 nm band by appropriately thickening the SOA active layer of the QDs [84]. The polarization insensitivity, saturation output power, and gain are all realized by the excellent saturation output power performance of the QDs.…”

Section: Polarization Insensitivitymentioning

confidence: 99%

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

Tang,

Yang,

Qin

et al. 2023

Sensors

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The 1550 nm band semiconductor optical amplifier (SOA) has great potential for applications such as optical communication. Its wide-gain bandwidth is helpful in expanding the bandwidth resources of optical communication, thereby increasing total capacity transmitted over the fiber. Its relatively low cost and ease of integration also make it a high-performance amplifier of choice for LiDAR applications. In recent years, with the rapid development of quantum-well (QW) material systems, SOAs have gradually overcome the shortcomings of polarization sensitivity and high noise. The research on quantum-dot (QD) materials has further improved the noise characteristics and transmission loss of SOAs. The design of special waveguide structures—such as plate-coupled optical waveguide amplifiers and tapered amplifiers—has also increased the saturation output power of SOAs. The maximum gain of the SOA has been reported to be more than 21 dB. The maximum saturation output power has been reported to be more than 34.7 dBm. The maximum 3 dB gain bandwidth has been reported to be more than 120 nm, the lowest noise figure has been reported to be less than 4 dB, and the lowest polarization-dependent gain has been reported to be 0.1 dB. This study focuses on the improvement and enhancement of the main performance parameters of high-power SOAs in the 1550 nm band and introduces the performance parameters, the research progress of high-power SOAs in the 1550 nm band, and the development and application status of SOAs. Finally, the development trends and prospects of high-power SOAs in the 1550 nm band are summarized.

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Section: Polarization Insensitivitymentioning

confidence: 99%

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

Tang,

Yang,

Qin

et al. 2023

Sensors

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“…Additionally, the Talbot effect can be used in the characterization and measurement of plasmonic devices. The self-imaging property of the Talbot effect provides a method to analyze the periodicity and quality of plasmonic structures 32 – 45 . This is essential for assessing the performance and optimization of plasmonic devices in various applications 46 – 57 .…”

Section: Plasmonics Biosensors Based On the Talbot Effectmentioning

confidence: 99%

Observation of Plasmonics Talbot effect in graphene nanostructures

Farmani,

Omidniaee

2024

Sci Rep

Self Cite

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We report on the theoretical models of the plasmoincs Talbot effect in graphene nanostructure. The Talbot effect for the plasmonics applications in the IR range is theoretically studied and the respective Talbot effect for the novel advanced plasmonics structures are numerically investigated for the first time. It is shown that the metamaterial structures with periodic grating configuration represents a complex three-dimensional lattice of beamlet-like graphene plasmonics devices. The calculated results agree well with the experimental ones. The results obtained can be used to create and optimize the structures considering diffraction limit for a wide range of application areas. Effective focusing of plasmonic waves with exact focal spots and a subwavelength full width at half maximum can be obtained by using periodic graphene grating.

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“…Furthermore, SOAs can perform optical packet switching, allowing the construction of SOA-based OPS (M × N switches), which can establish connections between ports in the order of few nanoseconds [28]. These devices take advantage of the polarization insensitivity [29] and ultrafast transitions from off to on operational states in SOA-based optical space switches [30], which is possible through the dynamic behavior of electrical and optical carriers in the SOA active region [31]]-[ [33]. In addition, SOA can simultaneously amplify the switched carrier, compensating for switch insertion loss and improving the optical link signal-to-noise ratio [34].…”

Section: Computational Model and Parameter Extraction Of High Speed Smentioning

confidence: 99%

Computational Model and Parameter Extraction of High Speed Semiconductor Optical Amplifier Space Switches

Sutili

Rocha

Barrientos

et al. 2018

J. Microw. Optoelectron. Electromagn. Appl.

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A characterization technique, including a mathematical model involving extensive computational resources, is introduced to study the behavior of an electro-optical space switch based on semiconductor optical amplifier (SOA). The model encompasses the precise emulation of device nonlinearities and its transient performance, allowing the characterization of its transient response. The calibration process includes the evaluation of parasites from the SOA connection, mounting and encapsulation, and parameter extraction of the active cavity. The numerical results are compared to experimental data for various operational conditions, with close similarities. The characterization technique can be adapted for other electro-optical devices, such as directedmodulated lasers, amplitude modulators and electro-optical switches.

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High performance polarization-independent Quantum Dot Semiconductor Optical Amplifier with 22 dB fiber to fiber gain using Mode Propagation Tuning without additional polarization controller

Cited by 28 publications

References 33 publications

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

A Review of High-Power Semiconductor Optical Amplifiers in the 1550 nm Band

Observation of Plasmonics Talbot effect in graphene nanostructures

Computational Model and Parameter Extraction of High Speed Semiconductor Optical Amplifier Space Switches

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