Computational Model and Parameter Extraction of High Speed Semiconductor Optical Amplifier Space Switches

Abstract

A characterization technique, including a mathematical model involving extensive computational resources, is introduced to study the behavior of an electro-optical space switch based on semiconductor optical amplifier (SOA). The model encompasses the precise emulation of device nonlinearities and its transient performance, allowing the characterization of its transient response. The calibration process includes the evaluation of parasites from the SOA connection, mounting and encapsulation, and parameter extraction of the active cavity. The numerical results are compared to experimental data for various operational conditions, with close similarities. The characterization technique can be adapted for other electro-optical devices, such as directedmodulated lasers, amplitude modulators and electro-optical switches.

Performance analysis of a directly modulated semiconductor optical amplifiers using non‐return‐to‐zero, duobinary and quaternary pulse amplitude modulation signalling

“…The latter is simulated via scattering matrices acting upon a forward and backward propagated (complex) optical field that travels along the transmission lines that interconnect the sections in which the SOA is divided. We have assumed a current injection efficiency of 100% that is homogeneously distributed along the SOA, and we have disregarded some electro-optical parameters in the SOA model such as capacitances, inductances, and resistances inherent to the SOA assembly [23]. These assumptions might lead to small The carrier injection density represents a fundamental (for our analysis) term in the carrier density rate equation, which is also mediated by the recombination rate and stimulated emission rate.…”

High-Speed Pulse Sequences through Semiconductor Optical Nonlinear Amplification and Buried Fiber Propagation

“…However, useful Semiconductor Optical Amplifiers (SOAs) were achieved with multiple quantum-well (MQW) active regions and one-pass traveling wave SOAs were obtained using anti-reflections facets with small mirror reflectivity around 10 -4 [3], [4]. Theoretical analysis of MQW-SOAs have been performed including gain compression in polarization insensitive devices [5], including injected current dynamics effects [6], [7]. In particular, when very short pulses are amplified, non-linear SOA effects of self-phase modulation (SPM) cause pulse spectral broadening and distortion [8]- [10].…”